Untitled
Abstract: No abstract text available
Text: SK 35 NT power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik SEMITOP 1 Thyristor Module SK 35 NT Preliminary Data
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Untitled
Abstract: No abstract text available
Text: SKM 150GB123D R3 S NT UI9 * /2<< .+824>'<2 < 23'B'25 Absolute Maximum Ratings Symbol Conditions IGBT ?IV& RW S NT UI EI RW S MTO UI MNOO ? MTO J R30<2 S YO UI MMO J NOO J ¥ NO ? MO `< R30<2 S NT UI MTO J R30<2 S YO UI MOO J NOO J RW S MTO UI MMOO J R30<2 S NT UI
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150GB123D
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Untitled
Abstract: No abstract text available
Text: C-15-DFB2.5-E-AD-NT 470 1550 nm 2.5Gbps DFB Laser Diode C-15-DFB2.5-E-BD-NT Features ! ! ! ! ! ! ! ! Uncooled laser diode with MQW structure 5mW CW operation at 0~70℃ High temperature Operation without active cooling Hermetically sealed active component
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C-15-DFB2
TA-NWT-000983
D-SP-0005
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C-13-DFB2
Abstract: No abstract text available
Text: C-13-DFB2.5-E-AD-NT 470 1310 nm 2.5Gbps DFB Laser Diode C-13-DFB2.5-E-BD-NT Features ! ! ! ! ! ! ! ! Uncooled laser diode with MQW structure 5mW CW operation at 0~70℃ High temperature operation without active cooling Hermetically sealed active component
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C-13-DFB2
TA-NWT-000983
D-SP-0004
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18 wavelength CWDM uncooled DFB LD
Abstract: D-SP-0041-V2 Laser Diode "single mode" CW 1300nm
Text: C-1XXX-DFB2.5-E-AD-NT 14701470nm47140 1XXXnm C-1XXX-DFB2.5-E-BD-NT 1300nm series CWDM 2.5Gbps DFB Laser Diodes Absolute Maximum Ratings Tc=25℃ Features ! Uncooled laser diode with MQW Parameter Symbol Value Unit Po 10(CW) mW structure Optical Output Power
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14701470nm47140
1300nm
D-SP-0041-V2
18 wavelength CWDM uncooled DFB LD
D-SP-0041-V2
Laser Diode "single mode" CW 1300nm
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mqw-dfb
Abstract: C-151-DFB-E-AB-NT
Text: 1510nm C-151-DFB-E-A-NT C-151-DFB-E-B-NT 1510nm MQW-DFB Laser Diodes Absolute Maximum Ratings Tc=25℃ Parameter Symbol Value Unit Optical Output Power Po LD Reverse Voltage VRLD 2 V PD Reverse Voltage VRPD 10 V PD Forward Current IFPD 2 mA Operating Temperature
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1510nm
C-151-DFB-E-A-NT
C-151-DFB-E-B-NT
1510nm
51-DFB-E-A-NT
C-151-DFB-E-AB-NT
C-151-DFB-E-BB-NT
mqw-dfb
C-151-DFB-E-AB-NT
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APT0406
Abstract: APT0501 APT0502 APTGF100DA120TG ntc-1,0
Text: APTGF100DA120TG Boost chopper NPT IGBT Power Module OUT Q2 G2 E2 NTC1 0/VBU S G2 E2 VBUS VBUS SENSE 0/VBUS OUT OUT E2 NT C2 G2 NT C1 Features • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes
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APTGF100DA120TG
APT0406
APT0501
APT0502
APTGF100DA120TG
ntc-1,0
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Untitled
Abstract: No abstract text available
Text: PLEASE READ THIS MANUAL CAREFULLY BEFORE INSTALLING OR USING THE MODULES INSTALLATION MANUAL Thin-Film Photovoltaic Module Co nf id en t ia l NT-Series AX NexPower Technology Corp. NT-Series (AX) Ver. EU-E Table of Contents 1. INTRODUCTION . 2
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Untitled
Abstract: No abstract text available
Text: FSGL035R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs [ /Title FSGL 035R /Subjec t (Radiat ion Harden ed, SEGR Resista nt N-Cha nnel Power MOSF ETs) /Autho r () /Keyw ords (Radiat ion Harden ed, SEGR Resista nt N-Cha nnel Power MOSF
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FSGL035R
to205af)
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ALCATEL 2840
Abstract: 2840 alcatel MTC-20277 alcatel mtc MTC-20277PC-C PC44 transformer ALCATEL2840 alcatel sic MTC-20270 MTC-20277PQ-C
Text: MTC-20277 INTT Single Chip ISDN NT, 4B3T Data Sheet and User Manual Rev. 1.2 - October 1998 Key features: Applications: General Description ▼ Fully integrated ISDN NT device - ‘U’ and ‘S’ interfaces in one package ▼ Pin compatible with MTC20276 INTQ 2B1Q)
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MTC-20277
MTC20276
300mW
02/98-DS241d
ALCATEL 2840
2840 alcatel
alcatel mtc
MTC-20277PC-C
PC44 transformer
ALCATEL2840
alcatel sic
MTC-20270
MTC-20277PQ-C
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ALCATEL 2840
Abstract: alcatel sic trigger transformer 601 Opto isolator MTC-20276PC-C MTC-2028 MTC-20277
Text: MTC-20276 Single Chip ISDN NT 2B1Q INTQ Data Sheet Rev. 2.3 - October 1999 Key Features Applications General Description ▼ Fully integrated basic rate U to S/T ISDN NT device ▼ Pin compatible with MTC20277 INTT (4B3T) ▼ Full compliance with the applicable ETSI and
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MTC-20276
MTC20277
355mW
07/99-DS252e
ALCATEL 2840
alcatel sic
trigger transformer
601 Opto isolator
MTC-20276PC-C
MTC-2028
MTC-20277
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ALCATEL 2840
Abstract: 2840 alcatel alcatel sic
Text: MTC-20276 Single Chip ISDN NT 2B1Q INTQ Data Sheet Rev. 2.2 - October 1998 Key Features Applications General Description ▼ Fully integrated basic rate U to S/T ISDN NT device ▼ Pin compatible with MTC20277 INTT (4B3T) ▼ Full compliance with the applicable ETSI and
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MTC-20276
MTC20277
320mW
10/98-DS252c
ALCATEL 2840
2840 alcatel
alcatel sic
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Untitled
Abstract: No abstract text available
Text: APTGT200DA60T VCES = 600V IC = 200A @ Tc = 80°C Boost chopper Trench + Field Stop IGBT Power Module NT C2 VBUS VB US SENS E Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 E2 NT C1 0/VBU S G2 OUT
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APTGT200DA60T
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Abstract: No abstract text available
Text: APTGT100DA120TG Boost chopper Fast Trench + Field Stop IGBT Power Module NT C2 VBUS VB US SENS E VCES = 1200V IC = 100A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 OUT Q2 G2 E2 NT C1
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APTGT100DA120TG
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APT0406
Abstract: APT0501 APT0502 APTGT150DA60TG
Text: APTGT150DA60TG VCES = 600V IC = 150A @ Tc = 80°C Boost chopper Trench + Field Stop IGBT Power Module VBUS VB US SENS E NT C2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 E2 NT C1 0/VBU S G2 E2
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APTGT150DA60TG
APT0406
APT0501
APT0502
APTGT150DA60TG
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Untitled
Abstract: No abstract text available
Text: APTGT100DA60T VCES = 600V IC = 100A @ Tc = 80°C Boost chopper Trench + Field Stop IGBT Power Module NT C2 VBUS VB US SENS E Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 E2 NT C1 0/VBU S G2 OUT
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APTGT100DA60T
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Untitled
Abstract: No abstract text available
Text: APTGT100DA120T Boost chopper Fast Trench + Field Stop IGBT Power Module NT C2 VBUS VB US SENS E VCES = 1200V IC = 100A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 E2 NT C1 0/VBU S
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APTGT100DA120T
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transistors equivalent
Abstract: No abstract text available
Text: FSGL134R Data Sheet [ /Title FSGL 134R /Subjec t (Radiat ion Harden ed, SEGR Resista nt N-Cha nnel Power MOSF ETs) /Autho r () /Keyw ords (Radiat ion Harden ed, SEGR Resista nt N-Cha nnel Power MOSF ETs) /Creato r () /DOCI NFO pdfmar k Radiation Hardened, SEGR Resistant
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FSGL134R
transistors equivalent
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Untitled
Abstract: No abstract text available
Text: APTM20DUM08T VDSS = 200V RDSon = 8mW max @ Tj = 25°C ID = 208A @ Tc = 25°C Dual common source MOSFET Power Module D1 Application • AC Switches · Switched Mode Power Supplies · Uninterruptible Power Supplies D2 Q1 Q2 G1 G2 S1 S2 S NT C1 NT C2 G2 S2 D1
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APTM20DUM08T
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2100A
Abstract: No abstract text available
Text: APTGT150DA60T VCES = 600V IC = 150A @ Tc = 80°C Boost chopper Trench + Field Stop IGBT Power Module VBUS VB US SENS E NT C2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 E2 NT C1 0/VBU S G2 OUT
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APTGT150DA60T
2100A
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Untitled
Abstract: No abstract text available
Text: APTGF180DU60TG Dual common source NPT IGBT Power Module VCES = 600V IC = 180A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 C1 Q1 Q2 G1 G2 E1 E2 E NT C1 NT C2 G2 C2 E2 C1 C2 E E1 E2 NTC2 G1
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APTGF180DU60TG
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APT0406
Abstract: APT0501 APT0502 APTGF180DU60TG
Text: APTGF180DU60TG Dual common source NPT IGBT Power Module VCES = 600V IC = 180A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 Q2 G1 G2 E1 E2 E NT C2 NT C1 G2 C2 E2 C1 C2 E E1 E2 NTC2 G1 G2 NTC1
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APTGF180DU60TG
APT0406
APT0501
APT0502
APTGF180DU60TG
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948D
Abstract: DVD ID 802 Matsushita Floppy SFF-8020i E820 ACPI BIOS Matsua Floppy ACPI Implementers Guide Joe Kane Productions
Text: Hardware Design Guide Version 2.0 for Microsoft Windows NT Server A Reference for Designing Servers and Peripherals for the Microsoft Windows NT® Server Operating System Intel Corporation and Microsoft Corporation Publication Date: July 22, 1998 ii The information contained in this document represents the current view of Intel
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Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 31DQ09 31DQ10 3.3A/90~100V FEATURES ° Low Forward Voltage Drop 5.8 .23 DIA • Low Power Loss, High Efficiency 1.5(.059)nT. ° High Surge Capability 1.3(.05l) »30 Volts through 100 Volts Types Available 21(.83) MIN 10(.39) MAX 1.5(.059)nT,
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31DQ09
31DQ10
31DQ09
20x20xlt
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