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    NSFY30509 Search Results

    NSFY30509 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NSFY30509 New England Semiconductor N-Channel Power Mosfets Original PDF
    NSFY30509 New England Semiconductor POWER MOSFET N CHANNEL Scan PDF
    NSFY30509 New England Semiconductor POWER MOSFETS N CHANNEL TO-257 Scan PDF
    NSFY30509 New England Semiconductor TRANS MOSFET N-CH 500V 7A 3TO-257 Scan PDF

    NSFY30509 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CP666

    Abstract: CP640 TO-213AA CP664
    Text: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100


    Original     		PDF O-213AA/66 CP666 CP640 TO-213AA CP664

    R950

    Abstract: NSFY30509 1000 volt ampere current MOSFET MOSFET 2 ampere 300 v
    Text: NSFY30509 POWER MOSFET N CHANNEL ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted VALUE SYMBOL PARAMETERS / TEST CONDITIONS 500 Drain-Source Voltage V ds ±30 Gate-Source Voltage V qs 7.0 Continuous Drain Current Id 28 Pulsed Drain Current (1)


    OCR Scan     		PDF NSFY30509 O-257 M46-1158 R950 NSFY30509 1000 volt ampere current MOSFET MOSFET 2 ampere 300 v

    NSFY30509

    Abstract: NSFY30613 NSFY30616 NSFY30724 NSFY30728 NSFY30824 NSFY30828 NSFY30940 NSFY30942 NSFY31040
    Text: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 ^ D S o n PACKAGE TO-257 Also available in Z Pack • • • DEVICE TYPE BVdss VOLTS Id @0.5 ID Qg AMPS OHMS nc Ciss Pf Pd WATTS NSFY31042 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100


    OCR Scan     		PDF O-257 O-257 NSFY31042 NSFY31040 NSFY30942 NSFY30940 NSFY30824 NSFY30828 NSFY30724 NSFY30728 NSFY30509 NSFY30613 NSFY30616

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 PACKAGE DEVICE TYPE ^DS<on BV dss VOLTS Id AMPS @0.5 ID OHMS Qg nc Qss pf Pd WATTS NSFY31042 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100 NSFY30942 900 3.0 4.2 55 950 100 NSFY30940 900


    OCR Scan     		PDF O-257 NSFY31042 NSFY31040 NSFY30942 NSFY30940 NSFY30824 NSFY30828 NSFY30724 NSFY30728 NSFY30613

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR PO W E R M OSFETS N CHANNEL TO-25" R d S oii PACKAGE TO-257 Also available in Z Pack • • • DEVICE TYPE Qg nc Q ss Pd AMPS @0.5 ID OHM S Pf WATTS 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100 NSFY30942 900 3.0 4.2


    OCR Scan     		PDF NSFY31042 NSFY31040 NSFY30942 NSFY30940 O-257 NSFY30824 NSFY30828 NSFY30724 NSFY30728 NSFY30613

    NSFY30509

    Abstract: NSFY30613 NSFY30616 NSFY30724 NSFY30728 NSFY30824 NSFY30828 NSFY30940 NSFY30942 NSFY31040
    Text: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 PACKAGE TO-257 Also available in Z Pack • • • BV dss VOLTS Id AMPS ^DS{on @0.5 ID OHMS Qg NSFY31042 1000 3.0 4.2 NSFY31040 1000 3.3 NSFY30942 900 NSFY30940 DEVICE TYPE Qss Pf Pd WATTS 55 950


    OCR Scan     		PDF O-257 O-257 NSFY31042 NSFY31040 NSFY30942 NSFY30940 NSFY30824 NSFY30828 NSFY30724 NSFY30728 NSFY30509 NSFY30613 NSFY30616

    Untitled

    Abstract: No abstract text available
    Text: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 ^ D S o n PACKAGE TO-257 Also available in Z Pack • • • DEVICE TYPE BVdss VOLTS Id @0.5 ID Qg AMPS OHMS nc Ciss Pf Pd WATTS NSFY31042 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100


    OCR Scan     		PDF O-257 NSFY31042 NSFY31040 NSFY30942 NSFY30940 NSFY30824 NSFY30828 NSFY30724 NSFY30728