Untitled
Abstract: No abstract text available
Text: Extract from the online catalog MTK-LOER Order No.: 3105012 The illustration shows version MTK-LOEL Disconnect and test disconnect terminal block, Connection type: Screw connection, Cross section: 0.2 mm² - 4 mm²,
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CL-2009)
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Untitled
Abstract: No abstract text available
Text: Module no:3105012 LabelId:3105012 Operator:Phoenix 19:06:05, Donnerstag, 28. Juni 2001 MTK-LOE with screw / solder connection Terminal width 5.2 IEC 2 [mm ] Connection data Solder connection rigid solid flexible stranded AWG I U [A] [V] 0.2-2.5 24-12 12
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schematic diagram induction heating
Abstract: RD-914 Axiohm 5v stepper motor Opto-Sensor heavy duty induction heating induction heating manual coil gold detector circuit diagram printhead module schematic induction heating
Text: THERMAL PRINTER MECHANISM Mini-Printer CM-RMBC CM-RMDG User Manual Reference 3105978-Z April 2000 AXIOHM, 1-9 Rue d’Arcueil 92120 Montrouge, France Tel : 33 (0) 1 47 46 78 00 Fax (33) (0) 1 47 46 78 76 1 / 43 IMPORTANT This manual contains the basic instructions to run your printer. Read it
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3105978-Z
schematic diagram induction heating
RD-914
Axiohm
5v stepper motor
Opto-Sensor
heavy duty induction heating
induction heating manual
coil gold detector circuit diagram
printhead module
schematic induction heating
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C16258H HIGH PERFORMANCE 2 5 6 K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH PRELIMINARY 30 35 40 45 50 Max. RAS Access Time, tRAC 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, Ocaa) 16 ns 18 ns 20 ns
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V53C16258H
16-bit
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Untitled
Abstract: No abstract text available
Text: M O S E L -V IT E L IC V52C4258 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM PRELIMINARY 60 70 80 10 Max. RAS Access Time, tp^c 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, (tcAC) 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, (tM )
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V52C4258
V52C4258
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Untitled
Abstract: No abstract text available
Text: iw‘ VITELIC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM 80 10 Max. RAS Access Time, tRAC 80 ns 100 ns Max. CAS Access Time, (tcAc) 25 ns 25 ns Max. Column Address Access Time, (t*) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tpc)
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V52C4256
3910N.
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ch cs s101 d
Abstract: No abstract text available
Text: JUN ì 2 '982 VITELIC V52C4258 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM HIGH PERFORMANCE V52C4258 80 10 Max. RAS Access Time, tRAC 80 ns 100 ns Max. CAS Access Time, (tcAC) 25 ns 25 ns Max. Column Address Access Time, (t^ ) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tPC)
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V52C4258
ch cs s101 d
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GAL20V8
Abstract: P20V8 20V8 GAL20V8B-10LP GAL20V8B-15QP GAL20V8B-7LJ GAL20V8B-7LP GAL20V8C gal 20v8 programming specification
Text: Lattice CAL20VQ High Performance E2CMOS PLD Generic Array Logic •■■■■■ UjJHIHZEffiHGESEEElZEl FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maximum Propagation Delay — Fmax = 166 MHz — 4 ns Maximum from Clock Input to Data Output
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CAL20V8
100ms)
GAL20V8
20V8B-15/25:
P20V8
20V8
GAL20V8B-10LP
GAL20V8B-15QP
GAL20V8B-7LJ
GAL20V8B-7LP
GAL20V8C
gal 20v8 programming specification
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x28hc256-12
Abstract: X28HC256-90 X28HC256-70
Text: im Advance Information High Speed X28HC256 256K 32K X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 70 ns * SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed
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X28HC256
x28hc256-12
X28HC256-90
X28HC256-70
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Diagram11
Abstract: A7-A14 X28HC256 X28VC256
Text: Advance Information High Speed X28HC256 256K 32K X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 70 ns * SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or Vpp Control Circuits — Self Timed — No Erase Before Write
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X28HC256
X28HC256
Diagram11
A7-A14
X28VC256
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AT27C010-55LI
Abstract: AT27C010 15DC 27C010L AT27C010
Text: AT27C01 O/L Features • • Fast Read Access Time - 45 ns Low Power CMOS Operation 100 |iA max. Standby 25 mA max. Active at 5 MHz AT27C010L 40 mA max. Active at 5 MHz (AT27C010) Wide Selection of JEDEC Standard Packages 32-Lead 600-mil PDIP and Cerdip
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AT27C01
AT27C010L)
AT27C010)
32-Lead
600-mil
32-Pad
010/L
04-20KM/883
AT27C010L-20LM/883
AT27C010-55LI
AT27C010 15DC
27C010L
AT27C010
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Untitled
Abstract: No abstract text available
Text: Alle Bechle lorbehallen/ ill rights rtstrni 5 k 2 3 1 7,9 C 4.85 III B Ool. D o lo il. 2 0 - J U N - 0 2 None Slond. 0. 5 0 to 0. 6 5 Coble i ns u l a t o r 0 31056 2 0 - J U N -0 2 Mod. Ool. CV None I/O bellow CV loop. 60 13 026 5200 Par t - No. h o r.m ik
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Untitled
Abstract: No abstract text available
Text: Features M ËT • Fast Read Access Time - 70 ns • 5-Volt Only Reprogramming • Sector Program Operation - Single Cycle Reprogram Erase and Program - 512 Sectors (128 words/sector) - Internal Address and Data Latches for 128 Words • Internal Program Control and Timer
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AT29C1024
AT29C
AT29C1024-70JC
AT29C1024-70TC
AT29C1024-70JI
AT29C1024-70T1
AT29C1024-90JC
AT29C1024-90TC
AT29C1024-90JI
AT29C1024-90TI
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AT27C010 15DC
Abstract: AT270010L-70DM
Text: AT27C010/L Features • • • e e e e e e e Fast Read Access Time - 45 ns Low Power CMOS Operation 100 ^A max. Standby 25 mA max. A ctive at 5 MHz AT27C010L 40 mA max. A ctive at 5 MHz (AT27C01Q) W ide Selection o f JEDEC Standard Peckages 32-Lead OO&mil PEHP andC erdip
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AT27C010/L
AT27C010L)
AT27C01Q)
32-Lead
32-Pad
AT27C010/L
bi27C010L-20KM
AT27C010L-20LM
AT27C010L-20DM/883
AT27C010 15DC
AT270010L-70DM
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Waferscale Integration
Abstract: WS27C010F-55 WS27C010L WS57C010F EPROM 27512 vu025
Text: liJAFER S C A L E INTEGRATION 3 TE D HB ^5 GOOObST M ESWAF WS27C010F * Ä ADVANCE INFORMATION WAFERSCALE INTEGRATION, INC. 1 Meg 128K x 8 CMOS EPROM KEY FEATURES • High Performance — • EPI Processing 55 ns — — • S im plified Upgrade Path —
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WS27C010F
WS27C010L
WS27C010F
576-bit
T-46-13-29
Waferscale Integration
WS27C010F-55
WS27C010L
WS57C010F
EPROM 27512
vu025
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V 5 3C 1 81608 1M X 16 P A G E M O D E C M O S D Y N A M IC R A M W ITH E X T E N D E D D A TA O U T P U T P R E L IM IN A R Y HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAC 50 60 ns 70 ns Max. Column Address Access Time, (tCAA)
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V53C181608
V53C18160B
000353e
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Untitled
Abstract: No abstract text available
Text: LA NS DA LE SEMICONDUCTOR 35E D • SBfiflDB 0 0 0 0 3 5 ^ 2 ■ LTE MAXIMUM RATINGS T -4 3 -0 1 Rating Supply Operating Voltage Range - Vco TTL III MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com prise a family of transistor-transistor
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14-LEAD
16-LEAD
10-LEAD
24-LEAD
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Untitled
Abstract: No abstract text available
Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low Power Standby when Deselected • TTL Compatible I/O • 5 V± 10% Supply • Fully Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ CMOS 32K x 8 Static RAM
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LH52258A
28-Pin,
300-mil
LH52258A
28-Din,
DIP28-P-300)
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Untitled
Abstract: No abstract text available
Text: HM62W1664H Series HM62W1864H Series P r e lim in a r y 65536-word x 16/18-bit High Speed CMOS Static RAM T h e H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an asyncronous 3.3 V operation high speed static RAM organized as 64 kword x 16/18 bit. It realize h ig h sp eed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith
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HM62W1664H
HM62W1864H
65536-word
16/18-bit
1664H
1864H
400-mil
44-pin
1664HJP-25
1664Hto
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Untitled
Abstract: No abstract text available
Text: FORM 4 .0 4 - 0 0 1 C LTR - REVISION DATE RELEASED APPD 0 6 -2 7 -1 1 RoHS COMPLIANT 2 0 0 2 /9 5 /E C REVISION NOTIFICATION I NOTES: I PMA □ 1. ALL DIM ENSIO NS 2. WEIGHT: 0 .2 0 IN INCHES M IL L IM E TE R S □ lb s I I DEC—G 3 0 E —SIW—1 2 0 A
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DEC-G30F-SIW-120A
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X15V
Abstract: Z86233 Z86243 P24T 25p05
Text: < $3105 C u s t o m er P r o c u r em en t S p ec ific a tio n Z86233/243 CMOS Z8 8K ROM Co n s u m e r Co n t r o l l e r P r o c es s o r FEATURES Part ROM RAM Kbytes bytes Z86233 8 Z86243 8 237 236 Package Information I/O 24 32 28-pinDIP,SOIC,PLCC 40-pin DIP,
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Z86233/243
Z86233
28-pinDIP
Z86243
40-pin
44-pin
Z86C33/C43
X15V
P24T
25p05
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Untitled
Abstract: No abstract text available
Text: MOSEL M S 310512 65,536x8 CMOS Mask Programmable ROM FEATURES DESCRIPTION • Access time: 150ns max Th e M S 3 1 0 5 1 2 is a high-perform ance R ead Only M em ory organized as 6 5 ,5 3 6 words by 8 bits. It is designed to be compatible with all microprocessors and similar applica
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536x8
150ns
PID032
MS310512
MS310512-15PC
P28-3
MS310512-15XC
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Untitled
Abstract: No abstract text available
Text: MOSEL M S 310512 65,536x8 CMOS Mask Programmable ROM FEATURES DESCRIPTION • Access time: 150ns max The MS310512 is a high-performance Read Only Memory organized as 65,536 words by 8 bits. It is designed to be compatible with all microprocessors and similar applica
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150ns
MS310512)
MS310512H)
536x8
MS310512
PID032
MS310512
P28-3
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IRM3105
Abstract: Siemens Optoelectronic IR LED IRM3001 TV remote receive siemens unique
Text: SIEMENS IRM3001/3002/3105 5 V INFRARED DATA TRANSCEIVER IRM3001/3002 Pin Functions Function 1 LED Anode 2 LED Cathode 3 Transm it 4 Receive 5 Shut dow n FEATURES • Compatible with IrDA Specifications • Wide Dynamic Range • Automatic Threshold Control
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IRM3001
IRM3001/3002
IRM3001/3105
0DCH471
IRM3001/3002/3105
E3b32b
CJ472
IRM3105
Siemens Optoelectronic
IR LED
TV remote receive
siemens unique
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