RS-432
Abstract: RS323
Text: SENSITRON SEMICONDUCTOR 1N5772 TECHNICAL DATA DATA SHEET 4249, REV. - Isolated Diode Array Applications: • High Frequency Data Lines • RS-323 & RS-432 Networks • LAN, Ethernet, I/O Ports • IEC61000-4 compatible for ESD / EFT / Surge Features: • •
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1N5772
RS-323
RS-432
IEC61000-4
100ms
RS323
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1N5772
Abstract: Diode Array
Text: SENSITRON SEMICONDUCTOR 1N5772 TECHNICAL DATA DATA SHEET 4249, REV. A Isolated Diode Array Applications: • High Frequency Data Lines • RS-323 & RS-432 Networks • LAN, Ethernet, I/O Ports • IEC61000-4 compatible for ESD / EFT / Surge Features: • •
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1N5772
RS-323
RS-432
IEC61000-4
1N5772
Diode Array
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Untitled
Abstract: No abstract text available
Text: 19-4249; Rev 0; 8/08 Battery-Backup Circuits with Regulated Output Voltage The MAX16023/MAX16024 low-power battery-backup circuits with a regulated output are capable of delivering up to 100mA output current. The MAX16023/MAX16024 include a low-dropout regulator, a microprocessor µP
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MAX16023/MAX16024
100mA
MAX16023/MAX16024
T833-2
T1033-1
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JESD51-7
Abstract: No abstract text available
Text: 19-4249; Rev 0; 8/08 Battery-Backup Circuits with Regulated Output Voltage The MAX16023/MAX16024 low-power battery-backup circuits with a regulated output are capable of delivering up to 100mA output current. The MAX16023/MAX16024 include a low-dropout regulator, a microprocessor µP
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MAX16023/MAX16024
100mA
MAX16023/MAX16024
T833-2
T1033-1
JESD51-7
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IEC60950-1
Abstract: JESD51-7
Text: 19-4249; Rev 0; 8/08 Battery-Backup Circuits with Regulated Output Voltage The MAX16023/MAX16024 low-power battery-backup circuits with a regulated output are capable of delivering up to 100mA output current. The MAX16023/MAX16024 include a low-dropout regulator, a microprocessor µP
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MAX16023/MAX16024
100mA
MAX16023/MAX16024
T833-2
T1033-1
IEC60950-1
JESD51-7
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OS-PCN-2010-033-A
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4248 SFH 4249 This data sheet is under PCN-revision (OS-PCN-2010-033-A). Not to be used for design-in. Wesentliche Merkmale
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OS-PCN-2010-033-A)
OS-PCN-2010-033-A
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ns 4248
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4248 SFH 4249 This data sheet is under PCN-revision (see separate data sheet with respect to "OS-PCN-2010-033-A"). Do not use this version for design-in.
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OS-PCN-2010-033-A"
ns 4248
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GPLY6127
Abstract: GPLY6128 OHF02505 OHF03819 SFH4249 ns 4248
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4248 SFH 4249 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • • • • • • • • • •
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4248 SFH 4249 This data sheet is under PCN-revision (see separate data sheet with respect to "OS-PCN-2010-033-A"). Do not use this version for design-in.
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OS-PCN-2010-033-A"
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ns 4248
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4248 SFH 4249 Wesentliche Merkmale Features • • • • • • • • • • Infrarot LED mit hoher Ausgangsleistung
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SFH4249
Abstract: SFH4248 Q65110A7518 Q65110A7519 ns 4248 4248
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4248 SFH 4249 gemäß OS-PCN-2009-021-A2 acc. to OS-PCN-2009-021-A2 Wesentliche Merkmale Features • • • • • •
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OS-PCN-2009-021-A2
OS-PCN-2009-021-A2
SFH4249
SFH4248
Q65110A7518
Q65110A7519
ns 4248
4248
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SFH4249
Abstract: Q65110A7518
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4248 SFH 4249 This data sheet is under PCN-revision (OS-PCN-2009-021-A2). Not to be used for design-in. PCN data sheet can be provided on request.
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OS-PCN-2009-021-A2)
SFH4249
Q65110A7518
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SFH4249
Abstract: Q65110A7518 GPLY6127 OHF02505 OHF03819
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4248 SFH 4249 Vorläufige Daten / Preliminary Data OS-PCN-2010-033-A. To be used for design-in. Wesentliche Merkmale Features
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OS-PCN-2010-033-A.
SFH4249
Q65110A7518
GPLY6127
OHF02505 OHF03819
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ns 4248
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4248 SFH 4249 gemäß OS-PCN-2009-021-A2 acc. to OS-PCN-2009-021-A2 Wesentliche Merkmale Features • • •
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OS-PCN-2009-021-A2
OS-PCN-2009-021-A2
ns 4248
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JEDEC J-STD-020d.01
Abstract: Q65110A7518
Text: 2012-09-25 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.0 / acc. to OS-PCN-2009-021-A2 SFH 4248, SFH 4249 Features: • • • • • Besondere Merkmale: High Power Infrared LED Short switching times
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OS-PCN-2009-021-A2
OS-PCN-2009-021-A2
D-93055
JEDEC J-STD-020d.01
Q65110A7518
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Am9151
Abstract: CD3024 DK 50 switching
Text: Am9151 Am9151 1024 x 4 Registered Static RAM with SSR — On-Chip Diagnostics Capability DISTINCTIVE CHARACTERISTICS • • High Speed - 40 ns cycle tim e 25 ns Max. setup and 15 ns Max. clock-to-output On-chip high-speed parallel register for pipelined sys
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Am9151
1024x4
MIL-STD-883,
CD3024
DK 50 switching
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Fuse-Programmable PROM
Abstract: CD3024 DK 50 switching
Text: Am 9151 Am9151 1024 x 4 Registered Static RAM with SSR — On-Chip Diagnostics Capability DISTINCTIVE CHARACTERISTICS • • High Speed - 40 ns cycle tim e 25 ns Max. setup and 15 ns Max. clock-to-output On-chip high-speed parallel register for pipelined sys
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Am9151
1024x4
Am9151
MIL-STD-883,
Fuse-Programmable PROM
CD3024
DK 50 switching
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ns 4249
Abstract: ns 4248
Text: Am27S55 32,768-Bit 4 0 9 6 x 8 Bipolar Registered PROM ADVANCE INFORMATION > 3 DISTINCTIVE CHARACTERISTICS "A " version offers superior performance with 20 ns set up time and 10 ns clock-to-output delay Slim, 24-pin, 300-mil lateral center package occupies
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Am27S55
768-Bit
24-pin,
300-mil
BD006440
Am27S55A
C0009590
ns 4249
ns 4248
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Untitled
Abstract: No abstract text available
Text: Am27S55 32,768-Bit 4 0 9 6 x 8 Bipolar Registered PROM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • "A " version offers superior performance with 20 ns set up time and 10 ns clock-to-output delay • Slim, 24-pin, 300-mil lateral center package occupies
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Am27S55
768-Bit
24-pin,
300-mil
Am27S55A
CD009590
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PDF
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Untitled
Abstract: No abstract text available
Text: Am 27S55 32,768-Bit 4096 x 8 Bipolar Registered PROM Am27S55 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • " A " version offers superior perform ance w ith 20 ns set up time and 10 ns clock-to-output delay Slim, 24-pin, 300-mil lateral center package occupies
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Am27S55
768-Bit
24-pin,
300-mil
BD006440
Am27S55A
cd009590
Ao-A11
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29057
Abstract: intel 4269
Text: 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY • High Performance Read — 80/120 ns Max. Access Time 40 ns Max. Output Enable Time a Low Power Consumption — 20 mA Typical Read Current ■ x8-Only Input/Output Architecture — Space-Constrained 8-bit
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28F002BC
16-KB
96-KB
128-KB
29057
intel 4269
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Untitled
Abstract: No abstract text available
Text: A G M & N K D I O K H F K [M lA ‘irD M 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY • ■ High-Performance Read — 200 ns Maximum Access Time a Deep Power-Down Mode High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks
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28F008SA-L
64-Kbyte
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Untitled
Abstract: No abstract text available
Text: I • b 4 2 7 5 5 5 D O M l ^ 5 7 b M N E C E À T A NEC S H E E T MOS INTEGRATED CIRCUIT /¿PD42S4900, 424900 4 M BIT DYNAMIC RAM 512 K-WORD BY 9-BIT, FAST PAGE MODE DESCRIPTION ★ The /iPD42S4900, 424900 are 524 288 w ords by 9 bits dynam ic CMOS RAMs. The fast page m ode cap ab ility
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PD42S4900,
/iPD42S4900,
PD42S4900
28-pin
bMg75a5
PD42S4900G5,
424900G5
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Untitled
Abstract: No abstract text available
Text: NEC pPD424900A/L, 42S4900A/L 524,288 X 9-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The ¿/PD424900A/L and /UPD42S4900A/L are fast-page dynam ic RAMs organized as 524,288 words by 9 bits a nd designed to o p e ra te from a single power supply. O ptional features are pow er supply voltage + 5 V or
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uPD424900A/L
42S4900A/L
/PD424900A/L
/UPD42S4900A/L
24900A
424900L
42S4900A
42S4900L
28-pin
/UPD424900A/L,
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