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    NS 301 Search Results

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    NS 301 Price and Stock

    TDK-Lambda Corporation NNS30-15

    AC/DC CONVERTER 15V 51W
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    DigiKey NNS30-15 Bulk 6 1
    • 1 $671.04
    • 10 $637.484
    • 100 $637.484
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    Newark NNS30-15 Bulk 1
    • 1 -
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    Master Electronics NNS30-15
    • 1 $671.04
    • 10 $637.48
    • 100 $637.48
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    Sager NNS30-15 1
    • 1 $671.04
    • 10 $637.48
    • 100 $637.48
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    TDK-Lambda Corporation NNS30-12

    AC/DC CONVERTER 12V 30W
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    DigiKey NNS30-12 Bulk 1
    • 1 $671.04
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    Newark NNS30-12 Bulk 1
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    Sager NNS30-12 1
    • 1 $671.04
    • 10 $637.48
    • 100 $637.48
    • 1000 $637.48
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    Kingfisher Controls KURNS-3012-NOWC5

    SENSOR PROX INDUCTIVE 12MM CYL
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    DigiKey KURNS-3012-NOWC5 Bulk 1
    • 1 $72.57
    • 10 $72.57
    • 100 $65.3128
    • 1000 $65.3128
    • 10000 $65.3128
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    Kingfisher Controls KURNS-3012-POWC2

    SENSOR PROX INDUCTIVE 12MM CYL
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    DigiKey KURNS-3012-POWC2 Bulk 1
    • 1 $72.57
    • 10 $72.57
    • 100 $65.3128
    • 1000 $65.3128
    • 10000 $65.3128
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    Kingfisher Controls KURNS-3012-POWC5

    SENSOR PROX INDUCTIVE 12MM CYL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KURNS-3012-POWC5 Bulk 1
    • 1 $72.57
    • 10 $72.57
    • 100 $65.3128
    • 1000 $65.3128
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    NS 301 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CY7C1367A

    Abstract: GVT71512C18 4947a SRAM controller
    Text: CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 256K x 36/512K x 18 Synchronous Pipelined SRAM Features • Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns • Fast clock speed: 225 MHz, 200 MHz, 166 MHz, and 150 MHz • Fast OE access times: 2.5 ns, 3.0 ns, and 3.5 ns


    Original     		CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 36/512K CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 CY7C1367A GVT71512C18 4947a SRAM controller PDF

    NS-346B

    Abstract: 10KHZ NS-346A NS-346C NS-346D NS-346E 1MHz-1000MHz
    Text: BROADBAND CALIBRATED NOISE STANDARDS 10KHZ TO 26.5GHZ DESCRIPTION BROADBAND CALIBRATED OUTPUT CHARACTERISTICS FOR USE WITH NOISE FIGURE M ETERS MODEL FREQUENCY NS-346A * 0.01-18 GHz NS-346B * 0.01-18 GHz NS-346C + 0.01-26.5 GHz NS-346D * 0.01-18 GHz NS-346E + 0.01-26.5 GHz


    Original     		10KHZ NS-346A NS-346B NS-346C NS-346D NS-346E 5-18GHz RFN/30-10 RFN/25L RFN/25S NS-346B NS-346A NS-346C NS-346D NS-346E 1MHz-1000MHz PDF

    CY7C1360A

    Abstract: CY7C1362A 1362A
    Text: CY7C1360A CY7C1362A 256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Features • • • • • • • • • • • • • • • • • • Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns Fast clock speed: 225, 200, 166, and 150 MHz Fast OE access times: 2.5 ns, 3.0 ns, and 3.5 ns


    Original     		CY7C1360A CY7C1362A 36/512K CY7C1360A CY7C1362A 1362A PDF

    CY7C1360A

    Abstract: CY7C1362A
    Text: CY7C1360A CY7C1362A 256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Features • • • • • • • • • • • • • • • • • • Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns Fast clock speed: 225, 200, 166, and 150 MHz Fast OE access times: 2.5 ns, 3.0 ns, and 3.5 ns


    Original     		CY7C1360A CY7C1362A 36/512K CY7C1360A CY7C1362A PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1360A CY7C1362A 256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Features • • • • • • • • • • • • • • • • • • Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns Fast clock speed: 225, 200, 166, and 150 MHz Fast OE access times: 2.5 ns, 3.0 ns, and 3.5 ns


    Original     		CY7C1360A CY7C1362A 36/512K CY7C1360A CY7C1362A PDF

    28F128W18

    Abstract: 28F320W18 28F640W18 intel DOC matrix 7x8
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features Performance — 70 ns Asynchronous reads for 32 and 64 Mbit, 90 ns for 128 Mbit — 14 ns Clock to Data Output (tCHQV) — 20 ns Page Mode Read Speed


    Original     		28F320W18, 28F640W18, 28F128W18 128-Mbit 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 28F128W18 28F320W18 28F640W18 intel DOC matrix 7x8 PDF

    Untitled

    Abstract: No abstract text available
    Text: CYPRESS SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device DIP, LCC, and PLCC available — 7.5 ns commercial version 5 ns tco 5 ns t§ 7.5 ns tpo 133-MHz state machine — 10 ns military and industrial ver­ sions 6 ns tco 6 ns tg 10 ns tpo 110-MHz state machine


    OCR Scan     		133-MHz 110-MHz 15-ns 25-ns 28-Square 24-Lead PALC22V10Dâ PALC22V10D 24-Lead 300-Mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: iw VITELIC V 53C 256 FAMILY HIG H PERFORMANCE, LOW POWER 2S 6K X 1 B IT FAST PAGE MODE CMOS D YN AM IC RAM f HIGH PERFORMANCE V53C256 70/70L 80/80L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, tQAA 35 ns 40 ns 45 ns


    OCR Scan     		V53C256 70/70L 80/80L V53C256L PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ TTL Programmable Delay Modules Step Delay Max. Delay Output Rise Part No. ns ± ns ns ± ns time ns TTLPG301 TTLPG302 TTLPG303 TTLPG304 TTLPG305 TTLPG306 TTLPG307 TTLPG308 TTLPG309 TTLPG310 TTLPG315 TTLPG320 TTLPG325 TTLPG330 TTLPG335 TTLPG340 TTLPG345


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: iw“ VITELIC V53C1OOB FAMILY HIGH PERFORMANCE LOW POWER 1M X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY , 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Max. CAS Access Time, (tCAC)


    OCR Scan     		V53C1OOB 60/60L 70/70L 80/80L V53C100B V53C100BL V53C100B-80 PDF

    L-SIM-30-1

    Abstract: No abstract text available
    Text: SIEMENS 1 M X 8-Bit Dynamic RAM Module HYM 22100S-60/-70/-80 Advanced Information • 1 048 576 words by 8-bit organization • Fast access and cycle 60 ns access time 110 ns cycle time -60 70 ns access time 130 ns cycle time (-70 80 ns access time 150 ns cycle time (-80


    OCR Scan     		22100S-60/-70/-80 0235b05 5550b L-SIM-30-1 PDF

    V53C400

    Abstract: PIN CONFIGURATION 7411 TTL 7411 ms1953
    Text: I s V VITELIC V53C400 HIGH PERFORMANCE, LO W POWER 4M X 1 B IT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 35 ns 40 ns 50 ns Min. Fast Page Mode Cycle Time, ( t ^ )


    OCR Scan     		V53C400 70/70L 80/80L 10/10L V53C400L V53C400-10 V53C400L-0 PIN CONFIGURATION 7411 TTL 7411 ms1953 PDF

    Untitled

    Abstract: No abstract text available
    Text: M i i V VITELIC V53C400 HIGH PERFORMANCE, LOW POWER 4M X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 35 ns 40 ns 50 ns Min. Fast Page Mode Cycle Time, (tpc)


    OCR Scan     		V53C400 70/70L V53C400 80/80L 10/10L V53C400L V53C400-10 V53C400L PDF

    256KX4

    Abstract: V53C104B V53C104 casco battery
    Text: JVH VITEUC V53C104B HIGH PERFORMANCE, LO W POW ER 256K X 4 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 60/60L 70/70L 80/80L Max. RAS Access Time, tp ^ 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Min. Fast Page Mode Cyde Time, (tp^)


    OCR Scan     		V53C104B 60/60L 70/70L 80/80L V53C104BL V53C104B-80 V53C104B-1 256KX4 V53C104 casco battery PDF

    Untitled

    Abstract: No abstract text available
    Text: if “ VITELIC V53C404 HIGH PERFORMANCE, LO W POWER 1 M X 4 B IT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 35 ns 4 0 ns 50 ns Min. Fast Page Mode Cycle Time, (tpç)


    OCR Scan     		V53C404 70/70L V53C404 80/80L 10/10L V53C404L V53C404-10 V53C404L PDF

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V TTE U C PRELIMINARY V52C8258 MULTIPORT VIDEO RAM WITH 256K X 8 DRAM AND 512 X 8 SAM HIGH PERFORM ANCE V 52C8258 60 70 80 Max. RAS Access Time, Irac 60 ns 70 ns 80 ns Max. CAS Access Time, (Icac) 15 ns 20 ns 25 ns Max. Column Address Access Time, (t^ )


    OCR Scan     		V52C8258 52C8258 V52C8258 PDF

    Untitled

    Abstract: No abstract text available
    Text: PLDC18G8 I CYPRESS SEMICONDUCTOR • Fast — Commercial: tpo = 12 ns, tc o = 10 ns, t§ = 10 ns — Military/Industrial: tpD = 15 ns, t c o = 12 ns, t§ — 12 ns • Low power Generic architecture to replace stan­ dard logic functions including: 10H8, 1 2 H 6 ,1 4 H 4 ,16H 2,10L 8,12L 6,14L 4,


    OCR Scan     		PLDC18G8 disconnDC18G8Lâ 20-Lead 300-Mil) PLDC18G8Lâ C18G8-12W PDF

    palce22v10 programming guide

    Abstract: No abstract text available
    Text: PALCE22V10 CYPRESS Flash Erasable, Reprogrammable CMOS PAL Device Features 5 ns tpo 181-MHz state machine • Low power — 10 ns military and industrial versions 7 nstco — 90 mA max. commercial 10 ns 6 nsts 10 ns tpQ — 130 mA max. commercial (5 ns)


    OCR Scan     		181-MHz PALCE22V10 110-MHz 15-ns 25-ns 24-Lead 300-Mil) 24-Lead palce22v10 programming guide PDF

    256KX4

    Abstract: V53C104B AA44A V53C104
    Text: Mu ! *m — iw“ VITEUC V53C104B HIGH PERFORMANCE, LOW POWER 256K X 4 B IT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 60/60L 70/70L 80/80L Max. RAS Access Time, tp ^ 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Min. Fast Page Mode Cyde Time, (tpç)


    OCR Scan     		V53C104B 60/60L 70/70L 80/80L V53C104BL 200fiA 200jiA 200fiA V53C104B-80 256KX4 AA44A V53C104 PDF

    Untitled

    Abstract: No abstract text available
    Text: VITEUC V53C100H UL TRA-HIGH PERFORMANCE LOW POWER 1MX1 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C100H ADVANCE INFORMA TION 45/45L 50/50L 55/55L 60/60L Max. RAS Access Time, 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Time, tCAA 24 ns


    OCR Scan     		V53C100H 45/45L 50/50L 55/55L 60/60L V53C100HL 31NrlSe^ C9145 A53-11 PDF

    V53C104

    Abstract: l04b 256KX4 V53C104B tnr dip mil std v53c104b80
    Text: JVH VITEUC V53C104B HIGH PERFORMANCE, LO W POW ER 256K X 4 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 6 0 /6 0 L 7 0 /7 0 L 8 0 /80L Max. RAS Access Time, t p ^ 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Min. Fast Page Mode Cyde Time, (tp^)


    OCR Scan     		V53C104B 60/60L 70/70L 80/80L V53C104BL V53C104B-80 V53C104B-1 V53C104 l04b 256KX4 tnr dip mil std v53c104b80 PDF

    Untitled

    Abstract: No abstract text available
    Text: An m im y V1TELIC V53C404 HIGH PERFORMANCE, LO W POWER 1 M X 4 B IT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 7 0 /7 0 L 8 0 /8 0 L 1 0 /10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, {tCAA) 35 ns 40 ns 50 ns Min. Fast Page Mode Cycle Time, ( t ^ )


    OCR Scan     		V53C404 70/70L 80/80L 10/10L V53C404L V53C404-10 PDF

    HH2C

    Abstract: No abstract text available
    Text: An m im y V1TELIC V53C404 HIGH PERFORMANCE, LO W POWER 1 M X 4 B IT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 7 0 /7 0 L 8 0 /8 0 L 1 0 /10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, {tCAA) 35 ns 40 ns 50 ns Min. Fast Page Mode Cycle Time, ( t ^ )


    OCR Scan     		V53C404 70/70L 80/80L 10/10L V53C404L V53C404-10 HH2C PDF

    siemens capacitors

    Abstract: E309
    Text: SIEMENS 1 M X 8-Bit Dynamic RAM Module HYM 22100S-60/-70/-80 Advanced Information • 1 048 576 words by 8-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version) 80 ns access time


    OCR Scan     		22100S-60/-70/-80 siemens capacitors E309 PDF