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    NPN VCEO 1000V Search Results

    NPN VCEO 1000V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN VCEO 1000V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5015S

    Abstract: No abstract text available
    Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015S O205AD) 10/20m 1-Aug-02 2N5015S PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015SX O205AD) 10/2Parameter 10/20m 17-Jul-02 PDF

    2N5015SX

    Abstract: 1000v, NPN
    Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015SX O205AD) 10/20m 1-Aug-02 2N5015SX 1000v, NPN PDF

    2N5015

    Abstract: No abstract text available
    Text: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015 O205AD) 10/25m 1-Aug-02 2N5015 PDF

    2N5015X

    Abstract: No abstract text available
    Text: 2N5015X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015X O205AD) 10/20m 1-Aug-02 2N5015X PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015S O205AD) 10/20Parameter 10/20m 17-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015 O205AD) 10/25mParameter 10/25m 17-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015 O205AD) 10/25m 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5015X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015X O205AD) 10/20Parameter 10/20m 17-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015S O205AD) 10/20m 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5015X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015X O205AD) 10/20m 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015SX O205AD) 10/20m 19-Jun-02 PDF

    BUX31

    Abstract: BUX31A BUX31B NPN VCEo 1000V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX31/A/B DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min)-BUX31 = 450V (Min)-BUX31A = 450V (Min)-BUX31B ·Low Saturation Voltage


    Original     		BUX31/A/B -BUX31 -BUX31A -BUX31B BUX31 BUX31A BUX31B BUX31 BUX31A BUX31B NPN VCEo 1000V PDF

    transistor VCE 1000V

    Abstract: NPN Transistor VCEO 1000V 220v 2a transistor NPN Transistor 450v 1A IC 1A datasheet transistor 1000V transistor Ic 1A datasheet NPN SGSF313PI 1000v, NPN SGSF31
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313PI DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line


    Original     		SGSF313PI transistor VCE 1000V NPN Transistor VCEO 1000V 220v 2a transistor NPN Transistor 450v 1A IC 1A datasheet transistor 1000V transistor Ic 1A datasheet NPN SGSF313PI 1000v, NPN SGSF31 PDF

    npn 1000V 15A

    Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in


    Original     		MJW16010A npn 1000V 15A NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V PDF

    NPN Transistor VCEO 1000V

    Abstract: transistor 2sC3552 2SC3552
    Text: Silicon Epitaxial Planar Transistor 2SC3552 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VF tf


    Original     		2SC3552 MT-100 NPN Transistor VCEO 1000V transistor 2sC3552 2SC3552 PDF

    BUT11AF

    Abstract: transistor VCBO 1000V IC 100mA 11AF BUT11F
    Text: Preliminary BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850


    Original     		BUT11F/11AF O-220F BUT11F BUT11AF BUT11AF transistor VCBO 1000V IC 100mA 11AF BUT11F PDF

    2SC5407

    Abstract: npn vces 1700v 8a
    Text: Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO


    Original     		2SC5407 64kHz, 2SC5407 npn vces 1700v 8a PDF

    11AF

    Abstract: BUT11AF BUT11F
    Text: Preliminary BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850


    Original     		BUT11F/11AF O-220F BUT11F BUT11AF 11AF BUT11AF BUT11F PDF

    transistor VCE 1000V to220

    Abstract: No abstract text available
    Text: KSC5405 KSC5405 High Voltage Power Switch Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage


    Original     		KSC5405 O-220 KSC5405TU O-220 transistor VCE 1000V to220 PDF

    2SC5413

    Abstract: No abstract text available
    Text: Power Transistors 2SC5413 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V Collector to emitter voltage VCEO 600 V Emitter to base voltage


    Original     		2SC5413 2SC5413 PDF

    2SC5516

    Abstract: 2SC5516 equivalent NPN Transistor VCEO 1000V
    Text: Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage


    Original     		2SC5516 64kHz, 2SC5516 2SC5516 equivalent NPN Transistor VCEO 1000V PDF

    2SC5478

    Abstract: No abstract text available
    Text: Power Transistors 2SC5478 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V Collector to emitter voltage VCEO 600 V Emitter to base voltage


    Original     		2SC5478 64kHz, 2SC5478 PDF

    2SC5440

    Abstract: No abstract text available
    Text: Power Transistors 2SC5440 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage


    Original     		2SC5440 2SC5440 PDF