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    NPN TRANSISTORS 700V 1A Search Results

    NPN TRANSISTORS 700V 1A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTORS 700V 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n5157

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N5157 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING See Fig.2 PIN


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    PDF 2N5157 2n5157

    2N5157

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com 2N5157 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING See Fig.2 PIN DESCRIPTION


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    PDF 2N5157 2N5157

    MJE13005

    Abstract: MJE13005 2 equivalent mje13005 transistors mje13005 npn transistors 700V 1A
    Text: SavantIC Semiconductor Product Specification MJE13005 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/


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    PDF MJE13005 O-220C MJE13005 MJE13005 2 equivalent mje13005 transistors mje13005 npn transistors 700V 1A

    act30bht

    Abstract: 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003
    Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation


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    PDF ACT30 65kHz 100kHz ACT30 act30bht 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003

    act30bht

    Abstract: 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht ACT30 flyback 13003 act30bh act30 application
    Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation


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    PDF ACT30 65kHz 100kHz ACT30 man50 act30bht 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht flyback 13003 act30bh act30 application

    mje13009l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


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    PDF MJE13009 MJE13009 QW-R214-011 mje13009l

    mje13009 equivalent

    Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


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    PDF MJE13009 MJE13009 MJE13009L QW-R214-011 mje13009 equivalent 2N2222 SOA mje13009l MJE13009L-T3P-T 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data

    mje13009 equivalent

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


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    PDF MJE13009 MJE13009 O-220F QW-R219-007 mje13009 equivalent

    BUV48CFI

    Abstract: npn transistors 700V 1A tc2555
    Text: SavantIC Semiconductor Product Specification BUV48CFI Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package. ·High voltage. ·Fast switching speed. APPLICATIONS ·Linear and switching industrial equipment. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF BUV48CFI BUV48CFI npn transistors 700V 1A tc2555

    BUV48C

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification BUV48C Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package. ·High voltage. ·Fast switching speed. APPLICATIONS ·Linear and switching industrial equipment. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF BUV48C BUV48C

    BUX48C

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification BUX48C Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ·Fast switching speed APPLICATIONS ·Linear and switching industrial equipment. PINNING see fig.2 PIN DESCRIPTION 1 Base 2 Emitter


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    PDF BUX48C BUX48C

    BUL6825

    Abstract: npn transistors 700V 1A
    Text: SavantIC Semiconductor Product Specification BUL6825 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Relay drivers ·Inverters ·Switching regulators ·Deflection circuits PINNING PIN DESCRIPTION 1


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    PDF BUL6825 O-220C BUL6825 npn transistors 700V 1A

    MJE13005

    Abstract: mje130 npn transistors 700V 1A MJE-13005 equivalent mje13005 MJE13005 2
    Text: Inchange Semiconductor Product Specification MJE13005 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed APPLICATIONS ・Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/


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    PDF MJE13005 O-220C MJE13005 mje130 npn transistors 700V 1A MJE-13005 equivalent mje13005 MJE13005 2

    BUL128D

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification BUL128D Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost


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    PDF BUL128D O-220C BUL128D

    STC13007

    Abstract: npn transistors 700V 1A L1340 f259
    Text: STC13007 !!!!!!!!! !!NPN POWER TRANSISTORS FEATURES HIGH SPEED SWITCHING HIGH VOLTAGE CAPABILITY WIDE SOA APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST  SWITCH POWER SUPPLY  Absolute Maximum Ratings Tc=25qC TO-220 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


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    PDF STC13007 O-220 STC13007 npn transistors 700V 1A L1340 f259

    MJE13009L

    Abstract: mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 1 TO-3P DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are


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    PDF MJE13009 MJE13009 O-220 O-220F QW-R203-024 MJE13009L mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T

    npn transistors 400V 1A To92

    Abstract: No abstract text available
    Text: 3DD13003B NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 1.25MAX 2.92 MIN power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Collector-Base Voltage VCBO VCEO Collector-Emitter Voltage


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    PDF 3DD13003B 25MAX 100mA, npn transistors 400V 1A To92

    743 ic

    Abstract: JE13009 MJE13009 IC 741 AMP
    Text: MJE13009 NPN POWER TRANSISTORS 400 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus - 400V (Min). • VCEV = 700V blocking capability


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    PDF MJE13009 T0-220-AB MJE13009 743 ic JE13009 IC 741 AMP

    TI3007

    Abstract: UMT13007 UMT1300S 100C 100-C UMT13006
    Text: UMT13006 UMT13007 POWER TRANSISTORS 8A, 700V, Fast Switching, Silicon NPN Mesa FEATURES DE S C R IP T IO N • • • • • • These high voltage glass passivated power transistors, in a plastic TO 220AB package, combine fast switching, low saturation


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    PDF UMT13006 TI3007 220AB UMT1300S UMT13007 TI3007 UMT13007 100C 100-C

    e13005 2

    Abstract: E13005 MJE1300 E13005 -2 transistor E13005 E13005 D e13005- 2 transistors mje13005 npn transistors 700V 1A UJ05
    Text: MJE13005 NPN POWER TRANSISTORS 400 VOLTS 4 AMP, 75 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • V C E O su s = 400V (Min). • VcEV = 700V blocking capability CASE STYLE T0-220AB


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    PDF MJE13005 T0-220AB U-J05 JE1300! E13005- e13005 2 E13005 MJE1300 E13005 -2 transistor E13005 E13005 D e13005- 2 transistors mje13005 npn transistors 700V 1A UJ05

    MJE13007

    Abstract: v733 VCB 400V MJE13 U105
    Text: MJE13007 NPN POWER TRANSISTORS 400 VOLTS 8 AMP, 80 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • VcEO sus = 400V (Min). • VCEV = 700V blocking capability C A S E S T Y L E T0-220AB


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    PDF MJE13007 T0-220AB ip26j T0-220-AB MJE13007 v733 VCB 400V MJE13 U105

    Untitled

    Abstract: No abstract text available
    Text: HARR IS S E M I C O N D SECTOR 27E » • 4302271 0Q2QM?b Q * H A S Power T ra n sis to rs - MJE13009 File Number 15.92 T -3 3 - »3 High-Speed Silicon N-P-N


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    PDF MJE13009 JE13009 T-33-13

    Untitled

    Abstract: No abstract text available
    Text: Power T r a n s is t o r s - - M JE 1 3 0 0 7 HARRIS SEMICOND File N um ber SECTOR 2?E » B 4302271 D OS DMb b 15.90 6 MHAS T -S 5 - ' 3 H igh-Speed Silicon N-P-N


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    PDF MJE13007 t-33-13

    EB 13005

    Abstract: Transistors 13005 D MJE13004
    Text: 7 ^ 5 ^ 5 3 7 0 0 5 ^ 1 0 5 1 13004 13005 • SGS-THOMSON ¡ILIOTa «! S G S-TH0MS0N MJE MJ E 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon muitiepitaxial me­ sa NPN transistors in JedecTO -220 plastic package particularly intended for switch-mode applications.


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    PDF MJE13004/13005 MJE13004 MJE13005 MJE13004-MJE13005 T-33-73 EB 13005 Transistors 13005 D MJE13004