NPN TRANSISTOR WC Search Results

NPN TRANSISTOR WC Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

NPN TRANSISTOR WC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
B.A date sheet karachi Abstract: BF547W marking code e2 m1b marking BF547 SCD31 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors June 1994 Philips Semiconductors Product specification NPN 1 GHz wideband transistor	Original	BF547W OT323 BF547W BF547. MBC870 SCD31 123065/1500/02/pp12 B.A date sheet karachi marking code e2 m1b marking BF547 SCD31	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
MRF1057T1 Abstract: RN2322 Text: Order this document by MRF1057T1/D Advance Information NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 70 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @ 1.0 GHz, 3.0 V and 5.0 mA	Original	MRF1057T1/D MRF1057T1 MRF1057T1/D 17SEP00 17MAR01 RN2322	PDF
PART NUMBER MARKING SC70-6 Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70 Text: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching	Original	FFB3946 SC70-6 2N3904 2N3906 PART NUMBER MARKING SC70-6 pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70	PDF
Untitled Abstract: No abstract text available Text: / = 7 SGS-THOM SOil BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS: . MOTOR CONTROL . HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency	OCR Scan	BUTW92	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3444 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3444 is a silicon NPN epitaxial type transistor designed for relay OUTLINE DRAWING u"« drive, power supply application.	OCR Scan	2SC3444 2SC3444 2SA1364. 500mA, 500mW SC-62	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5214 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. unit mm It designed with high collector current and 2 to 3.5W low frequency power	OCR Scan	2SC5214 2SC5214 2SA1947. SC-62	PDF
BUX12 Abstract: sonde type k Emetteur pbgi mfb2 bux THOMSON k50 transistor thomson transistor de puissance rf Text: *B UX12 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS T O R S IL IC IU M NPN, M ESA T R IP L E D IF F U S E ^ P r e fe rr e d device Dispositif recommandé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension	OCR Scan	BUX12 CB-19 BUX12 sonde type k Emetteur pbgi mfb2 bux THOMSON k50 transistor thomson transistor de puissance rf	PDF
Untitled Abstract: No abstract text available Text: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d \| MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,	OCR Scan	b3b72S4 MJ10014 MJ10014	PDF
transistor MU 813 Abstract: case 317-01 MRF931 Text: MOTOROLA SC XSTRS/R F 4b E 7> • b3b72S4 0ÜT4«Î47 0 MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA MRF931 T he R F Line LOW CU RREN T HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON . . . designed primarily for use in tow-power amplifiers to 1.0 GHz.	OCR Scan	b3b72S4 MRF931 transistor MU 813 case 317-01 MRF931	PDF
Untitled Abstract: No abstract text available Text: TRANSISTOR ARRAY <1 Q 2 TRIPLE NPN T K series DARLINGTON T R A N S IS T O R A R R A Y 4* F e a tu re s Ä • NPN 3 E S # « J£ • 8 > iOu -i > 7 ' \ > ,-z.y • * - K A' , Vz = 60±l0V • h P t = 2.5W • ¡S& jfcitlipp, min.1500 • Triple NPN darlington transistor array	OCR Scan		PDF
transistor bc 577 Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575 Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2	OCR Scan	47ki2 Q62702-C2496 OT-363 transistor bc 577 bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575	PDF
a02 Transistor rf Abstract: transistor bf 198 Text: 25C 0 • a23StiG5 0DG444b a NPN Silicon RF Transistor - - SIEMENS AK TIEN 6E SE LL SC HA F “ ■SIE6r 25C. 0444Ó _ 0 _ r ~ BF198 3 / - z-f fo r gain-controlled T V IF am plifier sta g e s BF 198 is an NPN silicon planar radio-frequency transistor in TO 9 2 plastic package	OCR Scan	a23StiG5 0DG444b BF198 023Sfe QQQ4450 a02 Transistor rf transistor bf 198	PDF

Motorola AN-546 Abstract: MRF460 an-546 motorola AN282A motorola application note AN-546 AN546 2N6368 2648A str 2652 motorola an-282a application Text: 1EE D I b3b 72 54 00fl7fc.?fc> M \| MOTOROLA SC MOTOROLA r'33-/r X STR S/R SEM ICO NDUCTOR TECHNICAL DATA MRF460 T h e R F L in e 40 W PEP - 3 0 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for applications as a high-power linear ampli	OCR Scan	00fl7fc. 33-/r MRF460 2N6368 RF460 AN-282A. AN-546. Motorola AN-546 MRF460 an-546 motorola AN282A motorola application note AN-546 AN546 2N6368 2648A str 2652 motorola an-282a application	PDF
BUJ106A Abstract: No abstract text available Text: Philips Sem iconductors Preliminary specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control	OCR Scan	BUJ106A O220AB 1E-06 BUJ106A	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kD, R2=47kiî) Cl Tape loading orientation	OCR Scan	Q62702-C2486 OT-363 as35b05 D15DLSB E35bD5 01EDbS4	PDF
564 sot363 Abstract: No abstract text available Text: SIEMENS BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=22k£2, R2=22k£i) Tape loading orientation	OCR Scan	Q62702-C2375 OT-363 564 sot363	PDF
Untitled Abstract: No abstract text available Text: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation	OCR Scan	10kiJ, Q62702-C2495 OT-363	PDF
BUT12 Abstract: No abstract text available Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/nigh frequency lighting ballast applications and converters, inverters, switching regulators,	OCR Scan	BUT12AI T0220AB 20icon 1E-01 1E-02 BUT12	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by BUL44/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L 44* BUL44F* SW ITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES	OCR Scan	BUL44/D BUL44F* BUL44/BUL44F BUL44F 221D-02 O-220	PDF
hp2530 Abstract: IB32 MPS-U60 MPSU60 transistor ll6 TRANSISTOR mpsu60 Text: MOTOROLA SEMICONDUCTOR MPS-U60 TECHNICAL DATA ¡s& CON ANNULAR TRANSISTOR PNP SILICON HIGH VOLTAGE TRANSISTOR sigred for general-purpose applications requiring high breakItages, low saturation voltages and low capacitance. Com plem ent to NPN T y p e M P S -U IO	OCR Scan	MPS-U60 hp2530 IB32 MPS-U60 MPSU60 transistor ll6 TRANSISTOR mpsu60	PDF
2sa 940 Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu Text: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are	OCR Scan	2SC2530 35MHz 2sa 940 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu	PDF
AT-310 Abstract: AT-31011 AT-31033 SAI SOT23 Text: Thal mLßm HP AE CWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data - I AT-31011 AT-31033 Features Description • High Perform ance Bipolar	OCR Scan	AT-31011 AT-31033 AT-31011: AT-31033: OT-143 OT-143 AT-31011) OT-23 AT-31033) AT-310 SAI SOT23	PDF

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NPN TRANSISTOR WC Search Results

NPN TRANSISTOR WC Result Highlights (5)

NPN TRANSISTOR WC Datasheets Context Search

MN1280

B.A date sheet karachi

oz960

MRF1057T1

PART NUMBER MARKING SC70-6

Untitled

Untitled

Untitled

BUX12

Untitled

transistor MU 813

Untitled

transistor bc 577

a02 Transistor rf

Motorola AN-546

BUJ106A

Untitled

564 sot363

Untitled

BUT12

Untitled

hp2530

2sa 940

AT-310