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    NPN TRANSISTOR WC Search Results

    NPN TRANSISTOR WC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM2212RZ Analog Devices Low Noise,Matched Dual NPN Tra Visit Analog Devices Buy
    SSM2212CPZ-R7 Analog Devices Low Noise,Matched Dual NPN Tra Visit Analog Devices Buy
    SSM2212RZ-R7 Analog Devices Low Noise,Matched Dual NPN Tra Visit Analog Devices Buy
    SSM2212RZ-RL Analog Devices Low Noise,Matched Dual NPN Tra Visit Analog Devices Buy
    SSM2212CPZ-RL Analog Devices Low Noise,Matched Dual NPN Tra Visit Analog Devices Buy

    NPN TRANSISTOR WC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    B.A date sheet karachi

    Abstract: BF547W marking code e2 m1b marking BF547 SCD31
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors June 1994 Philips Semiconductors Product specification NPN 1 GHz wideband transistor


    Original     		PDF BF547W OT323 BF547W BF547. MBC870 SCD31 123065/1500/02/pp12 B.A date sheet karachi marking code e2 m1b marking BF547 SCD31

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    MRF1057T1

    Abstract: RN2322
    Text: Order this document by MRF1057T1/D Advance Information NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 70 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @ 1.0 GHz, 3.0 V and 5.0 mA


    Original     		PDF MRF1057T1/D MRF1057T1 MRF1057T1/D 17SEP00 17MAR01 RN2322

    PART NUMBER MARKING SC70-6

    Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
    Text: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching


    Original     		PDF FFB3946 SC70-6 2N3904 2N3906 PART NUMBER MARKING SC70-6 pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70

    Untitled

    Abstract: No abstract text available
    Text: / = 7 SGS-THOM SOil BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS: . MOTOR CONTROL . HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency


    OCR Scan     		PDF BUTW92

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3444 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3444 is a silicon NPN epitaxial type transistor designed for relay OUTLINE DRAWING u"« drive, power supply application.


    OCR Scan     		PDF 2SC3444 2SC3444 2SA1364. 500mA, 500mW SC-62

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5214 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. unit mm It designed with high collector current and 2 to 3.5W low frequency power


    OCR Scan     		PDF 2SC5214 2SC5214 2SA1947. SC-62

    BUX12

    Abstract: sonde type k Emetteur pbgi mfb2 bux THOMSON k50 transistor thomson transistor de puissance rf
    Text: *B UX12 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS T O R S IL IC IU M NPN, M ESA T R IP L E D IF F U S E ^ P r e fe rr e d device Dispositif recommandé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension


    OCR Scan     		PDF BUX12 CB-19 BUX12 sonde type k Emetteur pbgi mfb2 bux THOMSON k50 transistor thomson transistor de puissance rf

    Untitled

    Abstract: No abstract text available
    Text: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,


    OCR Scan     		PDF b3b72S4 MJ10014 MJ10014

    transistor MU 813

    Abstract: case 317-01 MRF931
    Text: MOTOROLA SC XSTRS/R F 4b E 7> • b3b72S4 0ÜT4«Î47 0 MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA MRF931 T he R F Line LOW CU RREN T HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON . . . designed primarily for use in tow-power amplifiers to 1.0 GHz.


    OCR Scan     		PDF b3b72S4 MRF931 transistor MU 813 case 317-01 MRF931

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR ARRAY <1 Q 2 TRIPLE NPN T K series DARLINGTON T R A N S IS T O R A R R A Y 4* F e a tu re s Ä • NPN 3 E S # « J£ • 8 > iOu -i > 7 ' \ > ,-z.y • * - K A' , Vz = 60±l0V • h P t = 2.5W • ¡S& jfcitlipp, min.1500 • Triple NPN darlington transistor array


    OCR Scan     		PDF

    transistor bc 577

    Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2


    OCR Scan     		PDF 47ki2 Q62702-C2496 OT-363 transistor bc 577 bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575

    a02 Transistor rf

    Abstract: transistor bf 198
    Text: 25C 0 • a23StiG5 0DG444b a NPN Silicon RF Transistor - - SIEMENS AK TIEN 6E SE LL SC HA F “ ■SIE6r 25C. 0444Ó _ 0 _ r ~ BF198 3 / - z-f fo r gain-controlled T V IF am plifier sta g e s BF 198 is an NPN silicon planar radio-frequency transistor in TO 9 2 plastic package


    OCR Scan     		PDF a23StiG5 0DG444b BF198 023Sfe QQQ4450 a02 Transistor rf transistor bf 198

    Motorola AN-546

    Abstract: MRF460 an-546 motorola AN282A motorola application note AN-546 AN546 2N6368 2648A str 2652 motorola an-282a application
    Text: 1EE D I b3b 72 54 00fl7fc.?fc> M | MOTOROLA SC MOTOROLA r'33-/r X STR S/R SEM ICO NDUCTOR TECHNICAL DATA MRF460 T h e R F L in e 40 W PEP - 3 0 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for applications as a high-power linear ampli­


    OCR Scan     		PDF 00fl7fc. 33-/r MRF460 2N6368 RF460 AN-282A. AN-546. Motorola AN-546 MRF460 an-546 motorola AN282A motorola application note AN-546 AN546 2N6368 2648A str 2652 motorola an-282a application

    BUJ106A

    Abstract: No abstract text available
    Text: Philips Sem iconductors Preliminary specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


    OCR Scan     		PDF BUJ106A O220AB 1E-06 BUJ106A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kD, R2=47kiî) Cl Tape loading orientation


    OCR Scan     		PDF Q62702-C2486 OT-363 as35b05 D15DLSB E35bD5 01EDbS4

    564 sot363

    Abstract: No abstract text available
    Text: SIEMENS BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=22k£2, R2=22k£i) Tape loading orientation


    OCR Scan     		PDF Q62702-C2375 OT-363 564 sot363

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation


    OCR Scan     		PDF 10kiJ, Q62702-C2495 OT-363

    BUT12

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/nigh frequency lighting ballast applications and converters, inverters, switching regulators,


    OCR Scan     		PDF BUT12AI T0220AB 20icon 1E-01 1E-02 BUT12

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUL44/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L 44* BUL44F* SW ITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES


    OCR Scan     		PDF BUL44/D BUL44F* BUL44/BUL44F BUL44F 221D-02 O-220

    hp2530

    Abstract: IB32 MPS-U60 MPSU60 transistor ll6 TRANSISTOR mpsu60
    Text: MOTOROLA SEMICONDUCTOR MPS-U60 TECHNICAL DATA ¡s& CON ANNULAR TRANSISTOR PNP SILICON HIGH VOLTAGE TRANSISTOR sigred for general-purpose applications requiring high breakItages, low saturation voltages and low capacitance. Com plem ent to NPN T y p e M P S -U IO


    OCR Scan     		PDF MPS-U60 hp2530 IB32 MPS-U60 MPSU60 transistor ll6 TRANSISTOR mpsu60

    2sa 940

    Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
    Text: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are


    OCR Scan     		PDF 2SC2530 35MHz 2sa 940 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu

    AT-310

    Abstract: AT-31011 AT-31033 SAI SOT23
    Text: Thal mLßm HP AE CWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data - I AT-31011 AT-31033 Features Description • High Perform ance Bipolar


    OCR Scan     		PDF AT-31011 AT-31033 AT-31011: AT-31033: OT-143 OT-143 AT-31011) OT-23 AT-31033) AT-310 SAI SOT23