CRT - COLOUR TV SCHEMATIC DIAGRAM
Abstract: CRT COLOUR TV SCHEMATIC DIAGRAM BU407FP bu407F
Text: BU407FP SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV ■ DESCRIPTION The device is a silicon epitaxial planar NPN transistor in TO-220FP fully isolated package. It is a fast switching, high voltage device for use
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BU407FP
O-220FP
O-220FP
CRT - COLOUR TV SCHEMATIC DIAGRAM
CRT COLOUR TV SCHEMATIC DIAGRAM
BU407FP
bu407F
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2N4401 transistor
Abstract: 2N4401 NPN Switching Transistor CMLT4413 2N4401 2N4403 NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount
Text: Central CMLT4413 TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY NPN/PNP SILICON TRANSISTOR SOT-563 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT4413 consists of one isolated 2N4401 NPN silicon transistor and one complementary isolated 2N4403 PNP silicon transistor,
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CMLT4413
OT-563
CMLT4413
2N4401
2N4403
150mA,
2N4401 transistor
2N4401 NPN Switching Transistor
NPN, PNP for 500ma, 30v
2n4401 configuration
2N4403 surface mount
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bfq136
Abstract: SOT122
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ136 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ136 PINNING NPN transistor in a four-lead
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BFQ136
OT122A
bfq136
SOT122
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BFQ34
Abstract: bfq34 application note FP 801
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4
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BFQ34
OT122A
BFQ34
bfq34 application note
FP 801
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BFQ34
Abstract: transistor marking N1 BFQ34/01,112
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4
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BFQ34
OT122A
BFQ34/01
BFQ34/01
OT122
BFQ34
transistor marking N1
BFQ34/01,112
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BFQ68 Applications
Abstract: BFQ68 FP 801 ZO 103 MA 75 724
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ68 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ68 PINNING NPN transistor mounted in a four-lead
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BFQ68
OT122A
BFQ68 Applications
BFQ68
FP 801
ZO 103 MA 75 724
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INTERSIL AN5296
Abstract: C - 4834 transistor an5296 AN5296 Application of the CA3018 AN5296 application note "Application of the CA3018" AN5296 Application note CA3018 Application note CA3086 CA3086 "an5296 Application of the CA3018"
Text: CA3086 General Purpose NPN Transistor Array May 2001 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN
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CA3086
120MHz
CA3086
190MHz
AN5296
CA3018
INTERSIL AN5296
C - 4834 transistor
an5296
AN5296 Application of the CA3018
AN5296 application note
"Application of the CA3018"
AN5296 Application note CA3018
Application note CA3086
"an5296 Application of the CA3018"
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an5296
Abstract: CA3086 "an5296 Application of the CA3018" "Application of the CA3018" AN5296 application note AN5296 Application note CA3018 CA3086M AN5296 Application of the CA3018 CA3018 CA3086F
Text: CA3086 General Purpose NPN Transistor Array November 1996 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN
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CA3086
120MHz
CA3086
190MHz
AN5296
CA3018
an5296
"an5296 Application of the CA3018"
"Application of the CA3018"
AN5296 application note
AN5296 Application note CA3018
CA3086M
AN5296 Application of the CA3018
CA3086F
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transistor marking 6c1
Abstract: No abstract text available
Text: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package BC846PN BC846UPN
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BC846PN/UPN
BC847PN
BC846PN
BC846UPN
EHA07177
OT363
transistor marking 6c1
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VPS05604
Abstract: No abstract text available
Text: SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 • High current gain 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated NPN/PNP Transistors in one package 2 1 3 VPS05604 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C
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3904PN
VPS05604
3904PN
Q62702-C
OT-363
EHP00757
EHP00760
VPS05604
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Untitled
Abstract: No abstract text available
Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101
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SMBT3904.
SMBT3904PN
SMBT3904UPN
EHA07177
SMBT3904PN
OT363
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SC74
Abstract: SMBT3904 SMBT3904PN SMBT3904UPN 6C TRANSISTOR MARKING
Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
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SMBT3904.
SMBT3904PN
SMBT3904UPN
EHA07177
OT363
SC74
SMBT3904
SMBT3904PN
SMBT3904UPN
6C TRANSISTOR MARKING
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creepage
Abstract: No abstract text available
Text: BUH315DFH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS HIGH VOLTAGE CAPABILITY > 1500 V FULLY MOLDED ISOLATED PACKAGE 2KV DC ISOLATION (U.L. COMPLIANT) NPN TRANSISTOR WITH INTEGRATED
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BUH315DFH
O-220
O-220FH
creepage
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Marking Package Code TF
Abstract: No abstract text available
Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101
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SMBT3904.
SMBT3904PN
SMBT3904UPN
EHA07177
SMBT3904PN
OT363
Marking Package Code TF
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BUV298V
Abstract: No abstract text available
Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:
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BUV298V
BUV298V
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Untitled
Abstract: No abstract text available
Text: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package • Pb-free (RoHS compliant) package
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BC846PN/UPN
BC847PN
BC846PN
BC846UPN
EHA07177
OT363
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Untitled
Abstract: No abstract text available
Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1
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SMBT3904.
SMBT3904PN
SMBT3904UPN
EHA07177
OT363
20may
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Untitled
Abstract: No abstract text available
Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1
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SMBT3904.
SMBT3904PN
SMBT3904UPN
EHA07177
SMBT3904UPN
SMBT3904PN
OT363
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Untitled
Abstract: No abstract text available
Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 5 2 6 • Two galvanic internal isolated NPN/PNP 1 Transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101
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SMBTA06UPN
EHA07177
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Untitled
Abstract: No abstract text available
Text: BD241CFP NPN SILICON POWER TRANSISTOR . FULLY MOLDED ISOLATED PACKAGE . 2000 V DC ISOLATION U.L. COMPLIANT APPLICATIONS . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241CFP is silicon epitaxial-base NPN transistor mounted in TO-220FP fully molded
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BD241CFP
BD241CFP
O-220FP
O-22QFP
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SILICON TRANSISTOR CORP
Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn 331 STS410 STS660 free pnp and npn transistor STS409 STS430 SDN22302 SDN22311
Text: 88D 00799 D T '3 3 -13 flfl DE |fl554D22 D D D O ? ^ =] 8254022 S I L ICON TRANSISTOR CORP S I L I C Ò T TRANSISTOR CORP VCEO SUS Polarity lc Max Am ps SDN22301 SDN22302 SDN22311 SDN22312 SDN22313 NPN NPN NPN NPN NPN 5.0 5.0 5.0 5.0 5.0 150 250 150 250 350
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flaS402E
SDN22301
SDN22302
SDN22311
SDN22312
SDN22313
SRSP4296
SRSP4297
SRSP4298
SRSP4299
SILICON TRANSISTOR CORP
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
npn 331
STS410
STS660
free pnp and npn transistor
STS409
STS430
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transistor D 2578
Abstract: BFQ34
Text: DISCRETE SEMICONDUCTORS BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Sem iconductors PHILIPS Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION
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BFQ34
transistor D 2578
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Untitled
Abstract: No abstract text available
Text: SCS-THOMSON û iRâmi©IFlis iû êS BUV298V NPN TRANSISTOR POWER MODULE . NPN TRANSISTOR . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE (2500V RMS) • EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE
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BUV298V
048JO
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Untitled
Abstract: No abstract text available
Text: SG S-TH O M SO N BUV298V [MOiglM&lieratMD NPN TRANSISTOR POWER MODULE . . . . . . . NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
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BUV298V
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