Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN TRANSISTOR ISOLATED Search Results

    NPN TRANSISTOR ISOLATED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541B01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR ISOLATED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CRT - COLOUR TV SCHEMATIC DIAGRAM

    Abstract: CRT COLOUR TV SCHEMATIC DIAGRAM BU407FP bu407F
    Text: BU407FP SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV ■ DESCRIPTION The device is a silicon epitaxial planar NPN transistor in TO-220FP fully isolated package. It is a fast switching, high voltage device for use


    Original     		PDF BU407FP O-220FP O-220FP CRT - COLOUR TV SCHEMATIC DIAGRAM CRT COLOUR TV SCHEMATIC DIAGRAM BU407FP bu407F

    2N4401 transistor

    Abstract: 2N4401 NPN Switching Transistor CMLT4413 2N4401 2N4403 NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount
    Text: Central CMLT4413 TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY NPN/PNP SILICON TRANSISTOR SOT-563 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT4413 consists of one isolated 2N4401 NPN silicon transistor and one complementary isolated 2N4403 PNP silicon transistor,


    Original     		PDF CMLT4413 OT-563 CMLT4413 2N4401 2N4403 150mA, 2N4401 transistor 2N4401 NPN Switching Transistor NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount

    bfq136

    Abstract: SOT122
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ136 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ136 PINNING NPN transistor in a four-lead


    Original     		PDF BFQ136 OT122A bfq136 SOT122

    BFQ34

    Abstract: bfq34 application note FP 801
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4


    Original     		PDF BFQ34 OT122A BFQ34 bfq34 application note FP 801

    BFQ34

    Abstract: transistor marking N1 BFQ34/01,112
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4


    Original     		PDF BFQ34 OT122A BFQ34/01 BFQ34/01 OT122 BFQ34 transistor marking N1 BFQ34/01,112

    BFQ68 Applications

    Abstract: BFQ68 FP 801 ZO 103 MA 75 724
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ68 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ68 PINNING NPN transistor mounted in a four-lead


    Original     		PDF BFQ68 OT122A BFQ68 Applications BFQ68 FP 801 ZO 103 MA 75 724

    INTERSIL AN5296

    Abstract: C - 4834 transistor an5296 AN5296 Application of the CA3018 AN5296 application note "Application of the CA3018" AN5296 Application note CA3018 Application note CA3086 CA3086 "an5296 Application of the CA3018"
    Text: CA3086 General Purpose NPN Transistor Array May 2001 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN


    Original     		PDF CA3086 120MHz CA3086 190MHz AN5296 CA3018 INTERSIL AN5296 C - 4834 transistor an5296 AN5296 Application of the CA3018 AN5296 application note "Application of the CA3018" AN5296 Application note CA3018 Application note CA3086 "an5296 Application of the CA3018"

    an5296

    Abstract: CA3086 "an5296 Application of the CA3018" "Application of the CA3018" AN5296 application note AN5296 Application note CA3018 CA3086M AN5296 Application of the CA3018 CA3018 CA3086F
    Text: CA3086 General Purpose NPN Transistor Array November 1996 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN


    Original     		PDF CA3086 120MHz CA3086 190MHz AN5296 CA3018 an5296 "an5296 Application of the CA3018" "Application of the CA3018" AN5296 application note AN5296 Application note CA3018 CA3086M AN5296 Application of the CA3018 CA3086F

    transistor marking 6c1

    Abstract: No abstract text available
    Text: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package BC846PN BC846UPN


    Original     		PDF BC846PN/UPN BC847PN BC846PN BC846UPN EHA07177 OT363 transistor marking 6c1

    VPS05604

    Abstract: No abstract text available
    Text: SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 • High current gain 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated NPN/PNP Transistors in one package 2 1 3 VPS05604 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C


    Original     		PDF 3904PN VPS05604 3904PN Q62702-C OT-363 EHP00757 EHP00760 VPS05604

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101


    Original     		PDF SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 SMBT3904PN OT363

    SC74

    Abstract: SMBT3904 SMBT3904PN SMBT3904UPN 6C TRANSISTOR MARKING
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


    Original     		PDF SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 OT363 SC74 SMBT3904 SMBT3904PN SMBT3904UPN 6C TRANSISTOR MARKING

    creepage

    Abstract: No abstract text available
    Text: BUH315DFH  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS HIGH VOLTAGE CAPABILITY > 1500 V FULLY MOLDED ISOLATED PACKAGE 2KV DC ISOLATION (U.L. COMPLIANT) NPN TRANSISTOR WITH INTEGRATED


    Original     		PDF BUH315DFH O-220 O-220FH creepage

    Marking Package Code TF

    Abstract: No abstract text available
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101


    Original     		PDF SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 SMBT3904PN OT363 Marking Package Code TF

    BUV298V

    Abstract: No abstract text available
    Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:


    Original     		PDF BUV298V BUV298V

    Untitled

    Abstract: No abstract text available
    Text: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package • Pb-free (RoHS compliant) package


    Original     		PDF BC846PN/UPN BC847PN BC846PN BC846UPN EHA07177 OT363

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1


    Original     		PDF SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 OT363 20may

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1


    Original     		PDF SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 SMBT3904UPN SMBT3904PN OT363

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 5 2 6 • Two galvanic internal isolated NPN/PNP 1 Transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101


    Original     		PDF SMBTA06UPN EHA07177

    Untitled

    Abstract: No abstract text available
    Text: BD241CFP NPN SILICON POWER TRANSISTOR . FULLY MOLDED ISOLATED PACKAGE . 2000 V DC ISOLATION U.L. COMPLIANT APPLICATIONS . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241CFP is silicon epitaxial-base NPN transistor mounted in TO-220FP fully molded


    OCR Scan     		PDF BD241CFP BD241CFP O-220FP O-22QFP

    SILICON TRANSISTOR CORP

    Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn 331 STS410 STS660 free pnp and npn transistor STS409 STS430 SDN22302 SDN22311
    Text: 88D 00799 D T '3 3 -13 flfl DE |fl554D22 D D D O ? ^ =] 8254022 S I L ICON TRANSISTOR CORP S I L I C Ò T TRANSISTOR CORP VCEO SUS Polarity lc Max Am ps SDN22301 SDN22302 SDN22311 SDN22312 SDN22313 NPN NPN NPN NPN NPN 5.0 5.0 5.0 5.0 5.0 150 250 150 250 350


    OCR Scan     		PDF flaS402E SDN22301 SDN22302 SDN22311 SDN22312 SDN22313 SRSP4296 SRSP4297 SRSP4298 SRSP4299 SILICON TRANSISTOR CORP NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn 331 STS410 STS660 free pnp and npn transistor STS409 STS430

    transistor D 2578

    Abstract: BFQ34
    Text: DISCRETE SEMICONDUCTORS BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Sem iconductors PHILIPS Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION


    OCR Scan     		PDF BFQ34 transistor D 2578

    Untitled

    Abstract: No abstract text available
    Text: SCS-THOMSON û iRâmi©IFlis iû êS BUV298V NPN TRANSISTOR POWER MODULE . NPN TRANSISTOR . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE (2500V RMS) • EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUV298V 048JO

    Untitled

    Abstract: No abstract text available
    Text: SG S-TH O M SO N BUV298V [MOiglM&lieratMD NPN TRANSISTOR POWER MODULE . . . . . . . NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUV298V