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    NPN TRANSISTOR CHARACTERISTICS BD139 Search Results

    NPN TRANSISTOR CHARACTERISTICS BD139 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR CHARACTERISTICS BD139 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power transistor bd139

    Abstract: BD139 transistor power transistor bd135 TRANSISTOR BD139 BD135 TRANSISTOR NPN BD139 power transistor bd137 transistor bd137 BD139 BD137
    Text: BD135/137/139 BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current ICM: 1.5 A Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃


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    PDF BD135/137/139 BD135/BD137/BD139 O-126 BD135 BD137 BD139 power transistor bd139 BD139 transistor power transistor bd135 TRANSISTOR BD139 BD135 TRANSISTOR NPN BD139 power transistor bd137 transistor bd137 BD139 BD137

    BD139G

    Abstract: BD139L BD139 NPN TRANSISTOR NPN BD139 power transistor bd139 BD139 BD139 NPN transistor MAX15A BD139 N TRANSISTOR BD139
    Text: UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS „ FEATURES 1 * High current max.1.5A * Low voltage (max.80V) TO-251 1 TO-126 Lead-free: BD139L Halogen-free: BD139G „ ORDERING INFORMATION Normal BD139-T60-K BD139-TM3-T


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    PDF BD139 O-251 O-126 BD139L BD139G BD139-T60-K BD139-TM3-T BD139L-T60-K BD139L-TM3-T BD139G-T60-K BD139G BD139L BD139 NPN TRANSISTOR NPN BD139 power transistor bd139 BD139 BD139 NPN transistor MAX15A BD139 N TRANSISTOR BD139

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS  FEATURES 1 * High current max.1.5A * Low voltage (max.80V) TO-251 1 TO-126  ORDERING INFORMATION Ordering Number Lead Free Halogen Free BD139L-xx-T60-K BD139G-xx-T60-K


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    PDF BD139 O-251 O-126 BD139L-xx-T60-K BD139G-xx-T60-K BD139L-xx-TM3-T BD139G-xx-TM3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS  FEATURES 1 * High current max.1.5A * Low voltage (max.80V) TO-251 1 TO-126  ORDERING INFORMATION Ordering Number Lead Free Halogen Free BD139L-xx-T60-K BD139G-xx-T60-K


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    PDF BD139 O-251 O-126 BD139L-xx-T60-K BD139G-xx-T60-K BD139L-xx-TM3-T BD139G-xx-TM3-T

    BD139 application

    Abstract: BD139 NPN transistor TRANSISTOR NPN BD139 BD139 BD139 NPN hFE-120 npn
    Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS


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    PDF BD139 O-251 QW-R213-010 BD139 application BD139 NPN transistor TRANSISTOR NPN BD139 BD139 BD139 NPN hFE-120 npn

    Untitled

    Abstract: No abstract text available
    Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS


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    PDF BD139 O-126 BD139-10 BD139-16 150mA 500mA 150mA, 100MHz QW-R204-007

    Untitled

    Abstract: No abstract text available
    Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS


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    PDF BD139 O-251 150mA 500mA 150mA, 100MHz QW-R213-010

    bd139 application note

    Abstract: BD139 NPN BD139 application
    Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS


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    PDF BD139 O-126 Tmb70 QW-R204-007 bd139 application note BD139 NPN BD139 application

    bd139

    Abstract: bd137 bd135 power transistor bd139 transistor bd137 BD139 amplifier BD139 NPN transistor power transistor bd137 TRANSISTOR NPN BD139 bd137 Transistor
    Text: BD135 BD137 BD139 NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MARKING: FULL PART NUMBER


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    PDF BD135 BD137 BD139 BD135, BD137, O-126 Tmb70 power transistor bd139 transistor bd137 BD139 amplifier BD139 NPN transistor power transistor bd137 TRANSISTOR NPN BD139 bd137 Transistor

    transistor bd137

    Abstract: BD139 BD139 NPN power transistor bd135 power transistor bd137 BD135 NPN transistor BD139 NPN transistor power transistor bd139 BD139 TRANSISTOR to-126 transistor
    Text: BD135/BD137/BD139 NPN TO-126 Transistor TO-126 2.500 1.100 2.900 1.500 7.400 7.800 1. EMITTER 3.900 4.100 3.000 3.200 2. COLLECTOR 10.60 0 11.00 0 0.000 0.300 3. BASE 2.100 2.300 3 2 Features 1.170 1.370 1 — High Current(1.5A) — Low Voltage(80V) 15.30 0


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    PDF BD135/BD137/BD139 O-126 O-126 BD135 BD137 BD139 transistor bd137 BD139 NPN power transistor bd135 power transistor bd137 BD135 NPN transistor BD139 NPN transistor power transistor bd139 BD139 TRANSISTOR to-126 transistor

    BD139

    Abstract: BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 BD135 BD140 npn TRANSISTOR NPN BD140 of ic BD140
    Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed


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    PDF BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 BD140 npn TRANSISTOR NPN BD140 of ic BD140

    BD135

    Abstract: power transistor bd139 power transistor bd135 transistor bd137 power transistor bd137 BD139 NPN transistor BD137 BD139 TRANSISTOR NPN BD139 NPN POWER transistor BD135
    Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD135 : BD137 : BD139 Collector Emitter Voltage : BD135


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    PDF BD135/137/139 O-126 BD136, BD138 BD140 BD135 BD137 BD139 BD135 power transistor bd139 power transistor bd135 transistor bd137 power transistor bd137 BD139 NPN transistor BD137 BD139 TRANSISTOR NPN BD139 NPN POWER transistor BD135

    BD139 MOTOROLA

    Abstract: BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135
    Text: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc


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    PDF BD135/D* BD135/D BD139 MOTOROLA BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135

    BD135

    Abstract: BD135 BD137 BD139
    Text: BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 2Collector 3Base CLASSIFICATION OF hFE 1


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    PDF BD135 BD137 BD139 O-126 BD136, BD138 BD140 BD135-6 BD135-10 BD135-16 BD135 BD137 BD139

    BD139

    Abstract: BD139-10 bd140-10
    Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed


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    PDF BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD139-10 bd140-10

    power transistor bd139

    Abstract: BD139 transistor BD139 amplifier power transistor bd137 transistor bd137 TRANSISTOR BD139 TRANSISTOR NPN BD139 BD139 power transistor bd135 BD139 NPN transistor download datasheet
    Text: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: TC=25°C unless otherwise noted


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    PDF BD135 BD137 BD139 O-126 BD135, BD137, BD139 CHARACTERISTI10 power transistor bd139 BD139 transistor BD139 amplifier power transistor bd137 transistor bd137 TRANSISTOR BD139 TRANSISTOR NPN BD139 power transistor bd135 BD139 NPN transistor download datasheet

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: TC=25°C unless otherwise noted


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    PDF BD135 BD137 BD139 O-126 BD135, BD137, BD139 BD135-10

    transistor BD139 N

    Abstract: power transistor bd139 BD139 amplifier BD139 BD139 N TRANSISTOR NPN BD139 BD137-16 to126 case BD135-10 BD137-10
    Text: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: TC=25°C unless otherwise noted


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    PDF BD135 BD137 BD139 O-126 BD135, BD137, BD139 Tmb70 transistor BD139 N power transistor bd139 BD139 amplifier BD139 N TRANSISTOR NPN BD139 BD137-16 to126 case BD135-10 BD137-10

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


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    PDF O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS

    transistor BD 139

    Abstract: transistor BD 137 BD 139 transistor 10 watt power transistor bd transistor BD 135 bd139 BD transistor BD 139 BD 135 BD135
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio am plifiers and drivers utilizing complementary o r quasi com plementary circuits. • • DC Current Gain — hpE = 40 Min @ l c = 0.15 Adc


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    PDF BD135 BD137 BD139 transistor BD 139 transistor BD 137 BD 139 transistor 10 watt power transistor bd transistor BD 135 bd139 BD transistor BD 139 BD 135

    BDI35

    Abstract: BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139
    Text: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpE = 40 Min @ Iq = 0.15 Adc


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    PDF BD135/D BD135 BD137 BD139 O-225AA BDI35 BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139

    BD139

    Abstract: power transistor bd135 BD136 bd139 Complement BD135
    Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage : BD135 : BD137 : BD139 C o lle cto r E m itter Voltage: BD135


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    PDF BD135/137/139 BD136, BD138 BD140 BD135 BD137 BD139 power transistor bd135 BD136 bd139 Complement BD135

    BD139 N

    Abstract: TRANSISTOR TC 137 BD135 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139
    Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Base Voltage :B D 1 3 5 : BD137 : BD139 C ollector E m itter V o lta g e : BD135


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    PDF BD135/137/139 BD136, BD138 BD140 BD135 BD137 BD139 BD139 N TRANSISTOR TC 137 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139

    BD139

    Abstract: BD137 philips power transistor bd139 BD135-BD137-BD139 BD139 philips BD139 PIN DATA BD137-10 BD135-10 BD139 circuits BD135-16
    Text: Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES PINNING • High current max. 1.5 A PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base DESCRIPTION APPLICATIONS


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    PDF BD135; BD137; BD139 O-126; BD136, BD138 BD140. BD135 BD137 BD139 philips power transistor bd139 BD135-BD137-BD139 BD139 philips BD139 PIN DATA BD137-10 BD135-10 BD139 circuits BD135-16