NPN TRANSISTOR CHARACTERISTICS BD136 Search Results

NPN TRANSISTOR CHARACTERISTICS BD136 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

NPN TRANSISTOR CHARACTERISTICS BD136 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BD135 Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics	Original	MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727	PDF
QBD135 Abstract: bd139 bd135 to-126 BD13916S to-126 transistor Cross-Reference DATE transistor cross reference TO-126 fairchild bd139 cross reference transistor A 1263 Text: BD135/137/139 BD135/137/139 Medium Power Linear and Switching Applications • Complement to BD136, BD138 and BD140 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	BD135/137/139 BD136, BD138 BD140 O-126 BD135 BD137 BD139 QBD135 bd139 bd135 to-126 BD13916S to-126 transistor Cross-Reference DATE transistor cross reference TO-126 fairchild bd139 cross reference transistor A 1263	PDF
BD139 Abstract: BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 BD135 BD140 npn TRANSISTOR NPN BD140 of ic BD140 Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed	Original	BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 BD140 npn TRANSISTOR NPN BD140 of ic BD140	PDF
BD135 Abstract: power transistor bd139 power transistor bd135 transistor bd137 power transistor bd137 BD139 NPN transistor BD137 BD139 TRANSISTOR NPN BD139 NPN POWER transistor BD135 Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD135 : BD137 : BD139 Collector Emitter Voltage : BD135	Original	BD135/137/139 O-126 BD136, BD138 BD140 BD135 BD137 BD139 BD135 power transistor bd139 power transistor bd135 transistor bd137 power transistor bd137 BD139 NPN transistor BD137 BD139 TRANSISTOR NPN BD139 NPN POWER transistor BD135	PDF
BD139 Abstract: power transistor bd135 BD136 bd139 Complement BD135 Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage : BD135 : BD137 : BD139 C o lle cto r E m itter Voltage: BD135	OCR Scan	BD135/137/139 BD136, BD138 BD140 BD135 BD137 BD139 power transistor bd135 BD136 bd139 Complement BD135	PDF
BD135 Abstract: BD135 BD137 BD139 Text: BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 2Collector 3Base CLASSIFICATION OF hFE 1	Original	BD135 BD137 BD139 O-126 BD136, BD138 BD140 BD135-6 BD135-10 BD135-16 BD135 BD137 BD139	PDF
BD135 CURVES Abstract: BD140 application circuits circuits BD139 BD139 application TRANSISTOR NPN BD140 BD140 TRANSISTOR NPN BD139 transistor BD135 BD136 bd139 bd140 Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed	Original	BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD135 CURVES BD140 application circuits circuits BD139 application TRANSISTOR NPN BD140 BD140 TRANSISTOR NPN BD139 transistor BD135 BD136 bd139 bd140	PDF
transistor BD 246 Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments Text: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A	OCR Scan	BD135 BD136 STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments	PDF
BD139 Abstract: BD139-10 bd140-10 Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed	Original	BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD139-10 bd140-10	PDF
Untitled Abstract: No abstract text available Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137	OCR Scan	BD135/137/139 BD136, BD140 BD135 BD137 BD139	PDF
BD139 N Abstract: TRANSISTOR TC 137 BD135 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139 Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Base Voltage :B D 1 3 5 : BD137 : BD139 C ollector E m itter V o lta g e : BD135	OCR Scan	BD135/137/139 BD136, BD138 BD140 BD135 BD137 BD139 BD139 N TRANSISTOR TC 137 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139	PDF
Untitled Abstract: No abstract text available Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD136/138/140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 BD136 BD138 BD140	PDF
BD140 pnp transistor Abstract: TRANSISTOR NPN BD140 BD136 BD140 npn TRANSISTOR PNP BD140 BD140 transistor bd138 TRANSISTOR BD140 BD138 BD140 circuits Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD136/138/140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 BD136 BD138 BD140 BD140 pnp transistor TRANSISTOR NPN BD140 BD136 BD140 npn TRANSISTOR PNP BD140 BD140 transistor bd138 TRANSISTOR BD140 BD138 BD140 circuits	PDF
BD139 Abstract: BD136 of ic BD140 BD140 pnp transistor transistor bd136 BD138 BD140 of transistor BD140 OF TRANSISTOR bd138 transistor BD138 Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD136/138/140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 BD136 BD138 BD140 BD139 BD136 of ic BD140 BD140 pnp transistor transistor bd136 BD138 BD140 of transistor BD140 OF TRANSISTOR bd138 transistor BD138	PDF

transistor BD140 Abstract: power transistor bd136 to126 case transistor bd136 Text: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  1 DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD136-138-140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 O-126C BD136L-x-T60-K BD136G-x-T60-K BD136L-x-TM3-T transistor BD140 power transistor bd136 to126 case transistor bd136	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  DESCRIPTION 1 The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD136-138-140 BD136/BD138/BD140 BD135/BD137/ BD139. O-251 OT-223 O-126 O-126C BD136L-xx-T60-K BD136G-xx-T60-K	PDF
BD138G Abstract: BD136 BD136 pin bd135 to-126 BD139 PIN DATA power transistor bd136 QW-R204-013 NPN Transistor Characteristics bd136 BD140l Text: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD136-138-140 O-251 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 O-126 O-251 BD138G BD136 BD136 pin bd135 to-126 BD139 PIN DATA power transistor bd136 QW-R204-013 NPN Transistor Characteristics bd136 BD140l	PDF
TRANSISTOR D 1978 Abstract: BD135 BD136 BUX84 Text: BUX84 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C AUGUST 1978 - REVISED MARCH 1997 TO-220 PACKAGE	Original	BUX84 O-220 TRANSISTOR D 1978 BD135 BD136 BUX84	PDF
D137 transistor Abstract: D135 BD139B BD139 bd137b BD136 Text: BD135/137/139 NPN EPITAXIAL SILICO N TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136, B D 138 and B D 140 respectively ABSO LUTE MAXIMUM RATINGS Symbol Characteristic Collector B ase Voltage Collector Emitter Voltage	OCR Scan	BD135/137/139 O-126 BD136, 150mA 500mA, D137 transistor D135 BD139B BD139 bd137b BD136	PDF
transistor BD139 N Abstract: BD135-BD137-BD139 Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector Base Voltage S ym bol : BD135 R a tin g U n it	OCR Scan	BD135/137/139 BD136, BD138 BD140 BD137 BD139 BD135 transistor BD139 N BD135-BD137-BD139	PDF
BD135 Abstract: BD136 BUX85 Text: BUX85 NPN SILICON POWER TRANSISTOR ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.	Original	BUX85 O-220 BD135 BD136 BUX85	PDF
BD135 Abstract: BD136 BUX84 TRANSISTOR D 1978 Text: BUX84 NPN SILICON POWER TRANSISTOR ● ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current B 1 ● Typical tf = 200 ns at 25°C C 2 E 3 TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base.	Original	BUX84 O-220 BD135 BD136 BUX84 TRANSISTOR D 1978	PDF
BD136 Abstract: BD135 BUX85 transistor bd135 Text: BUX85 NPN SILICON POWER TRANSISTOR ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.	Original	BUX85 O-220 TCP741AL BD136 BD135 BUX85 transistor bd135	PDF
Untitled Abstract: No abstract text available Text: BUX84 NPN SILICON POWER TRANSISTOR 40 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 2 A Continuous Collector Current 3 A Peak Collector Current B 1 Typical tf = 200 ns at 25°C C 2 E 3 This series is currently available, but not recommended for new designs.	Original	BUX84 O-220 TCP741AL	PDF

NPN TRANSISTOR CHARACTERISTICS BD136 Search Results

NPN TRANSISTOR CHARACTERISTICS BD136 Result Highlights (5)

NPN TRANSISTOR CHARACTERISTICS BD136 Datasheets Context Search

BD135

QBD135

BD139

BD135

BD139

BD135

BD135 CURVES

transistor BD 246

BD139

Untitled

BD139 N

Untitled

BD140 pnp transistor

BD139

transistor BD140

Untitled

BD138G

TRANSISTOR D 1978

D137 transistor

transistor BD139 N

BD135

BD135

BD136

Untitled