Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN TRANSISTOR 5A 400V Search Results

    NPN TRANSISTOR 5A 400V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 5A 400V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EE16

    Abstract: 5A transistor 2SD826 DC-DC EE13 ITR09924 core EE16 60309E EE16 9V transistor C 5386 EE16 case
    Text: 2SD826 Ordering number : EN538F SANYO Semiconductors DATA SHEET 2SD826 NPN Epitaxial Planar Silicon Transistor 20V / 5A, Transistor for Flash Circuit Features • • • Low saturation voltage. High hFE. Large current capacity. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		2SD826 EN538F 100ms, 150se. EE16 5A transistor 2SD826 DC-DC EE13 ITR09924 core EE16 60309E EE16 9V transistor C 5386 EE16 case PDF

    equivalent bu806

    Abstract: bu806 equivalent BU806
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High Voltage: VCEV= 400V Min ·Low Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and


    Original     		100mA equivalent bu806 bu806 equivalent BU806 PDF

    250V transistor npn 2a

    Abstract: NPN Transistor 1A 400V npn transistors 400V 1A Saturation BU926 BU92
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU926 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min) ·Low Saturation Voltage : VCE(sat)= 1.5V (Max)@IC= 5A APPLICATIONS ·Designed for use in high-voltage , high-speed , power


    Original     		BU926 250V transistor npn 2a NPN Transistor 1A 400V npn transistors 400V 1A Saturation BU926 BU92 PDF

    transistor BU406

    Abstract: 400V 100MA NPN npn transistor 400V Transistor Transistor Power Horizontal NPN Transistor 5A 400V BU406 400V switching transistor crt horizontal deflection circuit transistor for horizontal deflection output NPN Power Transistor 5A 400V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU406 DESCRIPTION •High Voltage: VCEV= 400V Min ·Fast Switching Speed: tf= 750ns(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages


    Original     		BU406 750ns 20MHz transistor BU406 400V 100MA NPN npn transistor 400V Transistor Transistor Power Horizontal NPN Transistor 5A 400V BU406 400V switching transistor crt horizontal deflection circuit transistor for horizontal deflection output NPN Power Transistor 5A 400V PDF

    BU180A

    Abstract: darlington Vce-200V NPN DARLINGTON 10A 400V NPN Transistor 10A 400V npn transistor 400V npn darlington 400v 10a darlington power transistor 10a Darlington NPN Silicon Diode darlington power transistor npn DARLINGTON 10A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector Current -IC= 10A ·DC Current Gain: hFE= 200 Min @ IC= 5A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for line operated switchmode applications


    Original     		BU180A 100mA BU180A darlington Vce-200V NPN DARLINGTON 10A 400V NPN Transistor 10A 400V npn transistor 400V npn darlington 400v 10a darlington power transistor 10a Darlington NPN Silicon Diode darlington power transistor npn DARLINGTON 10A PDF

    pin diagram of ic 4440

    Abstract: IC 0116 DC TSC5305D TSC5305DCM TSC5305DCZ ic 4440 transistor Vceo 400V, Vebo 9v, Ic 10A
    Text: Preliminary TSC5305D High Voltage NPN Transistor with Diode TO-263 Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 5A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti


    Original     		TSC5305D O-263 TSC5305DCZ O-220 TSC5305DCM O-220 O-263 TS5305D pin diagram of ic 4440 IC 0116 DC TSC5305D TSC5305DCM TSC5305DCZ ic 4440 transistor Vceo 400V, Vebo 9v, Ic 10A PDF

    EE16

    Abstract: sanyo ni-cd ee-16 core EE16 pulse trans EE16 9V EE16 4 3 EE16 5V
    Text: Ordering number:ENN538E NPN Epitaxial Planar Silicon Transistor 2SD826 20V/5A Switching Applications Features Package Dimensions • Low saturation voltage. · High hFE. · Large current capacity. unit:mm 2009B [2SD826] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6


    Original     		ENN538E 2SD826 2009B 2SD826] 100ms, O-126 150ctric EE16 sanyo ni-cd ee-16 core EE16 pulse trans EE16 9V EE16 4 3 EE16 5V PDF

    2SC3306

    Abstract: TR10S
    Text: TOSHIBA 2SC3306 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3306 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Excellent Switching Times : tr =1.0/^s Max. , tf^l.O/^s (Max.) (1(2 = 5A)


    OCR Scan     		2SC3306 WIDTH-20//S 2SC3306 TR10S PDF

    transistor BU406

    Abstract: bu406d BU406 7A60W
    Text: HORIZONTAL DEFLECTION TRANSISTOR NPN BU406/D, 7A 60W Technical Data … for Horizontal deflection output stages of TV’s and CRT’s. F Collector-Emitter Voltage-VCEV=400Vdc F Low Saturation Voltage:VCE sat =1V(max)@5A F TO-220 Package F Fast Switching Speed:tf=750 ns(max)


    Original     		BU406/D, 400Vdc O-220 BU406D 10Vdc 40Vdc transistor BU406 BU406 7A60W PDF

    1348 transistor

    Abstract: TRANSISTOR K 1507 POWER TRANSISTOR TO-220 marking A07 ITO-220 TSC148D TSC148DCI TSC148DCZ Transistor 1507 Transistor 1308
    Text: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 1.5V @ IC / IB = 5A / 1A Block Diagram ● High Voltage Capability ● Very High Speed Switching


    Original     		TSC148D O-220 ITO-220 TSC148DCZ TSC148DCI 50pcs 1348 transistor TRANSISTOR K 1507 POWER TRANSISTOR TO-220 marking A07 ITO-220 TSC148D Transistor 1507 Transistor 1308 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSC742 High Voltage NPN Transistor TO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 420V BVCBO 1050V IC VCE SAT Features 5A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability ● High Switching Speed Structure ●


    Original     		TSC742 O-220 TSC742CZ 50pcs PDF

    Untitled

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP152 Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage« : V(BR)CEO= 400V(Min.) • Collector-Emitter Saturation Voltage: VCE(sat)= 2.0V(Max.)@ lc= 5A


    Original     		TIP152 O-220C 100mA 250mA PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5352 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE i <;r * 3 < 51 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • • Excellent Switching Times : tr = 0.5^s Max. , tf=0.3,ys (Max.) (Ic = 5A)


    OCR Scan     		2SC5352 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 5A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability


    Original     		TSC5804D O-251 O-252 TSC5804DCH TSC5804DCP 75pcs PDF

    2SC3306

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3306 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3306 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. U nit in mm .2 ± 0.2 15-9MAX HIGH SPEED DC-DC CONVERTER APPLICATIONS. if • Excellent Switching Times : tr = 1.0/^s Max. , tf=1.0/^s (Max.) (Ic = 5A)


    OCR Scan     		2SC3306 15-9MAX 2SC3306 PDF

    TRANSISTOR K 1507

    Abstract: 1348 transistor TRANSISTOR D 1785 silicon power diode to263 3A fast-switching diode HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a marking code 0632 Transistor 1507 POWER TRANSISTOR TO-220
    Text: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263 2 D PAK PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 8A 1.5V @ IC / IB = 5A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original     		TSC148D O-220 ITO-220 O-263 TSC148DCZ TSC148DCI TSC148DCM O-263 TRANSISTOR K 1507 1348 transistor TRANSISTOR D 1785 silicon power diode to263 3A fast-switching diode HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a marking code 0632 Transistor 1507 POWER TRANSISTOR TO-220 PDF

    2SC2792

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2792 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC2792 INDUSTRIAL APPLICATIONS SW ITCHING REGULATOR A N D HIGH VOLTAGE SW ITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Excellent Switching Times Iq = 0.-5A. tr = 1.0/« s Max. tf= 1.0/iS Max.


    OCR Scan     		2SC2792 961001EAA2' 2SC2792 PDF

    2SC3425

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3425 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC3425 Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS 8.3 M A X . • • h- Excellent Switching Times : tr = l.u/^s (Max.), tf^i.S/^s (Max.) at Ie = u.5A


    OCR Scan     		2SC3425 2SC3425 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263-2L 2 D PAK PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 8A 1.5V @ IC / IB = 5A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original     		TSC148D O-220 ITO-220 O-263-2L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3306 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3306 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. U nit in mm 15 .9 M A X . 43.2 + 0.2 HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Excellent Switching Times : tr = 1 .0 ^ s (Max. , tf= 1.0,as (Max.) (Ic = 5A)


    OCR Scan     		2SC3306 PDF

    2SC3306

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3306 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3306 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm 43.2 ± 0.2 15.9M AX. HIGH SPEED DC-DC CONVERTER APPLICATIONS. eÆ • Excellent Switching Times : tr =1.0/^s Max.f, tf^l.O/^s (Max. (Ic = 5A)


    OCR Scan     		2SC3306 2SC3306 PDF

    NPN MARKING 2A

    Abstract: transistor marking 2a NPN Transistor 1A 400V IC 0116 DC TS13007B NPN transistor for switching applications, 400V TS13007BCZ
    Text: TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 3V @ IC / IB = 8A / 2A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original     		TS13007B O-220 50pcs TS13007BCZ NPN MARKING 2A transistor marking 2a NPN Transistor 1A 400V IC 0116 DC TS13007B NPN transistor for switching applications, 400V PDF

    IC 0116 DC

    Abstract: NPN Transistor 8A transistor b 40 Ic-5A datasheet npn switching transistor Ic 5A marking A07 marking code IC 4A transistor npn 2a switching applications TS13007B TS13007BCZ transistor 2a h
    Text: TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 3V @ IC / IB = 8A / 2A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original     		TS13007B O-220 TS13007BCZ 50pcs IC 0116 DC NPN Transistor 8A transistor b 40 Ic-5A datasheet npn switching transistor Ic 5A marking A07 marking code IC 4A transistor npn 2a switching applications TS13007B transistor 2a h PDF

    NPN transistor for switching applications, 400V

    Abstract: TS13009CZ marking code IC 8A transistor 400v 8a to220 IC 0116 DC TS13009 "NPN Transistor"
    Text: TS13009 High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 12A VCE SAT Features 1.5V @ IC / IB = 12A / 3A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original     		TS13009 O-220 50pcs TS13009CZ NPN transistor for switching applications, 400V marking code IC 8A transistor 400v 8a to220 IC 0116 DC TS13009 "NPN Transistor" PDF