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    NPN TRANSISTOR 450V 1A Search Results

    NPN TRANSISTOR 450V 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 450V 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green APT13005 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 4A high Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2


    Original     		PDF APT13005 O220F-3, O220AB MIL-STD-202, O220F-3: 1500mg 2000mg DS36308

    NTE397

    Abstract: transistor NTE396 NTE396
    Text: NTE396 Silicon NPN Transistor Power Amplifier & High Speed Switch Compl to NTE397 Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V


    Original     		PDF NTE396 NTE397) 50MHz NTE397 transistor NTE396 NTE396

    13003D

    Abstract: No abstract text available
    Text: DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 450V • • • BVCES > 700V BVEBO > 9V • • IC = 1.5A high Continuous Collector Current • • Integrated Collector-Emitter Diode to act as free-wheeling diode


    Original     		PDF DXT13003DG OT223 J-STD-020 MIL-STD-202, DS37262 13003D

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green APT13003S 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 1.3A High Continuous Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2


    Original     		PDF APT13003S MIL-STD-202, 200mg 400mg DS36307

    GU13005S

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green APT13005S 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 3.2A high Continuous Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2


    Original     		PDF APT13005S O220F-3 MIL-STD-202, 400mg 340mg O220F-3: 1500mg DS36309 GU13005S

    APT13005DI-G1

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green APT13005D 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V    IC = 4A High Collector Current Integrated Anti-Parallel Diode to act as free-wheeling diode


    Original     		PDF APT13005D O220F-3, O220AB MIL-STD-202, O220F-3: 340acknowledge DS36463 APT13005DI-G1

    13003D

    Abstract: br 13003d transistor 13003d br+13003d
    Text: DXT13003DK 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data • BVCEO > 450V • • BVCES > 700V • Case Material: Molded Plastic, "Green" Molding Compound • BVEBO > 9V • • • IC = 1.5A high Continuous Collector Current Integrated Anti-Parallel Diode to act as free-wheeling diode


    Original     		PDF DXT13003DK J-STD-020 MIL-STD-202, DS37297 13003D br 13003d transistor 13003d br+13003d

    13003D

    Abstract: transistor 13003d NPN transistor 13003D transistor br 13003d br 13003d
    Text: A Product Line of Diodes Incorporated Green APT13003D 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data •          BVCEO > 450V BVCES > 700V BVEBO > 9V IC = 1.5A high Continuous Collector Current Integrated Collector-Emitter Diode to act as free-wheeling diode


    Original     		PDF APT13003D MIL-STD-202, 200mg 400mg DS36347 13003D transistor 13003d NPN transistor 13003D transistor br 13003d br 13003d

    NPN Transistor 450v 1A

    Abstract: MJ12021
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ12021 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·Fast Turn-Off Time APPLICATIONS ·Designed for high resolution video systems, such as : high


    Original     		PDF MJ12021 NPN Transistor 450v 1A MJ12021

    MJH16008

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJH16008 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in


    Original     		PDF MJH16008 MJH16008

    BUW133H

    Abstract: NPN Transistor 450v 1A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW133H DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 450V APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.


    Original     		PDF BUW133H BUW133H NPN Transistor 450v 1A

    KSC5338

    Abstract: 2a 125v transistor Ic 1A datasheet NPN transistor 800V 1A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5338 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 450V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose


    Original     		PDF KSC5338 KSC5338 2a 125v transistor Ic 1A datasheet NPN transistor 800V 1A

    high voltage fast switching npn transistor

    Abstract: NPN Transistor 450v 1A BUX47A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX47A DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V (Min) ·Fast Switching Speed APPLICATIONS Designed for high voltage, fast switching applications. Absolute maximum ratings(Ta=25℃)


    Original     		PDF BUX47A high voltage fast switching npn transistor NPN Transistor 450v 1A BUX47A

    transistor VCE 1000V

    Abstract: NPN Transistor VCEO 1000V 220v 2a transistor NPN Transistor 450v 1A IC 1A datasheet transistor 1000V transistor Ic 1A datasheet NPN SGSF313PI 1000v, NPN SGSF31
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313PI DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line


    Original     		PDF SGSF313PI transistor VCE 1000V NPN Transistor VCEO 1000V 220v 2a transistor NPN Transistor 450v 1A IC 1A datasheet transistor 1000V transistor Ic 1A datasheet NPN SGSF313PI 1000v, NPN SGSF31

    Untitled

    Abstract: No abstract text available
    Text: , LJna. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 FAX: (973) 376-8960 U.SA MJ16016 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEOOUS) = 450V(Min) • High Switching Speed APPLICATIONS


    Original     		PDF MJ16016

    NPN Transistor VCEO 1000V

    Abstract: 220v 2a transistor transistor VCE 1000V transistor Ic 1A datasheet NPN 250V transistor npn 2a 1000v, NPN IC 1A datasheet transistor 1000V SGSF313 transistor VCEO 1000V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line


    Original     		PDF SGSF313 NPN Transistor VCEO 1000V 220v 2a transistor transistor VCE 1000V transistor Ic 1A datasheet NPN 250V transistor npn 2a 1000v, NPN IC 1A datasheet transistor 1000V SGSF313 transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 5A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability


    Original     		PDF TSC5804D O-251 O-252 TSC5804DCH TSC5804DCP 75pcs

    Untitled

    Abstract: No abstract text available
    Text: , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUX47A Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VcEoisusr 450V (Min) • Fast Switching Speed APPLICATIONS


    Original     		PDF BUX47A

    Untitled

    Abstract: No abstract text available
    Text: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original     		PDF TS13003A O-126 TS13003ACK 50pcs

    NPN Transistor 450v 1A To-92

    Abstract: No abstract text available
    Text: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original     		PDF TS13003A O-126 TS13003ACK NPN Transistor 450v 1A To-92

    Transistor A14

    Abstract: No abstract text available
    Text: TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2.5A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability


    Original     		PDF TSC5802D O-251 O-252 TSC5802DCH TSC5802DCP 75pcs Transistor A14

    A13 MARKING CODE

    Abstract: transistor a13 MARKING a13 TSC5802DCP A13 transistor a13 marking transistor diode MARKING CODE a13
    Text: TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability


    Original     		PDF TSC5802D O-251 O-252 TSC5802DCH TSC5802DCP O-251 75pcs A13 MARKING CODE transistor a13 MARKING a13 A13 transistor a13 marking transistor diode MARKING CODE a13

    2N6580

    Abstract: 2N6583 2N6581 OTC433C OTC4830 OTC483Q SVT400-3 SVT400-5
    Text: OPTEK TECHNOLOGY INC MAE D • aCJDlBflS blS ■ Product Bulletin OHC4830 August 1990 OTK W NPN Power Switching Transistor Die .O P T E K -r-35-\°\ Type OTC483Q 450V, 5A Applications • • • • • Switching Regulators PWM Inverters Motor Controls


    OCR Scan     		PDF OHC4830 OTC4830 OTC433C) 4830-400L 4830-400H OTC483Q 2N6580, 2N6581, 2N6583, SVT400-3, 2N6580 2N6583 2N6581 OTC433C SVT400-3 SVT400-5

    2N6580

    Abstract: 2N6583 2N6581 OTC4330 OTC4830 OTC483Q SVT400-3
    Text: OPTEK TECHNOLOGY INC MAE D • 1,7=15560 0 0 0 1 3 6 5 b ia ■ Product Bulletin OHC4830 August 1990 OTK i^ lj,P ° T E K NPN Power Switching Transistor Die -r-ss-w Type OTC4830 450V, 5A Applications • • • • • Switching Regulators PWM Inverters Motor Controls


    OCR Scan     		PDF 13flS OHC4830 OTC483Q OTC4330 OTC4830 2N6580, 2N6581, 2N6583, SVT400-3, SVT400-5 2N6580 2N6583 2N6581 OTC4330 SVT400-3