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    NPN TRANSISTOR 2N4400 Search Results

    NPN TRANSISTOR 2N4400 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 2N4400 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N4401 NPN Switching Transistor

    Abstract: 2N4400 2N4401 2n4401 amplifier 2N4401 transistor 100MHZ NPN TRANSISTORS NPN transistor 2n4400
    Text: Small Signal General Purpose Transistors NPN 2N4400/2N4401 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: TO-92 TO-92, Plastic Package


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    2N4400/2N4401 MIL-STD-202G, 2N4401 2N4400 2N4401 NPN Switching Transistor 2N4400 2N4401 2n4401 amplifier 2N4401 transistor 100MHZ NPN TRANSISTORS NPN transistor 2n4400 PDF

    2N4400

    Abstract: 2n4401 amplifier 2N4401 transistor 2N4400 2N4401 NPN transistor 2n4400 2N4401
    Text: Small Signal General Purpose Transistors NPN 2N4400/2N4401 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications • RoHS Compliance TO-92 Mechanical Data Case: TO-92, Plastic Package


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    2N4400/2N4401 MIL-STD-202G, 2N4400 2N4401 2n4401 amplifier 2N4401 transistor 2N4400 2N4401 NPN transistor 2n4400 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


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    2N4400 2N4401 625mW 150mA 500mA 100MHz 100MHz, 150mA, PDF

    2n4401

    Abstract: 2N4400 st2n4401
    Text: ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


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    2N4400 2N4401 625mW 100MHz 100MHz, 150mA, 2n4401 st2n4401 PDF

    st2n4401

    Abstract: 2N4401 2N4400 ic CD4081 pin diagram datasheet 2n4401 s
    Text: ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


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    2N4400 2N4401 625mW 100MHz 100MHz, 150mA, st2n4401 2N4401 ic CD4081 pin diagram datasheet 2n4401 s PDF

    2N4401

    Abstract: 2N4400 2N4400 2N4401 st2n4401 2N4401 - TRANSISTOR transistor 2n4401 equivalent ST 024 NPN transistor 2n4400
    Text: ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40 V Collector Dissipation: PC max = 625 mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


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    2N4400 2N4401 Sino-N4400 2N4400 2N4401 2N4400 2N4401 st2n4401 2N4401 - TRANSISTOR transistor 2n4401 equivalent ST 024 NPN transistor 2n4400 PDF

    2N4401

    Abstract: 2N4400 Transistor 2N4401 st2n4401 transistor 2n4401 equivalent 2N4400 2N4401 2n4401 data sheet 2N4401 TO-92 2N4400 datasheet transistor equivalents for 2n4401
    Text: ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40 V Collector Dissipation: PC max = 625 mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


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    2N4400 2N4401 Semte2N4401 2N4400 2N4401 Transistor 2N4401 st2n4401 transistor 2n4401 equivalent 2N4400 2N4401 2n4401 data sheet 2N4401 TO-92 2N4400 datasheet transistor equivalents for 2n4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N4400 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


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    2N4400 150mA 500mA 150mA 500mA 100MHz PDF

    2N4400

    Abstract: No abstract text available
    Text: 2N4400 0.6 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  General Purpose Amplifier Transistor TO-92 G  Emitter  Base  Collector H J A D


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    2N4400 150mA 500mA 150mA, 500mA, 100MHz 29-Dec-2010 2N4400 PDF

    2N4401

    Abstract: 2N4400 2N4401 2N4400 transistor 2N4401 2N4400 datasheet vce 1v 2n4401 transistor NPN transistor 2n4400
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 40V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage


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    2N4400/4401 625mW 500mA Width30s, 150mA, 500mA, 100MHz 2N4401 2N4400 2N4401 2N4400 transistor 2N4401 2N4400 datasheet vce 1v 2n4401 transistor NPN transistor 2n4400 PDF

    transistor mps6530 equivalent

    Abstract: transistor 2n4401 equivalent transistor 2n4400 equivalent 2N4400 2N4401 MPS6530 2n4401 motorola charge 2n4401 2n4401 equivalent transistor
    Text: MOTOROLA Order this document by MPS6530/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6530 NPN Silicon COLLECTOR 3 2 BASE 1 2 1 EMITTER 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


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    MPS6530/D MPS6530 226AA) MPS6530/D* transistor mps6530 equivalent transistor 2n4401 equivalent transistor 2n4400 equivalent 2N4400 2N4401 MPS6530 2n4401 motorola charge 2n4401 2n4401 equivalent transistor PDF

    TRANSISTOR 2N 4401

    Abstract: NEC 2N4400 2n4401
    Text: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE 2N4400,2N4401 GENERAL PURPOSE SWITCHING AND AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION 2N4400, 2N4401 are NPN transistors, designed for general purpose switching and amplifier applications, feature injection-molded plastic package for high reliability.


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    2N4400 2N4401 2N4400, 2N4401 625mW 300at 150mA 2N4401) 2N4402, 2N4403 TRANSISTOR 2N 4401 NEC 2N4400 PDF

    2n4401

    Abstract: TRANSISTOR 2N 4401 "cb it" 4400 transistor transistor 4400
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Veto=40V • Collector Dissipation: pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    2N4400/4401 625mW 2N4401 lc50mA, 500mA, 100MHz --100MHz 150mA TRANSISTOR 2N 4401 "cb it" 4400 transistor transistor 4400 PDF

    TRANSISTOR 2N 4401

    Abstract: 2n4401
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V c eo = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    2N4400/4401 625mW 100MHz 100MHz TRANSISTOR 2N 4401 2n4401 PDF

    TRANSISTOR 2N 4401

    Abstract: No abstract text available
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: VCEo=40V TO-92 • Collector D issipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Sym bol Rating Unit Collector-Base Voltage


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    2N4400/4401 625mW 002SQ27 00SS02Ã TRANSISTOR 2N 4401 PDF

    2N4401

    Abstract: 2N4400 2N4401 transistor 2N4401 - TRANSISTOR
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V c eo = 4 0 V * Collector Dissipation: P c max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Em itter Voltage


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    2N4400/4401 625mW 100MA, 002S0H6 2N4401 2N4400 2N4401 transistor 2N4401 - TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4400 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V Ce o = 4 0 V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO 60 40 6 600 625


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    2N4400 625mW 500mA, 150mA, 100KHz 100MHz 150mA PDF

    2N4400

    Abstract: MPS3705 ic hp samsung transistor D 586
    Text: {SAMSUNG SEMICON DUC TO R INC MPS3705 14E D | 7 ^ 4 1 4 5 00Q731fc, 7 | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo=30V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


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    000731b MPS3705 625mW -55M50' 2N4400 T-29-21 100/iA, 50tnA, 100mA, ic hp samsung transistor D 586 PDF

    2n4401

    Abstract: No abstract text available
    Text: 2N4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V CEo = 40V • Collector Dissipation: Pc m ax =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Sym bol Rating Unit VcBO 60 40 6 600 625 150 -5 5 -1 5 0


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    2N4401 625mW 2N4400 500mA, 150mA, lc-500m 100KHz 100MHz 2n4401 PDF

    transistor D 587

    Abstract: 2N4400 MPS3706
    Text: SAMS UN G SEMICONDUCTOR INC MPS3706 14E D 1 7 ^ 4 1 4 0 0007317 | NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 GENERAL PURPOSE TRANSISTOR • Collector-Emltter Voltage: Veto= 20V • Collector Dissipation:'Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta-25°C )


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    00Q7317 MPS3706 625mW 2N4400 T-29-21 100/iAteristic 100/iA, 100mA, 20MHz transistor D 587 PDF

    Untitled

    Abstract: No abstract text available
    Text: S AM SU N G SEMICONDUCTOR INC MPS3706 IME D | 7^4142 00G7317 1 | NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 GENERAL PURPOSE TRANSISTOR • Collector-Em ltter Voltage: Veto= 20V • C ollector Dissipation:'Pc max =625mW TO-92 ABSOLUTE MAXIMUM R ATING S (Ta=25°C)


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    00G7317 MPS3706 625mW 2N4400 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2N4400 Transistor Unit in mm Silicon NPN Epitaxial Type s a MAX. For General Purpose Switching and Amplifier Applications Features • Low Leakage Current ~ Icev ~ ^OOnA Max. , Ig^v OOnA (Max.) @ VCE = 35V, VBE = -0.4V • Excellent DC Current Gain Linearity


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    2N4400 150mA, 2N4402 PDF

    transistor mps3704

    Abstract: VCEO-30V 2N4400 MPS3704
    Text: •S A M S U N G S E M I C O N D U C T O R .INC MPS3704 14E D | 7^4143 00G 73 15 5 | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISTOR • Coilector-Emltter Voltage: V c e o - 3 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    00D7315 MPS3704 625mW 2N4400 T-29-21 100mA, 20MHz Widths300ms, transistor mps3704 VCEO-30V PDF

    transistor mps3704

    Abstract: No abstract text available
    Text: •S A M S U N G S E M I C O N D U C T O R .INC MPS3704 14E D | 7^4143 0 0 G 7 31 5 5 | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISTOR • Coilector-Em ltter Voltage: Vceo-3 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    MPS3704 T-29-21 625mW 2N4400 transistor mps3704 PDF