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    NPN SWITCHING TRANSISTOR IC 5A Search Results

    NPN SWITCHING TRANSISTOR IC 5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    NPN SWITCHING TRANSISTOR IC 5A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUX80

    Abstract: No abstract text available
    Text: /= 7 SGS-THOMSON ^7# IM ^m iC T[i«i] i; BUX80 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL . HIGH FREQUENCY AND EFFICENCY CONVERTERS


    OCR Scan     		BUX80 BUX80 300ns, PDF

    MJE13007

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MJE13007 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES ・Excellent Switching Times : ton=1.6 S Max. , tf=0.7μS(Max.), at IC=5A


    Original     		MJE13007 MJE13007 PDF

    MJE13007F

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MJE13007F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES ・Excellent Switching Times : ton=1.6 S Max. , tf=0.7μS(Max.), at IC=5A


    Original     		MJE13007F MJE13007F PDF

    transistor 9747

    Abstract: 9746 transistor Bc 540 BUF654
    Text: Tem ic BUF654 Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation


    OCR Scan     		BUF654 D-74025 18-Jul-97 transistor 9747 9746 transistor Bc 540 BUF654 PDF

    Untitled

    Abstract: No abstract text available
    Text: T e m ic BUF650 Sem iconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation


    OCR Scan     		BUF650 D-74025 18-Jul-97 PDF

    IC 0116 DC

    Abstract: ic 0116 ic 4440 0116 ic TS13007 TS13007CZ transistor 400V 8A HIGH CURRENT NPN SILICON TRANSISTOR
    Text: TS13007 High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 8A VCE SAT , = 3V @ Ic / Ib = 8A / 2A Pin assignment: 1. Base 2. Collector 3. Emitter Features — Ordering Information Suitable for switching regulator and motor control — High speed switching


    Original     		TS13007 TS13007CZ O-220 IC 0116 DC ic 0116 ic 4440 0116 ic TS13007 TS13007CZ transistor 400V 8A HIGH CURRENT NPN SILICON TRANSISTOR PDF

    1348 transistor

    Abstract: TRANSISTOR K 1507 POWER TRANSISTOR TO-220 marking A07 ITO-220 TSC148D TSC148DCI TSC148DCZ Transistor 1507 Transistor 1308
    Text: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 1.5V @ IC / IB = 5A / 1A Block Diagram ● High Voltage Capability ● Very High Speed Switching


    Original     		TSC148D O-220 ITO-220 TSC148DCZ TSC148DCI 50pcs 1348 transistor TRANSISTOR K 1507 POWER TRANSISTOR TO-220 marking A07 ITO-220 TSC148D Transistor 1507 Transistor 1308 PDF

    N15D

    Abstract: ic N15d ZXT13N15DE6 ZXT13N15DE6TA ZXT13N15DE6TC
    Text: ZXT13N15DE6 SuperSOT4 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 29m ; IC= 5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT13N15DE6 OT23-6 OT23-6 N15D ic N15d ZXT13N15DE6 ZXT13N15DE6TA ZXT13N15DE6TC PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S Max. , tf=0.7 S(Max.), at IC=8A


    Original     		MJE13009 PDF

    N15D

    Abstract: ic N15d ZXT13N15DE6 ZXT13N15DE6TA ZXT13N15DE6TC DSA0037458
    Text: ZXT13N15DE6 SuperSOT4 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 29m ; IC= 5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT13N15DE6 OT23-6 OT23-6 N15D ic N15d ZXT13N15DE6 ZXT13N15DE6TA ZXT13N15DE6TC DSA0037458 PDF

    vbe 12v, vce 600v NPN Transistor

    Abstract: 2SC3831
    Text: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max


    Original     		2SC3831 Pulse20) 100max 500min 105typ MT-100 vbe 12v, vce 600v NPN Transistor 2SC3831 PDF

    MJE13009F

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MJE13009F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S Max. , tf=0.7 S(Max.), at IC=8A


    Original     		MJE13009F MJE13009F PDF

    mje13009 equivalent

    Abstract: MJE13009
    Text: SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S Max. , tf=0.7 S(Max.), at IC=8A


    Original     		MJE13009 mje13009 equivalent MJE13009 PDF

    MJE13009F

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MJE13009F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S Max. , tf=0.7 S(Max.), at IC=8A


    Original     		MJE13009F MJE13009F PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXT13N15DE6 SuperSOT4 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 29m ; IC= 5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT13N15DE6 OT23-6 OT23-6 PDF

    KTD1937

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTD1937 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER. FEATURES • High hpE : 500~1500 Ic=lA . • Low Saturation :VcE(sat)=0.35V(Max.) (Ic=5A). MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


    OCR Scan     		KTD1937 220IS KTD1937 PDF

    MJE13007F

    Abstract: npn switching transistor Ic 5A
    Text: KEC SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. MJE13007F TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES • Excellent Switching Times : ton=1.6juS Max. , tf=0.7j/S(Max.), at Ic=5A


    OCR Scan     		MJE13007F MJE13007F npn switching transistor Ic 5A PDF

    KTD1937

    Abstract: No abstract text available
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD1937 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER. FEATURES • High hFE : 500~1500 Ic=lA . • Low Saturation :VcE<sat)=0.35V(Max.) (Ic=5A). MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		KTD1937 KTD1937 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5352 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE i <;r * 3 < 51 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • • Excellent Switching Times : tr = 0.5^s Max. , tf=0.3,ys (Max.) (Ic = 5A)


    OCR Scan     		2SC5352 PDF

    MJE13007H

    Abstract: MJE13007 TJ2A
    Text: SEMICONDUCTOR MJE13007 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. E A R S F FEATURES P Q D B ᴌExcellent Switching Times S Max. , tf=0.7Ọ S(Max.), at IC=5A


    Original     		MJE13007 MJE13007H MJE13007 TJ2A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5352 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5352 Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS 15.9 MAX. 03.2 ±0.2 HIGH SPEED DC-DC CONVERTER APPLICATIONS • • Excellent Switching Times : tr = 0.5//s Max. , tf=0.3,«s (Max.) (Ic = 5A)


    OCR Scan     		2SC5352 20jus VCC-200V PDF

    2SC3835

    Abstract: DSA0016507
    Text: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max


    Original     		2SC3835 100max 120min Pulse14) 30typ 110typ MT-100 2SC3835 DSA0016507 PDF

    2SC3834

    Abstract: transistor 1022
    Text: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A


    Original     		2SC3834 100max 120min Pulse14) 30typ 110typ MT-25 2SC3834 transistor 1022 PDF

    2sc3835

    Abstract: No abstract text available
    Text: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA V V V(BR)CEO IC=50mA 120min 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A


    Original     		2SC3835 100max 120min Pulse14) 30typ 110typ MT-100 2sc3835 PDF