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    NPN SWITCHING TRANSISTOR 2N2222 Search Results

    NPN SWITCHING TRANSISTOR 2N2222 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN SWITCHING TRANSISTOR 2N2222 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n2222a transistor

    Abstract: 2N2222ADCSM dual npn 500ma 2N2222A surface mount 2N2222A LE17 013 transistor
    Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device


    Original     		PDF 2N2222ADCSM 2N2222A 500mW MO-041BB) 2n2222a transistor 2N2222ADCSM dual npn 500ma 2N2222A surface mount LE17 013 transistor

    Untitled

    Abstract: No abstract text available
    Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device


    Original     		PDF 2N2222ADCSM 2N2222A 500mW 86mW/Â MO-041BB)

    pin configuration transistor 2N2222A

    Abstract: NPN transistor 2n2222A 2N2222A 0612 2N2222A IC 358 of 2N2222A
    Text: 2N2222A High Speed Switching Transistor Features: • NPN Silicon Planar Switching Transistor. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • Switching and Linear application DC and VHF Amplifier applications.


    Original     		PDF 2N2222A pin configuration transistor 2N2222A NPN transistor 2n2222A 2N2222A 0612 2N2222A IC 358 of 2N2222A

    MJE13002

    Abstract: mje13002 to92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13002 MJE13002 MJE13002L-x-T92-B MJE13002G-x-T92-B MJE13002L-xat QW-R204-014 mje13002 to92

    mje13002 to92

    Abstract: MJE13002 equivalent mje13002 OF transistor 2N2222 to-92 MJE13002 transistor MJE13002G MJE-13002 2N2222 NPN Transistor to 92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13002 MJE13002 MJE13002L-x-T92-B MJE13002G-x-T92-B MJE13002L-x-T92-K QW-R204-014 mje13002 to92 MJE13002 equivalent OF transistor 2N2222 to-92 MJE13002 transistor MJE13002G MJE-13002 2N2222 NPN Transistor to 92

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching


    Original     		PDF MJE13002 O-126 QW-R204-014

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13003-E MJE13003-E MJE13003L-E-x-T6S-at QW-R223-009

    transistor, Ic 1A datasheet, NPN

    Abstract: 1.5A 2A coil Driver 2N2222 NPN Transistor features 220V reversing motor control 2N2222 transistor output curve mje13002 TRANSISTOR 2n2222 npn switching transistor 4 npn transistor ic MJE13002 DATA SHEET 220V DC circuits motor control
    Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching


    Original     		PDF MJE13002 O-126 QW-R204-014 transistor, Ic 1A datasheet, NPN 1.5A 2A coil Driver 2N2222 NPN Transistor features 220V reversing motor control 2N2222 transistor output curve mje13002 TRANSISTOR 2n2222 npn switching transistor 4 npn transistor ic MJE13002 DATA SHEET 220V DC circuits motor control

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K QW-R223-009

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13002-E MJE13002-E MJE13002L-E-x-T6S-K MJE13002G-E-x-T6S-K QW-R204-032

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K QW-R223-009

    2n2222a SOT23

    Abstract: 2N2222A JAN 2N2222ACSM 2N2222A SOT23 transistor 2N2222A 2N2222A LCC1
    Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		PDF 2N2222ACSM 150mA 2n2222a SOT23 2N2222A JAN 2N2222ACSM 2N2222A SOT23 transistor 2N2222A 2N2222A LCC1

    2N2222ACSM4

    Abstract: LCC3 weight 2n2222a
    Text: SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR


    Original     		PDF 2N2222ACSM4 150mA 2N2222ACSM4 LCC3 weight 2n2222a

    2n2222a SOT23

    Abstract: 2N2222A LCC1 Transistor 2N2222A SOT23 transistor 2N2222A 2N2222A JAN npn switching transistor 60v 2N2222A 2N2222ACSM HIGH SPEED SWITCHING NPN SOT23
    Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		PDF 2N2222ACSM 150mA 2n2222a SOT23 2N2222A LCC1 Transistor 2N2222A SOT23 transistor 2N2222A 2N2222A JAN npn switching transistor 60v 2N2222A 2N2222ACSM HIGH SPEED SWITCHING NPN SOT23

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited


    Original     		PDF MJE13002-E MJE13002-E MJE13alues

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2222AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic


    Original     		PDF MSR2N2222AUB MIL-PRF-19500 MSR2N2222AUB 2N2222A EEE-INST-002 T4-LDS-0337-2,

    Untitled

    Abstract: No abstract text available
    Text: MVR2N2222AUB / UBC Screened Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic


    Original     		PDF MVR2N2222AUB MIL-PRF-19500 MVR2N2222AUB 2N2222A EEE-INST-002 T4-LDS-0331-2,

    2n2222a SOT23

    Abstract: 2N2222A LCC1 2N2222ACSM 2N2222A
    Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		PDF 2N2222ACSM 150mA 2n2222a SOT23 2N2222A LCC1 2N2222ACSM 2N2222A

    2N2222ACSM

    Abstract: No abstract text available
    Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		PDF 2N2222ACSM 150mA 2N2222ACSM

    Untitled

    Abstract: No abstract text available
    Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		PDF 2N2222ACSM 150mA

    4491E

    Abstract: 2N2222ACSM "npn switching transistor" 2N2222ACSM-RH TST001 SIGMA as 103 63E-10
    Text: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)


    Original     		PDF 2N2222ACSM-RH 0E-10 0E-08 0E-09 4491E 2N2222ACSM "npn switching transistor" 2N2222ACSM-RH TST001 SIGMA as 103 63E-10

    2N2222A LCC1

    Abstract: 2n2222a SOT23 2N2222ACSM-RH SOT23 transistor 2N2222A 2N2222ACSM 2n2222a surface tr 5551 Transistor 2N2222A 2N2222A TST001
    Text: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)


    Original     		PDF 2N2222ACSM-RH TST001 TST002 2N2222A LCC1 2n2222a SOT23 2N2222ACSM-RH SOT23 transistor 2N2222A 2N2222ACSM 2n2222a surface tr 5551 Transistor 2N2222A 2N2222A TST001

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2222AUA Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUA 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MSR2N2222AUA device in a UA package, is ideal to


    Original     		PDF MSR2N2222AUA MIL-PRF-19500 MSR2N2222AUA EEE-INST-002 T4-LDS-0337-1,

    2N2222ACSM4

    Abstract: No abstract text available
    Text: mi SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR


    OCR Scan     		PDF 2N2222ACSM4 2N2222A 100MHz 150mA 150mA 2N2222ACSM4