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    NPN SMD 3A Search Results

    NPN SMD 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd

    NPN SMD 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODE BS t

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT363 SC74 marking 345 BC847BS BC847BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV
    Text: BCM847BV; BCM847BS; BCM847DS NPN/NPN matched double transistors Rev. 05 — 27 June 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.


    Original     		PDF BCM847BV; BCM847BS; BCM847DS BCM847BV OT666 BCM857BV BC847BV BCM847BS OT363 SC-88 TRANSISTOR SMD MARKING CODE BS t TRANSISTOR SMD CODE PACKAGE SOT363 SC74 marking 345 BC847BS BC847BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV

    TRANSISTOR SMD MARKING CODE BS t

    Abstract: SC74 marking 345 TRANSISTOR SMD MARKING CODE BS smd marking code bs BC847BS BC847BV BCM847BS BCM847BV BCM847DS BCM857BS
    Text: BCM847BV; BCM847BS; BCM847DS NPN/NPN matched double transistors Rev. 06 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.


    Original     		PDF BCM847BV; BCM847BS; BCM847DS BCM847BV OT666 BCM857BV BC847BV BCM847BS OT363 SC-88 TRANSISTOR SMD MARKING CODE BS t SC74 marking 345 TRANSISTOR SMD MARKING CODE BS smd marking code bs BC847BS BC847BV BCM847BS BCM847BV BCM847DS BCM857BS

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PDF PHPT61003PY OT669 LFPAK56) PHPT61003NY AEC-Q101

    TRANSISTOR SMD MARKING CODE 2A

    Abstract: MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT89 TRANSISTOR SMD MARKING CODE 210 TRANSISTOR SMD MARKING CODE 2V TRANSISTOR SMD CODE PACKAGE SOT89 4 MARKING SMD IC CODE STC4350F transistor smd 08t STA3350F
    Text: STC4350F NPN Silicon Transistor PIN Connection Applications • Power amplifier application • High current switching application Features • Low saturation voltage: VCE sat =0.15V Typ. @ IC=1A, IB=50mA • Large collector current capacity: IC=3A • Small and compact SMD type package


    Original     		PDF STC4350F STA3350F OT-89 KSD-T5B008-003 TRANSISTOR SMD MARKING CODE 2A MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT89 TRANSISTOR SMD MARKING CODE 210 TRANSISTOR SMD MARKING CODE 2V TRANSISTOR SMD CODE PACKAGE SOT89 4 MARKING SMD IC CODE STC4350F transistor smd 08t STA3350F

    Untitled

    Abstract: No abstract text available
    Text: STC4350F NPN Silicon Transistor Applications • Power amplifier application PIN Connection • High current switching application Features • Low saturation voltage: VCE sat =0.15V Typ. @ IC=1A, IB=50mA • Large collector current capacity: IC=3A • Small and compact SMD type package


    Original     		PDF STC4350F STA3350F OT-89 KSD-T5B008-005

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    Untitled

    Abstract: No abstract text available
    Text: BCU86-SMD BCU87-SMD MECHANICAL DATA Dimensions in mm NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .6 1 .5 FEATURES 2 .5 1 .0 4 .2 5 m a x . Ideal For High current Switching Application • LOW VCE SAT 0 .4 0 0 .4 0 • HIGH CURRENT CAPACITY AND WIDE ASO


    Original     		PDF BCU86-SMD BCU87-SMD BCU86 BCU87 100mA

    fast switching pnp transistor 3A 60V

    Abstract: magnatec 1455 BCU86 BCU86-SMD BCU87 BCU87-SMD
    Text: BCU86-SMD BCU87-SMD MECHANICAL DATA Dimensions in mm NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .6 1 .5 FEATURES 2 .5 1 .0 4 .2 5 m a x . Ideal For High current Switching Application • LOW VCE SAT 0 .4 0 0 .4 0 • HIGH CURRENT CAPACITY AND WIDE ASO


    Original     		PDF BCU86-SMD BCU87-SMD BCU86 BCU87 fast switching pnp transistor 3A 60V magnatec 1455 BCU86 BCU86-SMD BCU87 BCU87-SMD

    smd 2sd965

    Abstract: npn smd 2a 2SD965
    Text: Transistors IC SMD Type Silicon NPN epitaxial planar type 2SD965 Features Low collector-emitter saturation voltage VCE sat Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter


    Original     		PDF 2SD965 smd 2sd965 npn smd 2a 2SD965

    power transistor Ic 4A NPN smd

    Abstract: transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.


    Original     		PDF FCX1047A Type000 50MHz power transistor Ic 4A NPN smd transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking

    smd transistor MARKING 2A

    Abstract: smd transistor 2A npn smd 2a smd transistor MARKING 2A npn FCX1053A Transistor marking 2A transistor smd marking
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1053A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 21mv Typ. Extremely low equivalent on-resistance.


    Original     		PDF FCX1053A 100mA 200mA 100MHz smd transistor MARKING 2A smd transistor 2A npn smd 2a smd transistor MARKING 2A npn FCX1053A Transistor marking 2A transistor smd marking

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    npn smd 3a

    Abstract: SMD BR 17 smd 2a ic SMD TRANSISTOR MARKING 2A 2A marking transistor npn smd 2a smd transistor 2A smd transistor marking br FCX1051A
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1051A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 17mv Typ. Extremely low equivalent on-resistance.


    Original     		PDF FCX1051A 100MHz npn smd 3a SMD BR 17 smd 2a ic SMD TRANSISTOR MARKING 2A 2A marking transistor npn smd 2a smd transistor 2A smd transistor marking br FCX1051A

    power transistor Ic 4A datasheet NPN smd

    Abstract: FZT688B
    Text: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT688B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on resistance; RCE sat 83mÙ at 3A. +0.1 3.00-0.1 Gain of 400 at IC=3 Amps and very low saturation voltage.


    Original     		PDF FZT688B OT-223 50MHz 500mA, power transistor Ic 4A datasheet NPN smd FZT688B

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    SMD Transistor DN

    Abstract: MARKING DN 2SD1999 20 diode
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1999 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Small-sized package making it easy to provide highdensity,


    Original     		PDF 2SD1999 150mA SMD Transistor DN MARKING DN 2SD1999 20 diode

    2SC4597

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon NPN Triple Diffused Type 2SC4597 Features TO-263 Surface mount type device making the following possible. 1 .2 7 -0+ 0.1.1 Reduction in the number of manufacturing processes Unit: mm for 2SC4597-applied equipment. +0.1 1.27-0.1


    Original     		PDF 2SC4597 O-263 2SC4597-applied 2SC4597

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    npn smd 3a

    Abstract: FMMT617TA ic3a
    Text: Transistors SMD Type NPN Silicon Power Transistor FMMT617TA SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Power Dissipation: Ptot=625mW 1 0.55 • Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 ● Collector Current: IC=3A


    Original     		PDF FMMT617TA OT-23 625mW 200mA, 50MHz npn smd 3a FMMT617TA ic3a

    2SD1257

    Abstract: 2SD1257A
    Text: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1257,2SD1257A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Low collector-emitter saturation voltage VCE sat . Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15


    Original     		PDF 2SD1257 2SD1257A O-252 2SD1257 2SD1257A

    smd npn darlington

    Abstract: CZT122 KZT122
    Text: Transistors IC SMD Type Surface Mount NPN Silicon Power Darlington Transistor KZT122 CZT122 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 High current (max. 5A). Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2


    Original     		PDF KZT122 CZT122) OT-223 smd npn darlington CZT122 KZT122

    FZT1047A

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1047A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 VCEO = 10V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3


    Original     		PDF FZT1047A OT-223 250mA 50MHz FZT1047A

    npn smd 3a

    Abstract: power transistor Ic 4A datasheet NPN smd FZT1048A 5a SMD Transistor
    Text: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1048A SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 VCEO = 17.5V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3


    Original     		PDF FZT1048A OT-223 50MHz npn smd 3a power transistor Ic 4A datasheet NPN smd FZT1048A 5a SMD Transistor

    Untitled

    Abstract: No abstract text available
    Text: Philips Components Datasheet status Product specification date of issue April 1991 B D S201/203/77 NPN silicon epitaxial base power transistors DESCRIPTION PINNING-SOT223 PIN NPN silicon epitaxial base transistors DESCRIPTION in a miniature SMD envelope 1


    OCR Scan     		PDF S201/203/77 PINNING-SOT223 OT223) BDS202/204/78. BDS201/203/77 bfci53T31 OT223.