NPN SILICON POWER TRANSISTOR Search Results

NPN SILICON POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

NPN SILICON POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N5192G Abstract: No abstract text available Text: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS	Original	2N5190G, 2N5191G, 2N5192G 2N5194, 2N5195. 2N5190G 2N5191G 2N5192G	PDF
Untitled Abstract: No abstract text available Text: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS	Original	2N5190G, 2N5191G, 2N5192G 2N5194, 2N5195. 2N5190G 2N5191G	PDF
Untitled Abstract: No abstract text available Text: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features 4.0 AMPERES NPN SILICON POWER TRANSISTORS	Original	2N5190, 2N5191, 2N5192 2N5194, 2N5195. 2N5190 2N5191	PDF
BD435 Abstract: BD441 Text: BD435, BD437, BD439, BD441 Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON	Original	BD435, BD437, BD439, BD441 BD438 BD442 BD435 BD437 BD439 BD435 BD441	PDF
Untitled Abstract: No abstract text available Text: BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON	Original	BD435G, BD437G, BD439G, BD441G BD438 BD442 BD435G BD437G BD439G	PDF
bd439g Abstract: No abstract text available Text: BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON	Original	BD435G, BD437G, BD439G, BD441G BD438 BD442 BD435G BD437G BD439G	PDF
2SC2073 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2073 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION The UTC 2SC2073 is an NPN silicon power transistors, it uses UTC’s advanced technology to provide customers with high collector	Original	2SC2073 2SC2073 2SC2073L- 2SC2073G-TA3-T O-220 QW-R221-021	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL  DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier.  FEATURES * Low frequency power amplifier 	Original	2SD667 2SD667 2SD667L-x-T9N-B 2SD667G-x-T9N-B 2SD667L-x-T9N-K 2SD667G-x-T9N-K O-92NL QW-R211-019	PDF
290A transistor Abstract: 2SD667 transistor 2sd667 Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES * Low frequency power amplifier * Halogen Free	Original	2SD667 2SD667 2SD667G-T9N-B 2SD667G-T9N-K O-92NL QW-R211-019 290A transistor transistor 2sd667	PDF
290A transistor Abstract: transistor 2sd667 2SD667 Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES * Low frequency power amplifier ORDERING INFORMATION	Original	2SD667 2SD667 2SD667L-T9N-B 2SD667G-T9N-B 2SD667L-T9N-K 2SD667G-T9N-K O-92NL QW-R211-019 290A transistor transistor 2sd667	PDF
2sd882 nec Abstract: nec 2sd882 2SD882 transistor 2sd882 Text: DATA SHEET NPN SILICON POWER TRANSISTOR 2SD882 NPN SILICON POWER TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver.	Original	2SD882 2SD882 2sd882 nec nec 2sd882 transistor 2sd882	PDF
LLE18100X Abstract: MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product specification November 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X FEATURES	Original	LLE18100X OT437A LLE18100X MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431	PDF
2N3771 Abstract: 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771 Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. *ON Semiconductor Preferred Device 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON	Original	2N3771* 2N3772 2N3771 2N3771/D 2N3771 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771	PDF
BU326A Abstract: BU326 Text: BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN	Original	BU326A BU326A BU326	PDF

13003d Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS  DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DE 13003DE 13003DEL-x-T60-K 13003DEG-x-T60-K 13003DEL-x-T92-B 13003DEG-at QW-R223-013 13003d	PDF
13003D Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DE 13003DE 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 1300at QW-R223-013 13003D	PDF
2N6388 Abstract: No abstract text available Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration	Original	2N6388 O-220 O-220 P011C 2N6388	PDF
2N6388 Abstract: No abstract text available Text: 2N6388  SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration	Original	2N6388 O-220 O-220 2N6388	PDF
2N6388 Abstract: No abstract text available Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration	Original	2N6388 O-220 O-220 2N6388	PDF
Untitled Abstract: No abstract text available Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s ct u d o DESCRIPTION The device is a silicon Epitaxial-Base NPN power	Original	2N6388 O-220	PDF
2N6388 Abstract: No abstract text available Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration	Original	2N6388 O-220 O-220 2N6388	PDF
Untitled Abstract: No abstract text available Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration	OCR Scan	2N6388 O-220	PDF
2SC2586 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eters The 2SC2586 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.	OCR Scan	2SC2586 2SC2586 P11693EJ1V0DS00	PDF
MJE2160 Abstract: MJE1090 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103 Text: MJE2090 H, MJE2093 SILICON For Specifications, See MJE1090 Data. MJE2100 th r u MJE2103 (SILICON) For Specifications, See MJE 1090 Data. MJE2160 (silicon) PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR 1.5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for line operated audio output amplifier applications	OCR Scan	MJE2090 MJE2093 MJE1090 MIE2100 MJE2103 MJE2160 SeeAN-415) MJE2160 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103	PDF

NPN SILICON POWER TRANSISTOR Search Results

NPN SILICON POWER TRANSISTOR Result Highlights (5)

NPN SILICON POWER TRANSISTOR Datasheets Context Search

2N5192G

Untitled

Untitled

BD435

Untitled

bd439g

2SC2073

Untitled

290A transistor

290A transistor

2sd882 nec

LLE18100X

2N3771

BU326A

13003d

13003D

2N6388

2N6388

2N6388

Untitled

2N6388

Untitled

2SC2586

MJE2160