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    NPN RF TRANSITOR Search Results

    NPN RF TRANSITOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3046 Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    NPN RF TRANSITOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BFP620

    Abstract: BGA420 T-25 KF 25 transistor AF 2596
    Text: BFP620 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		BFP620 OT343 BFP620 BGA420 T-25 KF 25 transistor AF 2596 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		BFP620 VPS05605 OT343 Aug-11-2004 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		BFP620 VPS05605 OT343 PDF

    bfp640f

    Abstract: BFP420F
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640F bfp640f BFP420F PDF

    R4S BFP640

    Abstract: BFP640 transistor ph 45 v marking r4s
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640 VPS05605 OT343 Aug-16-2004 R4S BFP640 BFP640 transistor ph 45 v marking r4s PDF

    transitor RF 98

    Abstract: BFP620 applications note germanium transistor ac 128 BFP620
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		BFP620 VPS05605 OT343 Apr-21-2004 transitor RF 98 BFP620 applications note germanium transistor ac 128 BFP620 PDF

    marking re

    Abstract: BFP640 BGA420 T-25
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640 OT343 marking re BFP640 BGA420 T-25 PDF

    bfp640

    Abstract: BFP640/F
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640 VPS05605 OT343 bfp640 BFP640/F PDF

    BFP620

    Abstract: T-25
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		BFP620 VPS05605 OT343 BFP620 T-25 PDF

    R4S BFP640

    Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640 VPS05605 OT343 Apr-21-2004 R4S BFP640 BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP620_E6327 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		BFP620 E6327 VPS05605 OT343 PDF

    BFP620

    Abstract: No abstract text available
    Text: BFP620_E7764 NPN Silicon Germanium RF Transistor 3 4  High gain low noise RF transistor  Provides outstanding performance for a wide range of wireless applications 2  Ideal for CDMA and WLAN applications  Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		BFP620 E7764 VPS05605 OT343 Jul-03-2003 PDF

    marking r4s

    Abstract: bfp640f BFP640F equivalent ccb 21
    Text: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640F Mar-11-2004 marking r4s bfp640f BFP640F equivalent ccb 21 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4  High gain low noise RF transistor  Provides outstanding performance for a wide range of wireless applications 2  Ideal for CDMA and WLAN applications  Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605


    Original     		BFP620 VPS05605 OT343 Dec-19-2002 PDF

    BFP620

    Abstract: BFP620 acs BFP620 applications note GFT45
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4  High gain low noise RF transistor  Provides outstanding performance for a wide range of wireless applications 2  Ideal for CDMA and WLAN applications  Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605


    Original     		BFP620 VPS05605 OT343 Apr-07-2003 BFP620 BFP620 acs BFP620 applications note GFT45 PDF

    bfp640f

    Abstract: SPICE 2G6 transistor BF 298
    Text: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640F bfp640f SPICE 2G6 transistor BF 298 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640F PDF

    BFP640 noise figure

    Abstract: s parameters 4ghz
    Text: BFP640 E/L6327 and E/L7764 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640 E/L6327 E/L7764 L6327 L7764 VPS05605 BFP640 Oct-30-2003 BFP640 noise figure s parameters 4ghz PDF

    germanium transistor ac 128

    Abstract: BFR705L3RH BFR740L3RH WLAN chip
    Text: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 a wide range of wireless applications 1 2 up to 10 GHz and more • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		BFR740L3RH germanium transistor ac 128 BFR705L3RH BFR740L3RH WLAN chip PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 3 1 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages


    Original     		BFR750L3RH PDF

    4ghz s parameters transistor

    Abstract: No abstract text available
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 BFP640E/L6327 and E/L7764 • High gain low noise RF transistor • Provides outstanding performance 2 for a wide range of wireless applications • Ideal for CDMA and WLAN applications 1 VPS05605 • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640 BFP640E/L6327 E/L7764 L6327 L7764 VPS05605 Mar-01-2004 4ghz s parameters transistor PDF

    BFP620F

    Abstract: TRANSISTOR Bf 522 marking R2s transistor bf 425 TRANSISTOR MARKING 707 transistor marking R2s BFP620F AC
    Text: BFP620F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 • Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain TSFP-4


    Original     		BFP620F Apr-21-2004 BFP620F TRANSISTOR Bf 522 marking R2s transistor bf 425 TRANSISTOR MARKING 707 transistor marking R2s BFP620F AC PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:


    OCR Scan     		2SC2933 2SC2933 940MHz 900MHz, 900MHz PDF

    T rf transitor

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN E P IT A X IA L P L A N A R T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:


    OCR Scan     		2SC2933 2SC2933 940MHz 900MHz, 900MHz T rf transitor PDF