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    NPN PHOTOTRANSISTOR PACKAGE Search Results

    NPN PHOTOTRANSISTOR PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    NPN PHOTOTRANSISTOR PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO46 lens phototransistor

    Abstract: LA12 SLT-50E1A SLT-50E1B SLT-50E1C
    Text: SLT-50E1 Planar Phototransistor Features • Planar NPN phototransistor • Wide acceptance angle • Four sensitivity ranges Emitter 25 min 5.34 Description This planar NPN silicon phototransistor has a response ranging from the visible to the infrared. The package is a modified TO-46 with a clear epoxy


    Original     		PDF SLT-50E1 SLT-50E1C QF-84 TO46 lens phototransistor LA12 SLT-50E1A SLT-50E1B

    Untitled

    Abstract: No abstract text available
    Text: SLT-50E1 Planar Phototransistor Features • Planar NPN phototransistor • Wide acceptance angle • Four sensitivity ranges Emitter 25 min 5.34 Description This planar NPN silicon phototransistor has a response ranging from the visible to the infrared. The package is a modified TO-46 with a clear epoxy


    Original     		PDF SLT-50E1 SLT-50E1C

    Untitled

    Abstract: No abstract text available
    Text: Opto Semiconductors NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 303 SFH 303 FA 9.0 8.2 B C E 11.5 10.9 0.6 0.4 6.9 0.7 0.4 7.8 7.5 25.2


    Original     		PDF GEO06351

    npn phototransistor sfh 309

    Abstract: SFH 256 diode p1000 Fototransistor fototransistor led P1000 diode Q62702-P999 transistor 309 Q62702-P1000 Q62702-P174
    Text: SFH 309 SFH 309 F NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified


    Original     		PDF IPCE/IPCE25o npn phototransistor sfh 309 SFH 256 diode p1000 Fototransistor fototransistor led P1000 diode Q62702-P999 transistor 309 Q62702-P1000 Q62702-P174

    mouse Phototransistor

    Abstract: KM-4457 W610MP4BT/BD
    Text: NPN BLACK PLASTIC PHOTOTRANSISTOR W610MP4BT/BD Features Description ! MECHANICALLY AND SPECTRALLY MATCHED Made with NPN silicon phototransistor chips. TO THE KM-4457 INFRARED EMITTING LED LAMP SERIES. ! BLACK PLASTIC PACKAGE. ! COUPLED WITH KM-4457 INFRARED EMITTING


    Original     		PDF W610MP4BT/BD KM-4457 DSAD2239 APR/15/2003 100uA 500uA 940nm mouse Phototransistor W610MP4BT/BD

    ic 8253

    Abstract: phototransistor, 850nm TEKT5400 8239 TEKT5400S TSKS5400S
    Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor Description TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package.A small recessed lens provides a high sensitivity in a low profile case.


    Original     		PDF TEKT5400S TEKT5400S 850nm TSKS5400S D-74025 ic 8253 phototransistor, 850nm TEKT5400 8239 TSKS5400S

    Untitled

    Abstract: No abstract text available
    Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor Description TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package.A small recessed lens provides a high sensitivity in a low profile case.


    Original     		PDF TEKT5400S TEKT5400S 850nm TSKS5400S D-74025

    Untitled

    Abstract: No abstract text available
    Text: TEST2600 Vishay Telefunken Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature side view plastic package with cylindrical lens. Its epoxy casting is designed as a infrared filter to


    Original     		PDF TEST2600 TEST2600 950nm) TSSS2600 D-74025 20-May-99

    1-6732

    Abstract: TEKT5400S TEKT5400S-ASZ
    Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor Description TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package. A small recessed lens provides a high sensitivity in a low profile case.


    Original     		PDF TEKT5400S TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S-ASZ D-74025 08-Mar-05 1-6732

    mouse Phototransistor

    Abstract: KDA0529 KM-4457
    Text: NPN BLACK PLASTIC PHOTOTRANSISTOR L-610MP4BT/BD Features Description ! MECHANICALLY AND SPECTRALLY MATCHED Made with NPN silicon phototransistor chips. TO THE KM-4457 INFRARED EMITTING LED LAMP SERIES. ! BLACK PLASTIC PACKAGE. ! COUPLED WITH KM-4457 INFRARED EMITTING


    Original     		PDF L-610MP4BT/BD KM-4457 KDA0529 100uA 500uA SEP/17/2001 940nm mouse Phototransistor KDA0529

    IC AN 8249

    Abstract: ic 8253 TEKT5400S TEKT5400S-ASZ TSKS5400S
    Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor Description TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package. A small recessed lens provides a high sensitivity in a low profile case.


    Original     		PDF TEKT5400S TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC 08-Apr-05 IC AN 8249 ic 8253 TEKT5400S-ASZ TSKS5400S

    TEMT 2100

    Abstract: TEMT2100
    Text: TELEFUNKEN Semiconductors TEMT 2100 Silicon NPN Phototransistor Description TEMT2100 is a high speed silicon NPN epitaxial planar phototransistor in miniature SOT–23 package for surface mounting on printed boards. Due to its waterclear epoxy the device is sensitive


    Original     		PDF TEMT2100 D-74025 TEMT 2100

    MID-18A22

    Abstract: No abstract text available
    Text: 1.8mm PACKAGE NPN PHOTOTRANSISTOR Description MID-18A22 Package Dimensions The MID-18A22 is a NPN silicon phototransistor mounted in a lensed , special dark plastic package.The lensing effect of the package allows an acceptance view Unit : mm inches φ1.80


    Original     		PDF MID-18A22 MID-18A22 40MIN. 940nm) 00MIN.

    sfh siemens

    Abstract: npn phototransistor sfh 309 380nm SFH 309
    Text: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Area not flat 4,5t-” Collector Transistor Cathode (Diode) 'Chip position


    OCR Scan     		PDF PCE25° sfh siemens npn phototransistor sfh 309 380nm SFH 309

    f41 marking

    Abstract: No abstract text available
    Text: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter SFH 303 SFH 303 F Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		PDF MCT270 MCT270 2500VAC 3000VAC E50151 C2090 C1681 C1682 C1683 C1684

    Untitled

    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT270 PACKAGE DIMENSIONS DESCRIPTIO N The MCT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor. WWW


    OCR Scan     		PDF MCT270 MCT270 E90700 ST1603A C1682 C1681 C1683 C1685 C1296A 74bfc

    Untitled

    Abstract: No abstract text available
    Text: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		PDF MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A 74bbfl51 C1294

    C1684 r

    Abstract: C1684R C1680 C1685 R transistor
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT274 PACKAGE DIMENSIONS The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN high-gain silicon phototransistor. r ~


    OCR Scan     		PDF MCT274 MCT274 E50151 C2090 C1681 C1682 C1684 C1683 100/is C1685 C1684 r C1684R C1680 C1685 R transistor

    C1685 transistor

    Abstract: transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271
    Text: [ S PHOTOTRANSISTOR OPTOCOUPLER U OPTOELECTRONICS MCT271 DESCRIPTION PACKAGE DIMENSIONS & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		PDF MCT271 ST1603A C2079 E90700 C1682 C1683 C1684 C1685 C1296A C1685 transistor transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271

    C1681

    Abstract: transistor c1684 c1685 NPN C1685 transistor t051
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35


    OCR Scan     		PDF MCT272 MCT272 Ratio--75% time--10 E50151 C2090 C1683 C1684 C1294 C1681 transistor c1684 c1685 NPN C1685 transistor t051

    PF42

    Abstract: SFM309 SFH309P-2 SFM309P
    Text: SFH309P DAYUGHT FILTER SFH309PF SIEMENS SILICON NPN PHOTOTRANSISTOR FE AT U R ES DESCRIPTION • Silicon NPN Phototransistor In Epitaxial Planar Technology The SFH309P/309PF are silicon NPN phototransistors in a standard T1 3 mm plastic package. The SFH309PF has a black daylight filter.


    OCR Scan     		PDF SFH309P SFH309PF SFH309P: SFH309PF: SFH487P SFH309P/309PF itivity-SFH309P itivity-SFH309PF SFH309FVPF PF42 SFM309 SFH309P-2 SFM309P

    C1243

    Abstract: C2090
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86


    OCR Scan     		PDF MCT276 MCT276 E5015CAL C1686 C1679 C1680 C1243 C1243 C2090

    Phototransistor bp 101

    Abstract: fototransistor led bf 252 SFH 207 Q62702-P1057 Q62702-P1058 Q62702-P1192 Q62702-P85-S2 Q62702-P85-S3 Q62702-P85-S4
    Text: SIEMENS NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon NPN Phototransistor with Daylight Filter BP 103B BP 103 BF Area not flat Emitter _ 2 5 .2 _ J 2 4.2 Collector 8.2 Approx. weight 0 .2 g


    OCR Scan     		PDF /PCEtfpcE25Â 23SL0S oE025Â Phototransistor bp 101 fototransistor led bf 252 SFH 207 Q62702-P1057 Q62702-P1058 Q62702-P1192 Q62702-P85-S2 Q62702-P85-S3 Q62702-P85-S4