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    NPN PHOTOTRANSISTOR 560NM Search Results

    NPN PHOTOTRANSISTOR 560NM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN PHOTOTRANSISTOR 560NM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GEOY6446

    Abstract: OHLY0598 npn phototransistor 560nm
    Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)


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    Untitled

    Abstract: No abstract text available
    Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)


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    PDF

    sfh 3310

    Abstract: 560nm GEOY6446 OHLY0598 npn phototransistor 560nm
    Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)


    Original
    PDF

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


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    200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032 PDF