TRANSISTOR AS3
Abstract: transistor code AS3 On semiconductor date Code sot-223
Text: BSP52T1 Preferred Device NPN Small−Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is
|
Original
|
PDF
|
BSP52T1
OT-223
BSP52T1
inch/1000
BSP62T1
BSP52T1/D
TRANSISTOR AS3
transistor code AS3
On semiconductor date Code sot-223
|
transistor code AS3
Abstract: TRANSISTOR AS3 BSP52T1 BSP52T1G BSP62T1 PH* transistor
Text: BSP52T1 Preferred Device NPN Small−Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is
|
Original
|
PDF
|
BSP52T1
OT-223
BSP52T1
inch/1000
BSP62T1
BSP52T1/D
transistor code AS3
TRANSISTOR AS3
BSP52T1G
BSP62T1
PH* transistor
|
AYW marking code IC
Abstract: BSP52T1 BSP52T1G BSP52T3 BSP52T3G BSP62T1 transistor code AS3
Text: BSP52T1, BSP52T3 Preferred Devices NPN Small−Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is
|
Original
|
PDF
|
BSP52T1,
BSP52T3
OT-223
BSP52T1
inch/1000
BSP62T1
BSP52T1/D
AYW marking code IC
BSP52T1G
BSP52T3
BSP52T3G
BSP62T1
transistor code AS3
|
NJD35N04G
Abstract: NJD35N04T4G
Text: NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area
|
Original
|
PDF
|
NJD35N04G
35N04G
NJD35N04/D
NJD35N04G
NJD35N04T4G
|
NJD35N04G
Abstract: NJD35N04T4G
Text: NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area
|
Original
|
PDF
|
NJD35N04G
35N04G
NJD35N04/D
NJD35N04G
NJD35N04T4G
|
ncv1413bdg
Abstract: MC1413DG MC1413DR2 pin details of ULN2003A ULN2003A 15 pin details application MC1413BDR2G MC1413P IR P 648 H MC1413 MC1413B
Text: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage
|
Original
|
PDF
|
MC1413,
MC1413B,
NCV1413B
PDIP-16
SOIC-16
MC1413/D
ncv1413bdg
MC1413DG
MC1413DR2
pin details of ULN2003A
ULN2003A 15 pin details application
MC1413BDR2G
MC1413P
IR P 648 H
MC1413
MC1413B
|
100 amp npn darlington power transistors
Abstract: MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120
Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS
|
Original
|
PDF
|
MJD122
MJD127
2N6040-2N6045
TIP120-TIP122
TIP125-TIP127
MJD122/D
100 amp npn darlington power transistors
MJD127T4G
NPN Silicon Power Transistor DPAK
TIP125 G
2N6040
2N6045
MJD122
MJD122T4
MJD127
TIP120
|
"Darlington Transistor"
Abstract: 131 Transistor darlington power transistor 2N6059 CP178
Text: Central TM PROCESS CP178 Power Transistor Semiconductor Corp. NPN Darlington Transistor PROCESS DETAILS Die Size 131 x 131 MILS Die Thickness 12.5 ±1.0 MILS Emitter Bonding Pad Area 27 x 36 MILS Base Bonding Pad Area 20 x 37 MILS Top Side Metalization Al - 50,000Å
|
Original
|
PDF
|
CP178
2N6059
"Darlington Transistor"
131 Transistor
darlington power transistor
2N6059
CP178
|
MMBT6427LT1
Abstract: MMBT6427LT1G
Text: MMBT6427LT1 Preferred Device Darlington Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating COLLECTOR 3 Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 40 Vdc
|
Original
|
PDF
|
MMBT6427LT1
MMBT6427LT1/D
MMBT6427LT1
MMBT6427LT1G
|
2N7569
Abstract: No abstract text available
Text: INCH-POUND MIL-PRF-19500/734 16 February 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7569, 2N7570, AND 2N7571 JAN, JANTX, JANTXV AND JANS. This specification is approved for use by all Departments
|
Original
|
PDF
|
MIL-PRF-19500/734
2N7569,
2N7570,
2N7571
MIL-PRF-19500.
2N7569
|
MPSA27RLRAG
Abstract: MPSA27 MPSA27G MPSA27RLRA MPSA27RLRM MPSA27RLRMG MPS-A27 Marking code mps
Text: MPSA27 Darlington Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 60 Vdc Emitter −Base Voltage VEBO 10 Vdc Collector Current − Continuous
|
Original
|
PDF
|
MPSA27
MPSA27/D
MPSA27RLRAG
MPSA27
MPSA27G
MPSA27RLRA
MPSA27RLRM
MPSA27RLRMG
MPS-A27
Marking code mps
|
MJD122T4G
Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves
|
Original
|
PDF
|
MJD122
MJD127
2N6040-2N6045
TIP120-TIP122
TIP125-TIP127
MJD122/D
MJD122T4G
2N6040
2N6045
MJD122
MJD122G
MJD127
TIP120
TIP122
TIP125
TIP127
|
MPSW13
Abstract: MPSW13RLRA MPSW13RLRAG MARKING CODE W13 mps w13 Marking code mps
Text: MPSW13 One Watt Darlington Transistor NPN Silicon http://onsemi.com Features • Pb−Free Package is Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage
|
Original
|
PDF
|
MPSW13
O-226)
MPSW13/D
MPSW13
MPSW13RLRA
MPSW13RLRAG
MARKING CODE W13
mps w13
Marking code mps
|
Untitled
Abstract: No abstract text available
Text: MPSW13 One Watt Darlington Transistor NPN Silicon http://onsemi.com Features • Pb−Free Package is Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage
|
Original
|
PDF
|
MPSW13
MPSW13/D
|
|
|
2n6284 equivalent
Abstract: S16884 2N6283 2N6284
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 February 2009. MIL-PRF-19500/504E 18 November 2008 SUPERSEDING MIL-PRF-19500/504D 29 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER,
|
Original
|
PDF
|
MIL-PRF-19500/504E
MIL-PRF-19500/504D
2N6283
2N6284,
MIL-PRF-19500.
2n6284 equivalent
S16884
2N6284
|
2n6059 equivalent
Abstract: 2N6059 JANTX equivalent 2N6058 2N6059 C-2688
Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 December 2008. MIL-PRF-19500/502E 4 September 2008 SUPERSEDING MIL-PRF-19500/502D 12 March 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER,
|
Original
|
PDF
|
MIL-PRF-19500/502E
MIL-PRF-19500/502D
2N6058
2N6059,
MIL-PRF-19500.
2n6059 equivalent
2N6059 JANTX equivalent
2N6059
C-2688
|
Untitled
Abstract: No abstract text available
Text: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,
|
OCR Scan
|
PDF
|
b3b72S4
MJ10014
MJ10014
|
bu826
Abstract: BU626 BU826A SOT93 npn darlington transistor 131
Text: 45E D PHILIPS INTERNATIONAL E3 711002b □ D3CH2C1 T Ö P H I N '‘ BU826 BU826A SILICON DARLINGTON POWER TRANSISTOR M onolithic high voltage npn Darlington circuit w ith integrated speed-up diode in a plastic SO T93 envelope, intended for fast switching application.
|
OCR Scan
|
PDF
|
711002b
BU826
BU826A
7110fiEb
003CH3M
BU826A
BU626
SOT93
npn darlington transistor 131
|
MJ10002
Abstract: bem diode
Text: MOTOROLA SC XSTRS/R F MOTOROLA SEM ICO N DUCTO R M J1 0 0 0 2 TECHNICAL DATA D e sig n e rs D a ta Sheet 10 A M PER E NPN SILICON SWITCHMODE S E R IE S NPN SILICO N POWER DARLIN GTON TRAN SISTO RS POWER DARLINGTON TRAN SISTORS The MJ10002 Darlington transistor is designed for high-voltage,
|
OCR Scan
|
PDF
|
MJ10002
bem diode
|
ESM4045AV
Abstract: ESM4045A FASTON ESM4045D CSA50 4045D
Text: N AMER PHILIPS/DISCRETE bl E D • bb5 3 ^ 3 ]> D Q E â b 0 3 344 *APX ESM4045A V ESM4045D(V) SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).
|
OCR Scan
|
PDF
|
ESM4045A
ESM4045D
4045D
Csat/50
ESM4045AV
FASTON
CSA50
|
MP4502
Abstract: No abstract text available
Text: TOSHIBA MP4502 TOSHIBA PO W E R TRANSISTOR M O D ULE SILICON NPN EPITA XIAL TYPE DARLINGTON PO W E R TRANSISTOR 4 IN 1 M P4 50 2 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 31.5 ± 0.2
|
OCR Scan
|
PDF
|
MP4502
MP4502
|
DARLINGTON 3A 100V npn array
Abstract: No abstract text available
Text: MP6901 SILICON NPN/PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Package with Heat Sink Isolated to Lead. (SIP 12 Pin)
|
OCR Scan
|
PDF
|
MP6901
DARLINGTON 3A 100V npn array
|
E2B20
Abstract: Transistor bdy 11 BDY88 BDY87 TRANSISTOR D131 transistor 1005 oj SWITCHING TRANSISTOR 60V BDY89 D129 D131
Text: BDY 87, BDY 88, BDY 89 NPN Darlington stages for AF and switching applications BDY 87, BDY 88, and BDY 89 are hig h -p o w e red arid highly am plifying NPN o u tp u t stages for AF and s w itch in g applications. They consist of tw o single-diffused NPN transistor systems each in com pound connection in a case 9 A 4 DIN 41875 S O T-9
|
OCR Scan
|
PDF
|
Q62702-
Q62901
Q62901-
BDY87
rcase-45Â
E2B20
Transistor bdy 11
BDY88
BDY87
TRANSISTOR D131
transistor 1005 oj
SWITCHING TRANSISTOR 60V
BDY89
D129
D131
|
H11B255
Abstract: sot-90B OPTOCOUPLER dc
Text: H11B255 _ y \ _ OPTOCOUPLER O ptically coupled isolator consisting o f an infrared em itting GaAs diode and an npn silicon photo Darlington transistor. Features • High maxim um o u tp u t voltage • V ery high o u tp u t/in p u t DC current transfer ratio
|
OCR Scan
|
PDF
|
H11B255
0110b
7Z94797A
H11B255
sot-90B
OPTOCOUPLER dc
|
