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    NPN CENTER BASE TRANSISTORS Search Results

    NPN CENTER BASE TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    NPN CENTER BASE TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MPS650

    Abstract: MPS651 MPS65 MPS750 MPS751
    Text: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol


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    MPS650 MPS651 MPS750 MPS751 r14525 MPS650/D MPS650 MPS651 MPS65 MPS750 MPS751 PDF

    MJL4281A

    Abstract: MJL4302A mjl 350 mjl4302
    Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:


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    MJL4281A MJL4302A MJL4281A MJL4302A MJL4281A/D mjl 350 mjl4302 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCX17LT1G, NPN BCX18LT1G, PNP BCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors PNP NPN COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR


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    BCX17LT1G, BCX18LT1G, BCX19LT1G, BCX17, BCX19 BCX18 OT-23 PDF

    MJ11015G

    Abstract: MJ11016G MJ11015 MJ11016 MJ11012 MJ11012G npn darlington transistor pnp 3015
    Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc


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    MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11012/D MJ11015G MJ11016G MJ11015 MJ11012 MJ11012G npn darlington transistor pnp 3015 PDF

    MJL4281A

    Abstract: MJL4302AG
    Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:


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    MJL4281A MJL4302A MJL4281A MJL4302A MJL4281A/D MJL4302AG PDF

    MPS651 equivalent

    Abstract: transistor mps750 MPS65 MPS650 MPS651 MPS750 MPS751
    Text: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol


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    MPS650 MPS651 MPS750 MPS751 r14525 MPS650/D MPS651 equivalent transistor mps750 MPS65 MPS650 MPS651 MPS750 MPS751 PDF

    MJE15034G

    Abstract: No abstract text available
    Text: MJE15034 NPN , MJE15035 (PNP) Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. 4.0 AMPERES POWER TRANSISTORS


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    MJE15034 MJE15035 O-220, O-220 25plicable MJE15034/D MJE15034G PDF

    MJL4302AG

    Abstract: mjl4302a mjl4281 MJL4281AG MJL4281A SEC1100 ALL TRANSISTORS
    Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:


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    MJL4281A MJL4302A MJL4281A MJL4302A O-264 MJL4281A/D MJL4302AG mjl4281 MJL4281AG SEC1100 ALL TRANSISTORS PDF

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


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    BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a PDF

    MJE15034

    Abstract: TO-220 NPN MJE15035 160-100MS mje1503x
    Text: MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com . . . designed for use as high−frequency drivers in audio amplifiers. • hFE = 100 Min @ IC = 0.5 Adc • • •


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    MJE15034 MJE15035 O-220, MJE15034, MJE15035 O-220AB MJE15034/D TO-220 NPN 160-100MS mje1503x PDF

    Untitled

    Abstract: No abstract text available
    Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency


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    MJW3281A MJW1302A MJW3281A MJW1302A MJW3281A/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MJL4281A NPN MJL4302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary: • • • • Gain Linearity from 100 mA to 5 A


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    MJL4281A MJL4302A MJL4281A MJL4302A O-264 MJL4281A/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MJE15032 NPN , MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high−frequency drivers in audio amplifiers. http://onsemi.com Features • • • • • High DC Current Gain High Current Gain − Bandwidth Product TO−220 Compact Package


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    MJE15032 MJE15033 O-220 MJE15032/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency


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    MJL3281A MJL1302A MJL3281A MJL1302A MJL3281A/D PDF

    Untitled

    Abstract: No abstract text available
    Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique


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    BCX17LT1G, BCX18LT1G, BCX19LT1G, SBCX19LT1G, BCX17, BCX19 BCX18 PDF

    MJE15035G

    Abstract: MJE15034G MJE15034 mje15
    Text: MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. Features • hFE = 100 Min @ IC = 0.5 Adc


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    MJE15034 MJE15035 O-220, MJE15034, O-220AB MJE15034/D MJE15035G MJE15034G mje15 PDF

    free home theater 2.1 circuit diagram

    Abstract: free home theater circuit diagram MJL0281A MJL0302A MJL1302A MJL3281A
    Text: MJL0281A NPN MJL0302A (PNP) Preferred Devices Complementary NPN−PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJL3281A and MJL1302A audio output transistors. With superior gain linearity and safe operating area performance, these


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    MJL0281A MJL0302A MJL3281A MJL1302A MJL0281A/D free home theater 2.1 circuit diagram free home theater circuit diagram MJL0281A MJL0302A PDF

    Untitled

    Abstract: No abstract text available
    Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary Bipolar Power Transistors Features • • • • • • http://onsemi.com Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO


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    MJL3281A MJL1302A MJL3281A/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NJW3281G NPN NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear applications. Features http://onsemi.com 15 AMPERES COMPLEMENTARY


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    NJW3281G NJW1302G NJW3281G NJW1302G NJW3281/D PDF

    10000 watts sound amplifier circuit diagram

    Abstract: No abstract text available
    Text: MJL3281A NPN MJL1302A (PNP) Complementary Bipolar Power Transistors Features • • • • • • http://onsemi.com Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO High Frequency These Devices are Pb−Free and are RoHS Compliant*


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    MJL3281A MJL1302A MJL3281A/D 10000 watts sound amplifier circuit diagram PDF

    MJW21196

    Abstract: MJW21195 npn 10000 JAPAN transistor
    Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    MJW21195 MJW21196 MJW21195 MJW21196 r14525 MJW21195/D npn 10000 JAPAN transistor PDF

    MJW-1302A

    Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn MJW1302A MJW3281A
    Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency


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    MJW3281A MJW1302A MJW3281A MJW1302A r14525 MJW3281A/D MJW-1302A NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn PDF

    SBCX19LT1G

    Abstract: SBCX19
    Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique


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    BCX17LT1G, BCX18LT1G, BCX19LT1G, SBCX19LT1G, AEC-Q101 OT-23 O-236) BCX17, BCX19 BCX18 SBCX19LT1G SBCX19 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • S and NSV Prefix for Automotive and Other Applications Requiring


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    BCX17LT1G, BCX18LT1G, BCX19LT1G, SBCX19LT1G, BCX17, BCX19 BCX18 PDF