MPS650
Abstract: MPS651 MPS65 MPS750 MPS751
Text: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol
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MPS650
MPS651
MPS750
MPS751
r14525
MPS650/D
MPS650
MPS651
MPS65
MPS750
MPS751
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MJL4281A
Abstract: MJL4302A mjl 350 mjl4302
Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:
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MJL4281A
MJL4302A
MJL4281A
MJL4302A
MJL4281A/D
mjl 350
mjl4302
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Untitled
Abstract: No abstract text available
Text: BCX17LT1G, NPN BCX18LT1G, PNP BCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors PNP NPN COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR
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BCX17LT1G,
BCX18LT1G,
BCX19LT1G,
BCX17,
BCX19
BCX18
OT-23
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MJ11015G
Abstract: MJ11016G MJ11015 MJ11016 MJ11012 MJ11012G npn darlington transistor pnp 3015
Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc
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MJ11015
MJ11012,
MJ11016
MJ11016
MJ11012
MJ11015/6
MJ11012/D
MJ11015G
MJ11016G
MJ11015
MJ11012
MJ11012G
npn darlington
transistor pnp 3015
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MJL4281A
Abstract: MJL4302AG
Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:
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MJL4281A
MJL4302A
MJL4281A
MJL4302A
MJL4281A/D
MJL4302AG
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MPS651 equivalent
Abstract: transistor mps750 MPS65 MPS650 MPS651 MPS750 MPS751
Text: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol
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MPS650
MPS651
MPS750
MPS751
r14525
MPS650/D
MPS651 equivalent
transistor mps750
MPS65
MPS650
MPS651
MPS750
MPS751
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PDF
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MJE15034G
Abstract: No abstract text available
Text: MJE15034 NPN , MJE15035 (PNP) Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. 4.0 AMPERES POWER TRANSISTORS
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MJE15034
MJE15035
O-220,
O-220
25plicable
MJE15034/D
MJE15034G
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PDF
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MJL4302AG
Abstract: mjl4302a mjl4281 MJL4281AG MJL4281A SEC1100 ALL TRANSISTORS
Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:
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MJL4281A
MJL4302A
MJL4281A
MJL4302A
O-264
MJL4281A/D
MJL4302AG
mjl4281
MJL4281AG
SEC1100
ALL TRANSISTORS
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2sc5088 horizontal transistors
Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.
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BCE0016A
3501C-0109
F-93561,
2sc5088 horizontal transistors
equivalent 2SC2655
2sc5858
2sC5200, 2SA1943
2sa1930 transistor equivalent
2SA1941 equivalent
2sc5570
zener diode SMD marking code 27 4F
2sc5200 audio amplifiers
smd transistor h2a
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MJE15034
Abstract: TO-220 NPN MJE15035 160-100MS mje1503x
Text: MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com . . . designed for use as high−frequency drivers in audio amplifiers. • hFE = 100 Min @ IC = 0.5 Adc • • •
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MJE15034
MJE15035
O-220,
MJE15034,
MJE15035
O-220AB
MJE15034/D
TO-220 NPN
160-100MS
mje1503x
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Untitled
Abstract: No abstract text available
Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
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MJW3281A
MJW1302A
MJW3281A
MJW1302A
MJW3281A/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MJL4281A NPN MJL4302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary: • • • • Gain Linearity from 100 mA to 5 A
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MJL4281A
MJL4302A
MJL4281A
MJL4302A
O-264
MJL4281A/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MJE15032 NPN , MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high−frequency drivers in audio amplifiers. http://onsemi.com Features • • • • • High DC Current Gain High Current Gain − Bandwidth Product TO−220 Compact Package
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MJE15032
MJE15033
O-220
MJE15032/D
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Untitled
Abstract: No abstract text available
Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
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MJL3281A
MJL1302A
MJL3281A
MJL1302A
MJL3281A/D
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Untitled
Abstract: No abstract text available
Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
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BCX17LT1G,
BCX18LT1G,
BCX19LT1G,
SBCX19LT1G,
BCX17,
BCX19
BCX18
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MJE15035G
Abstract: MJE15034G MJE15034 mje15
Text: MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. Features • hFE = 100 Min @ IC = 0.5 Adc
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MJE15034
MJE15035
O-220,
MJE15034,
O-220AB
MJE15034/D
MJE15035G
MJE15034G
mje15
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free home theater 2.1 circuit diagram
Abstract: free home theater circuit diagram MJL0281A MJL0302A MJL1302A MJL3281A
Text: MJL0281A NPN MJL0302A (PNP) Preferred Devices Complementary NPN−PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJL3281A and MJL1302A audio output transistors. With superior gain linearity and safe operating area performance, these
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MJL0281A
MJL0302A
MJL3281A
MJL1302A
MJL0281A/D
free home theater 2.1 circuit diagram
free home theater circuit diagram
MJL0281A
MJL0302A
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Untitled
Abstract: No abstract text available
Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary Bipolar Power Transistors Features • • • • • • http://onsemi.com Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO
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MJL3281A
MJL1302A
MJL3281A/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NJW3281G NPN NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear applications. Features http://onsemi.com 15 AMPERES COMPLEMENTARY
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NJW3281G
NJW1302G
NJW3281G
NJW1302G
NJW3281/D
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10000 watts sound amplifier circuit diagram
Abstract: No abstract text available
Text: MJL3281A NPN MJL1302A (PNP) Complementary Bipolar Power Transistors Features • • • • • • http://onsemi.com Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO High Frequency These Devices are Pb−Free and are RoHS Compliant*
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MJL3281A
MJL1302A
MJL3281A/D
10000 watts sound amplifier circuit diagram
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MJW21196
Abstract: MJW21195 npn 10000 JAPAN transistor
Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com
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MJW21195
MJW21196
MJW21195
MJW21196
r14525
MJW21195/D
npn 10000
JAPAN transistor
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MJW-1302A
Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn MJW1302A MJW3281A
Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
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MJW3281A
MJW1302A
MJW3281A
MJW1302A
r14525
MJW3281A/D
MJW-1302A
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
10000 npn
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SBCX19LT1G
Abstract: SBCX19
Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
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BCX17LT1G,
BCX18LT1G,
BCX19LT1G,
SBCX19LT1G,
AEC-Q101
OT-23
O-236)
BCX17,
BCX19
BCX18
SBCX19LT1G
SBCX19
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PDF
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Untitled
Abstract: No abstract text available
Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • S and NSV Prefix for Automotive and Other Applications Requiring
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BCX17LT1G,
BCX18LT1G,
BCX19LT1G,
SBCX19LT1G,
BCX17,
BCX19
BCX18
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