NPN CENTER BASE TRANSISTORS Search Results

NPN CENTER BASE TRANSISTORS Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TMPM3HMFYAFG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003
TMPM3HPFYADFG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001
TMPM3HLFYAUG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003
TMPM3HNFZAFG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002

NPN CENTER BASE TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MPS650 Abstract: MPS651 MPS65 MPS750 MPS751 Text: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol	Original	PDF	MPS650 MPS651 MPS750 MPS751 r14525 MPS650/D MPS650 MPS651 MPS65 MPS750 MPS751
MJL4281A Abstract: MJL4302A mjl 350 mjl4302 Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:	Original	PDF	MJL4281A MJL4302A MJL4281A MJL4302A MJL4281A/D mjl 350 mjl4302
Untitled Abstract: No abstract text available Text: BCX17LT1G, NPN BCX18LT1G, PNP BCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors PNP NPN COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR	Original	PDF	BCX17LT1G, BCX18LT1G, BCX19LT1G, BCX17, BCX19 BCX18 OT-23
MJ11015G Abstract: MJ11016G MJ11015 MJ11016 MJ11012 MJ11012G npn darlington transistor pnp 3015 Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc	Original	PDF	MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11012/D MJ11015G MJ11016G MJ11015 MJ11012 MJ11012G npn darlington transistor pnp 3015
MJL4281A Abstract: MJL4302AG Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:	Original	PDF	MJL4281A MJL4302A MJL4281A MJL4302A MJL4281A/D MJL4302AG
MPS651 equivalent Abstract: transistor mps750 MPS65 MPS650 MPS651 MPS750 MPS751 Text: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol	Original	PDF	MPS650 MPS651 MPS750 MPS751 r14525 MPS650/D MPS651 equivalent transistor mps750 MPS65 MPS650 MPS651 MPS750 MPS751
MJE15034G Abstract: No abstract text available Text: MJE15034 NPN , MJE15035 (PNP) Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. 4.0 AMPERES POWER TRANSISTORS	Original	PDF	MJE15034 MJE15035 O-220, O-220 25plicable MJE15034/D MJE15034G
MJL4302AG Abstract: mjl4302a mjl4281 MJL4281AG MJL4281A SEC1100 ALL TRANSISTORS Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:	Original	PDF	MJL4281A MJL4302A MJL4281A MJL4302A O-264 MJL4281A/D MJL4302AG mjl4281 MJL4281AG SEC1100 ALL TRANSISTORS
2sc5088 horizontal transistors Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.	Original	PDF	BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
MJE15034 Abstract: TO-220 NPN MJE15035 160-100MS mje1503x Text: MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com . . . designed for use as high−frequency drivers in audio amplifiers. • hFE = 100 Min @ IC = 0.5 Adc • • •	Original	PDF	MJE15034 MJE15035 O-220, MJE15034, MJE15035 O-220AB MJE15034/D TO-220 NPN 160-100MS mje1503x
Untitled Abstract: No abstract text available Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A MJW3281A/D
Untitled Abstract: No abstract text available Text: MJL4281A NPN MJL4302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary: • • • • Gain Linearity from 100 mA to 5 A	Original	PDF	MJL4281A MJL4302A MJL4281A MJL4302A O-264 MJL4281A/D
Untitled Abstract: No abstract text available Text: MJE15032 NPN , MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high−frequency drivers in audio amplifiers. http://onsemi.com Features • • • • • High DC Current Gain High Current Gain − Bandwidth Product TO−220 Compact Package	Original	PDF	MJE15032 MJE15033 O-220 MJE15032/D
Untitled Abstract: No abstract text available Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJL3281A MJL1302A MJL3281A MJL1302A MJL3281A/D

Untitled Abstract: No abstract text available Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique	Original	PDF	BCX17LT1G, BCX18LT1G, BCX19LT1G, SBCX19LT1G, BCX17, BCX19 BCX18
MJE15035G Abstract: MJE15034G MJE15034 mje15 Text: MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. Features • hFE = 100 Min @ IC = 0.5 Adc	Original	PDF	MJE15034 MJE15035 O-220, MJE15034, O-220AB MJE15034/D MJE15035G MJE15034G mje15
free home theater 2.1 circuit diagram Abstract: free home theater circuit diagram MJL0281A MJL0302A MJL1302A MJL3281A Text: MJL0281A NPN MJL0302A (PNP) Preferred Devices Complementary NPN−PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJL3281A and MJL1302A audio output transistors. With superior gain linearity and safe operating area performance, these	Original	PDF	MJL0281A MJL0302A MJL3281A MJL1302A MJL0281A/D free home theater 2.1 circuit diagram free home theater circuit diagram MJL0281A MJL0302A
Untitled Abstract: No abstract text available Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary Bipolar Power Transistors Features • • • • • • http://onsemi.com Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO	Original	PDF	MJL3281A MJL1302A MJL3281A/D
Untitled Abstract: No abstract text available Text: NJW3281G NPN NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear applications. Features http://onsemi.com 15 AMPERES COMPLEMENTARY	Original	PDF	NJW3281G NJW1302G NJW3281G NJW1302G NJW3281/D
10000 watts sound amplifier circuit diagram Abstract: No abstract text available Text: MJL3281A NPN MJL1302A (PNP) Complementary Bipolar Power Transistors Features • • • • • • http://onsemi.com Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO High Frequency These Devices are Pb−Free and are RoHS Compliant*	Original	PDF	MJL3281A MJL1302A MJL3281A/D 10000 watts sound amplifier circuit diagram
MJW21196 Abstract: MJW21195 npn 10000 JAPAN transistor Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	PDF	MJW21195 MJW21196 MJW21195 MJW21196 r14525 MJW21195/D npn 10000 JAPAN transistor
MJW-1302A Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn MJW1302A MJW3281A Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A r14525 MJW3281A/D MJW-1302A NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn
SBCX19LT1G Abstract: SBCX19 Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique	Original	PDF	BCX17LT1G, BCX18LT1G, BCX19LT1G, SBCX19LT1G, AEC-Q101 OT-23 O-236) BCX17, BCX19 BCX18 SBCX19LT1G SBCX19
Untitled Abstract: No abstract text available Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • S and NSV Prefix for Automotive and Other Applications Requiring	Original	PDF	BCX17LT1G, BCX18LT1G, BCX19LT1G, SBCX19LT1G, BCX17, BCX19 BCX18

NPN CENTER BASE TRANSISTORS Search Results

NPN CENTER BASE TRANSISTORS Result Highlights (6)

NPN CENTER BASE TRANSISTORS Datasheets Context Search

MPS650

MJL4281A

Untitled

MJ11015G

MJL4281A

MPS651 equivalent

MJE15034G

MJL4302AG

2sc5088 horizontal transistors

MJE15034

Untitled

Untitled

Untitled

Untitled

Untitled

MJE15035G

free home theater 2.1 circuit diagram

Untitled

Untitled

10000 watts sound amplifier circuit diagram

MJW21196

MJW-1302A

SBCX19LT1G

Untitled