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    NPN C6011 Search Results

    NPN C6011 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN C6011 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sanken c6011

    Abstract: 2SC4832 c6011 2SC6011 c6011 transistor NPN c6011 2SA2151 sanken audio "Sanken Rectifiers" "Sanken Electric"
    Text: 2SC6011 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


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    2SC6011 2SA2151 2SC4832 sanken c6011 2SC4832 c6011 c6011 transistor NPN c6011 2SA2151 sanken audio "Sanken Rectifiers" "Sanken Electric" PDF

    c6011a

    Abstract: 2SC6011A 2sc4382a 2SA2151A c6011 C6011A OR ITS EQUIVALENT SANKEN AUDIO Sanken Transistor Mt 200 NPN c6011a G746
    Text: 2SC6011A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


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    2SC6011A SSE-23015 c6011a 2SC6011A 2sc4382a 2SA2151A c6011 C6011A OR ITS EQUIVALENT SANKEN AUDIO Sanken Transistor Mt 200 NPN c6011a G746 PDF

    2SC4832

    Abstract: c6011 sanken c6011 2sc6011 Sanken Transistor Mt 200 2SA2151 sanken high power audio amplifier SANKEN AUDIO c6011 transistor 2SA21
    Text: 2SC6011 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


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    2SC6011 SSE-23013 2SC4832 c6011 sanken c6011 2sc6011 Sanken Transistor Mt 200 2SA2151 sanken high power audio amplifier SANKEN AUDIO c6011 transistor 2SA21 PDF

    c6011a

    Abstract: 2SC6011A SANKEN AUDIO NPN c6011a sanken power transistor
    Text: 2SC6011A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


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    2SC6011A 2SA2151A 2SC4382A c6011a SANKEN AUDIO NPN c6011a sanken power transistor PDF

    c6011a

    Abstract: NPN c6011a
    Text: 2SC6011A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


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    2SC6011A SSE-23015 c6011a NPN c6011a PDF

    2SC4832

    Abstract: 2SA2151
    Text: 2SC6011 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


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    2SC6011 SSE-23013 2SC4832 2SA2151 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC6011 Audio Amplification Transistor Features and Benefits Description Small package TO-3P High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 200 V versions available


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    2SC6011 2SA2151 2SC4832 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC6011A Audio Amplification Transistor Features and Benefits Description Small package TO-3P High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 230 V versions available


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    2SC6011A 2SA2151A 2SC4382A PDF

    fgt313

    Abstract: c5287 equivalent transistor B1560 equivalent 2sk2079 c4381 FGT412 SLA4052 c5287 C4381 equivalent c3852a
    Text: Transistors 2 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 150 Application Note . 152


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    PDF

    2SC5586 equivalent

    Abstract: c5287 equivalent transistor SLA4052 2SK3003 equivalent B1560 equivalent c4468 power transistor equivalent D2141 equivalent D2045 c4381 C3852
    Text: Transistors 2 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 144 Application Note . 146


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    SLA21Pin) 2SC5586 equivalent c5287 equivalent transistor SLA4052 2SK3003 equivalent B1560 equivalent c4468 power transistor equivalent D2141 equivalent D2045 c4381 C3852 PDF

    c4468 power transistor equivalent

    Abstract: c5287 equivalent transistor c4381 power transistor equivalent SLA5096 transistor c5287 circuit diagram sla5212 B1560 equivalent c4131 equivalent transistor C4300 transistor pin out c3856
    Text: Transistors 2 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 154 Application Note . 156


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    SLA15Pin) c4468 power transistor equivalent c5287 equivalent transistor c4381 power transistor equivalent SLA5096 transistor c5287 circuit diagram sla5212 B1560 equivalent c4131 equivalent transistor C4300 transistor pin out c3856 PDF

    VT8362

    Abstract: CP2216 VR501 TM41PUM220 kn133 RLS414B B1225 PCI1420 F3437 p4 Titan VRM 10.0
    Text:    7321              7321 N/B Maintenance Contents Contents 1. Hardware Engineering Specification 4 1.1 Introduction 4 1.2 System Hardware Parts 1.3 Other Functions


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    FD500 DOT040 DOT040 PC500 PR500 FD503 FD502 VT8362 CP2216 VR501 TM41PUM220 kn133 RLS414B B1225 PCI1420 F3437 p4 Titan VRM 10.0 PDF

    transistor C9012

    Abstract: transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015
    Text: APPLICATION NOTE The GTV1000 Global TV Receiver AN98051 Quvyvƒ†ÃTr€ vp‚qˆp‡‚…† The GTV1000 Global TV Receiver Application Note AN98051 Abstract The GTV1000 receiver has been designed around the TDA884X TV signal processor. The large signal part is suited for 90° picture tubes and build on one board with the small signal part.


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    GTV1000 AN98051 GTV1000 TDA884X C9029 220uF C6004 transistor C9012 transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015 PDF

    transistor BU 102S

    Abstract: fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096
    Text: SEMICONDUCTORS GENERAL CATALOG 2010 Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China


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    H1-O03EE0-1004015ND transistor BU 102S fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096 PDF

    SK 18752

    Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
    Text: Bulletin No O03ED0 (May, 2008) SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,


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    O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751 PDF

    SD MOSFET DRIVE DATASHEET 4468 8 PIN

    Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
    Text: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话:81-3-3986-6164 传真:81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720


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    O03CC0 Room3202, H1-O03CC0-1008031NM SD MOSFET DRIVE DATASHEET 4468 8 PIN SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012 PDF

    rjp 6065

    Abstract: RJP 3045 ACS758 tda 7304 sla6805m OHD 3- 105M SLA6805MP tda 3640 pin diode tda 1053 ACS758LCB
    Text: Bulletin No O03JF0 (Jan.,2010) 半導体総合カタログ I C トランジ スタ サ イリスタ ダ イオ ード サンケン電気株式会社 http://www.sanken-ele.co.jp 注意 ● 本書に記載されている内容は改良などにより予告なく変更することがありますので、最新の情報


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    O03JF0 Room1013, H1-O03JF0-1001025ND rjp 6065 RJP 3045 ACS758 tda 7304 sla6805m OHD 3- 105M SLA6805MP tda 3640 pin diode tda 1053 ACS758LCB PDF

    STRW6252

    Abstract: STRW6052s strw6053 STR-W6052S STR-W6053S STRV152 STRW6251 strx6750 strw6053s STRW6253
    Text: Bulletin No O03JG0 (Jan.,2011) 半導体総合カタログ I C トランジ スタ サ イリスタ ダ イオ ード サンケン電気株式会社 この認証基準に基づいた厳格な品質管理体制 ISO9001/14001 を取得 サンケン電気の製品は、


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    O03JG0 ISO9001/14001 0339866166FAX 0663128716FAX 0664504400FAX 0525812767FAX B-20-5, H1-O03JG0-1101025ND STRW6252 STRW6052s strw6053 STR-W6052S STR-W6053S STRV152 STRW6251 strx6750 strw6053s STRW6253 PDF

    SK 18752

    Abstract: 2SC5586 SK 18751 sla6101 sk c4467 STR20012 SLA6102 sk A1186 SK C5071 fn651
    Text: SANKEN 半导体 CONTENTS 目 录 1 集成电路 1-1 1-2 2 1-1-2 开关式稳压集成电路 . 41 1-1-3 多路输出型稳压集成电路 . 93


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    TF320M TF341M TF320M-A TF321M-A TF321M TF325P TF341S TF521M TF521S SK 18752 2SC5586 SK 18751 sla6101 sk c4467 STR20012 SLA6102 sk A1186 SK C5071 fn651 PDF