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    NPN C105 Search Results

    NPN C105 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    NPN C105 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C101-C104

    Abstract: C101 C104 AG SMD TRANSISTOR
    Text: MMBTRC101SS . MMBTRC106SS MMBTRC101SS . MMBTRC106SS Surface Mount Bias Resistor Transistors SMD Transistoren mit Eingangsspannungsteiler NPN NPN Version 2011-02-10 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse


    Original     		PDF MMBTRC101SS MMBTRC106SS OT-23 O-236) UL94V-0 C101-C104 C101 C104 AG SMD TRANSISTOR

    C10535E

    Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
    Text: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT Heterojunction Bipolar Transistor developed for L to S band mobile communication equipment. FEATURES


    Original     		PDF NE52418 NE52418 OT-343 NE52418-T1 C10535E NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN

    transistor marking T79 ghz

    Abstract: marking T79 MARKING T79 "NPN Transistor" 2SC5508 2SC5508-T2 C10535E transistor marking T79
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA


    Original     		PDF 2SC5508 2SC5508-T2 transistor marking T79 ghz marking T79 MARKING T79 "NPN Transistor" 2SC5508 2SC5508-T2 C10535E transistor marking T79

    33 nec 125 t2

    Abstract: transistor marking T78 ghz C10535E NE661M04 NE661M04-T2
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA


    Original     		PDF NE661M04 NE661M04-T2 33 nec 125 t2 transistor marking T78 ghz C10535E NE661M04 NE661M04-T2

    2SC5507-T2

    Abstract: transistor NEC 882 p 2SC5507 C10535E transistor marking T78 ghz
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA


    Original     		PDF 2SC5507 2SC5507-T2 2SC5507-T2 transistor NEC 882 p 2SC5507 C10535E transistor marking T78 ghz

    NEC 1357

    Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz


    Original     		PDF 2SC5509 2SC5509-T2 NEC 1357 2SC5509 2SC5509-T2 C10535E 487 4PIN

    CON34A

    Abstract: j301 U501D CR403 CR109 74LVC125 R337 U301D GP22 U304B
    Text: 1 2 3 4 RING TIP - + 10 - + CR403 FL403 F100 C101 J500-29 IOC1 LINE_RELAY 6 5 9 4 11 4 11 10 CR106 D? A CR109 CR105 324 7 U304B 324 8 LINE+ LINE- VOICE/DATA C100 CR109 SSR R128 620 R105 20 R104 75K R103 56K Q101 5VA + C105 4.7uF Q100 NPN 10K R102 11 1 T?


    Original     		PDF CR403 FL403 J500-29 CR106 CR109 CR105 U304B U501A U501B CON34A j301 U501D CR403 CR109 74LVC125 R337 U301D GP22 U304B

    4 npn transistor ic 14pin

    Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
    Text: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation


    Original     		PDF PA104 PA104B: PA104G: 14-pin PA104 4 npn transistor ic 14pin lowest noise audio NPN transistor C10535E MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY

    4 npn transistor ic 14pin

    Abstract: C10535E PA103 lowest noise audio NPN transistor
    Text: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:


    Original     		PDF PA103 PA103B: PA103G: 14-pin PA103 4 npn transistor ic 14pin C10535E lowest noise audio NPN transistor

    C10535E

    Abstract: C11531E fb1l3n
    Text: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive


    Original     		PDF C11531E) C10535E C11531E fb1l3n

    4 npn transistor ic 14pin

    Abstract: 8 npn transistor ic 14pin C10535E UPA102G
    Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package


    Original     		PDF PA102 PA102B: 14-pin PA102G: PA102 4 npn transistor ic 14pin 8 npn transistor ic 14pin C10535E UPA102G

    4 npn transistor ic 14pin

    Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
    Text: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package


    Original     		PDF PA101 PA101B: 14-pin PA101G: PA101B-E1 4 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6

    D1062

    Abstract: 2SD2582 C10535E C10943X MEI-1202 965 ic data
    Text: DATA SHEET SILICON TRANSISTOR 2SD2582 AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) Collector to Base Voltage Collector to Emitter Voltage VCB0 VCE0 30 V 30 V Emitter to Base Voltage


    Original     		PDF 2SD2582 D1062 2SD2582 C10535E C10943X MEI-1202 965 ic data

    7415 ic pin details

    Abstract: C10535E NE52118 NE52118-T1
    Text: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω


    Original     		PDF NE52118 NE52118-T1 7415 ic pin details C10535E NE52118 NE52118-T1

    HD965

    Abstract: 2SD965 C105B transistor NPN TO-92 Vebo6v
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 965 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C105BJ-01 芯片厚度：240±20µm 管芯尺寸：1050x1050µm 2 焊位尺寸：B 极 280×345µm 2；E 极 275×415µm 2


    Original     		PDF 100mm C105BJ-01 2SD965HD965 30VIE HD965 2SD965 C105B transistor NPN TO-92 Vebo6v

    a4w SD transistor

    Abstract: transistor PNP C124 diode a4W a4w transistor H7CX-AUD1 transistor NPN c115 omron h7cx C-107 C-118 H7CX-A114D1
    Text: Multifunction Preset Counter H7CX Counters • Highly visible display with backlit negative transmissive LCD. • Programmable PV color to visually alert when output status changes screw terminal block models . • Intuitive setting enabled using ergonomic up/down digit keys (4digit models) and DIP switch.


    Original     		PDF NEMA4/IP66 /10kh= C-129 a4w SD transistor transistor PNP C124 diode a4W a4w transistor H7CX-AUD1 transistor NPN c115 omron h7cx C-107 C-118 H7CX-A114D1

    CA6V

    Abstract: audio taper potentiometer 100k cts capacitor 470uf 25v 470uF/ 25V capacitor 10K CA6V CR0805-10W-1001FT C144 DIGITAL NPN TRANSISTOR AKM4114 transistor SOT23 PJ6 AFM2
    Text: Freescale Semiconductor Users Guide DSPAUDIOEVM Users Guide This document contains information on a new product. Specifications and information herein are subject to change without notice. Freescale Semiconductor, Inc., 2004. All rights reserved. DSPAUDIOEVMUG


    Original     		PDF

    panasonic inverter 707 manual

    Abstract: traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor
    Text: User’s Manual 78K0/IB2 Fluorescent Ballast Evaluation Board Target Device 78K0/IB2 Microcontroller ZBB-CE-09-0011-E Data Published March 2009 NEC Electronics Corporation 1/25 The information in this document is current as of March, 2009. The information is subject to change


    Original     		PDF 78K0/IB2 78K0/IB2 ZBB-CE-09-0011-E TC74VHC125F TC74VHC14F 3386F-1-104TLF CMR309T-16 000MABJ-UT panasonic inverter 707 manual traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor

    Untitled

    Abstract: No abstract text available
    Text: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current


    OCR Scan     		PDF 2SC5507 2SC5507 2SC5507-T2

    transistor marking T79 ghz

    Abstract: TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz
    Text: dò l o X , , 1 PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications


    OCR Scan     		PDF 2SC5508 2SC5508 2SC5508-T2 transistor marking T79 ghz TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz

    C10500

    Abstract: No abstract text available
    Text: OPTEK Product Bulletin JANTX, JANTXV, 2N4854U September 1996 Surface Mount NPN/PNP Complementary Transistors Type JANTX, JANTXV, 2N4854U Features • C eram ic surface mount package • Miniature package to minimize circuit board area required • Herm etically sealed


    OCR Scan     		PDF 2N4854U c10500 C10500

    D1088

    Abstract: 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33
    Text: v ' J = i > h 7 > ÿ ^ Silic o n T ra n sisto r 2SC2001 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier 4$ ^JK S /P A C K A G E DIMENSIONS »/F E A T U R E S U nit : mm 5.2 MAX. < , S hFE -r U t f f c / J o Pt = 600 mW L s 7 f if à f t m æ T T o


    OCR Scan     		PDF 2SC2001 02SA952tl SC-43B D11738JJ3V0DS00 10lfllAfl D1088 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33

    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


    OCR Scan     		PDF 0HF40 0HF60 0HF80 6FP10 6F100 70HF10 UAA2001 MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402

    bd7995

    Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
    Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND


    OCR Scan     		PDF 8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361