BFG135 amplifier
Abstract: BFG135 BFG135 - BFG135 MBB300
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor
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BFG135
OT223
CGY2020G
SCA50
647021/1200/01/pp12
BFG135 amplifier
BFG135
BFG135 - BFG135
MBB300
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BFG35
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
125006/03/pp16
BFG35
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BFG198
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a
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BFG198
OT223
MSB002
OT223.
CGY2020G
SCA50
647021/1200/01/pp12
BFG198
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PNP 2N4403
Abstract: 2N4401 2n4403 configuration 2N4403 2N4401 520 2n4401 configuration
Text: 2N4401 & 2N4403 General Purpose Switching Transistors Features: • NPN/PNP Silicon Planar Epitaxial Transistors. • General purpose Switching Applications. • 2N 4401 Type NPN. • 2N 4403 Type PNP. 2N4401 NPN TO-92 2N4403 PNP Dimensions Minimum Maximum
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2N4401
2N4403
2N4401
2N4403
PNP 2N4403
2n4403 configuration
2N4401 520
2n4401 configuration
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str 6707
Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.
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M3D067
BF859
O-202
MBH794
O-202)
SCA63
115002/00/03/pp8
str 6707
philips 23
2108 npn transistor
ic str 6707
TO-202 transistor NPN
BF859
BP317
D-20097
transistor d 2333
philips ltd 202
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MID-95A3LH
Abstract: No abstract text available
Text: SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR MID-95A3LH Description Package Dimensions Unit: mm inches 1.50 (.059 The MID-95A3LH is a TWIN NPN silicon phototransistor mounted in a special dark plastic side looking package and suitable for the IRED (940nm) Type.
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MID-95A3LH
MID-95A3LH
940nm)
00MIN
00MIN.
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MID-95A3L
Abstract: twin Phototransistor
Text: SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR MID-95A3L Description Package Dimensions 1.50 .059 The MID-95A3L is a TWIN NPN silicon phototransistor Unit: mm ( inches ) mounted in a special dark plastic side looking package and suitable for the IRED (940nm) Type.
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MID-95A3L
MID-95A3L
940nm)
00MIN
00MIN.
twin Phototransistor
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94A3
Abstract: MID-94A3L
Text: SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR MID-94A3L Description Package Dimensions Unit : mm The MID-94A3L is a TWIN NPN silicon phototransistor mounted in a special dark plastic side looking package and suitable for the IRED 940nm Type. 3.00 ± .08 (.118±.003)
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MID-94A3L
MID-94A3L
940nm)
00MIN
94A3
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2854K
Abstract: LA12 SLR-50HL1 SLR-50HL2 SLR-50HL3 SLR-50HL4 2854-K
Text: SLR-50HL Series NPN Photodarlington Features • Narrow receiving angle • Spectrally matched to IRED • NPN planar epitaxial process • TO-18 hermetic dome lens package • Multiple sensitivity ranges • Extended temperature range Description The SLR-50HL series consists of an NPN silicon
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SLR-50HL
2854K
LA12
SLR-50HL1
SLR-50HL2
SLR-50HL3
SLR-50HL4
2854-K
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94A4
Abstract: MID-94A46
Text: SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR Description Package Dimensions Unit : mm The MID-94A46 is a two bits NPN silicon phototransistor mounted in a special dark plastic side looking package 5.00 ± .08 3.00 ± .08 NOTE 2 and suitable for the IRED 940nm Type.
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MID-94A46
940nm)
94A4
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2N3704
Abstract: 2N3705 transistor 2n3704 equivalent transistor 2n3704 2N3704 transistor
Text: 2N3704 & 2N3705 General Purpose Transistor Description: • NPN Silicon Planar Epitaxial Transistors. 2N3704 NPN 2N3705 NPN TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H 5° 1.14 1.40 1.53
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2N3704
2N3705
2N3704
2N3705
transistor 2n3704
equivalent transistor 2n3704
2N3704 transistor
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SFH 3410
Abstract: No abstract text available
Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3410 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 940 nm • Angepaßt an die Augenempfindlichkeit (Vλ)
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Q65110A1211
Q65110A2653
Q65110A2654
Q65110A2655
SFH 3410
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rf amplifier marking catalog
Abstract: No abstract text available
Text: Philips Semiconductors; MZ0912B50Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MZ0912B50Y; NPN microwave power transistor General Description Blockdiagram
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MZ0912B50Y;
MZ0912B50Y
01-Jul-98)
rework/mz0912b50y
rf amplifier marking catalog
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740C3
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y
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MX0912B100Y;
MZ0912B100Y
MX0912B100Y
OT439
OT443
740C3
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES
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MX0912B100Y;
MZ0912B100Y
SCA53
127147/00/02/pp12
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339 marking code SMD transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor Preliminary specification 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC114EEF FEATURES • Power dissipation comparable to
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M3D425
PDTC114EEF
SC-89
OT490)
PDTA114EEF.
SCA60
115104/00/01/pp8
339 marking code SMD transistor
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y
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MX0912B100Y;
MZ0912B100Y
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES
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M3D173
PDTC123JE
SC-75
OT416)
PDTA123JE.
MGA893
PDTC123JE
SCA56
117047/1200/01/pp8
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2N3662
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (SA T ) hF E M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3662
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:
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2SC2933
2SC2933
940MHz
900MHz,
900MHz
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BF115
Abstract: BF 145 transistor transistor bf 175 transistor bf 910 transistor 115 thomson tuners C22E transistor CD 910 oscillateur V12EC
Text: BF 115 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L The NPN plan epitaxial transistor BF 115 is intended for use in front-end and oscillatormixer stages of FM tuners and generally for all HF uses. Le transistor NPN " plan é p ita xia l" BF 115 est desti
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-c12e
-V12eCC)
----C22e
BF115
BF 145 transistor
transistor bf 175
transistor bf 910
transistor 115
thomson tuners
C22E
transistor CD 910
oscillateur
V12EC
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Philips electrolytic 106 screw
Abstract: STR aluminium electrolytic capacitor
Text: DISCRETE SEMICONDUCTORS RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 Philips Semiconductors 1997 Feb 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y
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RX1214B350Y
RX1214B350Y
SCA53
127147/00/02/pp12
Philips electrolytic 106 screw
STR aluminium electrolytic capacitor
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PDTC114TU NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor
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PDTC114TU
OT323
PDTC114TU
SCA63
5002/00/03/pp8
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MARKING SMD pnp TRANSISTOR ec
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PDTC124XEF NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor
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PDTC124XEF
PDTC124XEF
SCA64
5002/00/02/pp8
MARKING SMD pnp TRANSISTOR ec
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