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    NPN 80V 3A Search Results

    NPN 80V 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN 80V 3A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    VCEO80V

    Abstract: FMMT620 FMMT620TA FMMT620TC
    Text: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users


    Original     		FMMT620 INFORMA26100 VCEO80V FMMT620 FMMT620TA FMMT620TC PDF

    FMMT620

    Abstract: 450-170 FMMT620TA FMMT620TC PD6255 DSA003701
    Text: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users


    Original     		FMMT620 INFOR43-7100 FMMT620 450-170 FMMT620TA FMMT620TC PD6255 DSA003701 PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A


    Original     		ZXTC6720MC ZXTDE4M832 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A


    Original     		ZXTC6720MC 185mV -220mV DS31929 PDF

    DFN3020

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A


    Original     		ZXTC6720MC 185mV -220mV DS31929 DFN3020 PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTN620MA ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package


    Original     		ZXTN620MA ZXTEM322 MLP322 PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A


    Original     		ZXTC6720MC ZXTDE4M832 PDF

    log sheet air conditioning

    Abstract: MLP322 ZXTEM322 ZXTEM322TA ZXTEM322TC
    Text: ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


    Original     		ZXTEM322 MLP322 log sheet air conditioning MLP322 ZXTEM322 ZXTEM322TA ZXTEM322TC PDF

    1128 marking

    Abstract: MLP322 ZXTEM322 ZXTEM322TA ZXTEM322TC npn 2222
    Text: ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


    Original     		ZXTEM322 MLP322 S26100 1128 marking MLP322 ZXTEM322 ZXTEM322TA ZXTEM322TC npn 2222 PDF

    "dual TRANSISTORs" pnp npn

    Abstract: dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034
    Text: ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


    Original     		ZXTDE4M832 "dual TRANSISTORs" pnp npn dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034 PDF

    DFN3020B-8

    Abstract: ZXTC6719MC ZXTC6720MC ZXTC6720MCTA
    Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 80V • RSAT = 68 mΩ • IC = 3.5A PNP Transistor


    Original     		ZXTC6720MC -185mV DFN3020B-8 J-STD-020 MIL-STD-202, ZXTC6719MC DS31929 DFN3020B-8 ZXTC6719MC ZXTC6720MC ZXTC6720MCTA PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTN620MA ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


    Original     		ZXTN620MA ZXTEM322 MLP322 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCX5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features     BVCEO > 80V Ic = 1A High Continuous Collector Current


    Original     		BCX5616Q 500mV BCX5316Q AEC-Q101 DS37024 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green DXT5616U 80V NPN MEDIUM POWER TRANSISTOR IN TO126 Features Mechanical Data •    BVCEO > 80V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current Low Saturation Voltage VCE sat < 500mV @ 0.5A


    Original     		DXT5616U 500mV MIL-STD-202, 400mg DS37030 PDF

    NTE56

    Abstract: No abstract text available
    Text: NTE56 Silicon NPN Transistor High Gain Switch and Pass Regulator Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		NTE56 NTE56 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT620 80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 80V VSAT = 90mΩ IC = 1.5A Low Equivalent On Resistance Low Saturation Voltage


    Original     		FMMT620 AEC-Q101 OT-23 J-STD-020 DS32123 PDF

    datasheet ic 331

    Abstract: 331 transistor NPN/transistor C 331 NTE56
    Text: NTE56 Silicon NPN Transistor High Gain Switch and Pass Regulator Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V


    Original     		NTE56 datasheet ic 331 331 transistor NPN/transistor C 331 NTE56 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT620 80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > 80V IC = 1.5A Continuous Collector Current RCE SAT = 90mΩ for a low equivalent On-Resistance


    Original     		FMMT620 625mW AEC-Q101 J-STD-020 MIL-STD-202, DS33113 PDF

    ZXTN

    Abstract: DFN2020B-3 ZXTN620MA ZXTN620MATA
    Text: A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SA TURA TION TRAN SISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 80V RSAT = 68 mΩ IC = 3.5A Continuous Collector Current Low Equivalent On Resistance


    Original     		ZXTN620MA 185mV DFN2020B-3 J-STD-020 DS31894 ZXTN DFN2020B-3 ZXTN620MA ZXTN620MATA PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 80V IC = 3.5A Continuous Collector Current Low Saturation Voltage 185mV max @ 1A


    Original     		ZXTN620MA 185mV AEC-Q101 DFN2020B-3 DS31894 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 80V IC = 3.5A Continuous Collector Current Low Saturation Voltage 185mV max @ 1A


    Original     		ZXTN620MA 185mV AEC-Q101 DFN2020B-3 DS31894 PDF

    BUY41

    Abstract: No abstract text available
    Text: BUY41 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		BUY41 O205AD) 1-Aug-02 BUY41 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUY41 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		BUY41 O205AD) 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5335 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		2N5335 O205AD) 17-Jul-02 PDF