2N5339
Abstract: P008B
Text: 2N5339 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A. TO-39 INTERNAL SCHEMATIC DIAGRAM
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2N5339
2N5339
P008B
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free transistor and ic equivalent data
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD USS4350 NPN SILICON TRANSISTOR 50V, 5A NPN LOW VCE SAT TRANSISTOR DESCRIPTION The UTC USS4350 is a low VCE (SAT) NPN transistor designed for applications, such as: DC/DC converter, supply line switching, battery charger, linear voltage regulation, driver in low supply
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USS4350
USS4350
USS5350
USS4350L-AA3-R
USS4350G-AA3-R
USS4350L-AB3-R
USS4350G-AB3-R
QW-R207-022
free transistor and ic equivalent data
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Inductive Load Driver
Abstract: USS4
Text: UNISONIC TECHNOLOGIES CO., LTD USS4350 Preliminary NPN SILICON TRANSISTOR 50V, 5A NPN LOW VCE SAT TRANSISTOR DESCRIPTION The UTC USS4350 is a low VCE (SAT) NPN transistor designed for applications, such as: DC/DC converter, supply line switching, battery charger, linear voltage regulation, driver in low supply
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USS4350
USS4350
USS5350
USS4350G-AA3-R
USS4350G-AB3-R
OT-223
OT-89
QW-R207-022
Inductive Load Driver
USS4
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD USS4350 Preliminary NPN SILICON TRANSISTOR 50V, 5A NPN LOW VCE SAT TRANSISTOR DESCRIPTION The UTC USS4350 is a low VCE (SAT) NPN transistor designed for applications, such as: DC/DC converter, supply line switching, battery charger, linear voltage regulation, driver in low supply
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USS4350
USS4350
USS5350
USS4350G-AA3-R
OT-223
QW-R207-022
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USS4450
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD USS4450 NPN SILICON TRANSISTOR 50V, 5A NPN LOW VCE SAT TRANSISTOR DESCRIPTION The UTC USS4450 is a NPN transistor with low VCEsat. It has high collector current IC, ICM performance. This device can be used in power management applications, such as DC/DC converters,
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USS4450
USS4450
QW-R209-026
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BU941
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM
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BU941
BU941L-T3P-T
BU941G-T3P-T
BU941L-TA3-T
BU941G-TA3-T
BU941L-TQ2-T
BU941G-TQ2-T
BU941L-TQ2-R
BU941G-TQ2-R
O-220
BU941
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vbe 10v, vce 500v NPN Transistor
Abstract: transistor ignition circuit bu941
Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM
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BU941
BU941-T3P-T
BU941L-T3P-T
BU941-TA3-T
BU941L-TA3-T
BU941-TQ2-T
BU941L-TQ2-T
BU941-TQ2-R
BU941L-TQ2-R
O-220
vbe 10v, vce 500v NPN Transistor
transistor ignition circuit bu941
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM
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BU941Z
BU941ZL-T3P-T
BU941ZG-T3P-T
BU941ZL-TA3-T
BU941ZG-TA3-T
BU941ZL-TQ2-T
BU941ZG-TQ2-T
BU941ZL-TQ2-R
BU941ZG-TQ2-R
O-220
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 Preliminary NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application.
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BTC1510F3
BTC1510F3
BTC1510F3L-TN3-T
BTC1510F3G-TN3-T
BTC1510F3L-TN3-R
BTC1510F3G-TN3-R
BTC1510F3L-TQ2-T
BTC1510F3G-TQ2-T
BTC1510F3L-TQ2-R
BTC1510F3G-TQ2-R
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hFE-100
Abstract: NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941
Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode APPLICATIONS TO-3P * High ruggedness electric ignitions 1: BASE 2:COLLECTOR 3: EMITTER
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BU941
QW-R214-004
hFE-100
NPN Transistor 10A 24V
utc 1018
5v 10a dc driver ic
NPN power Transistor 10A 24V
hFE100
VCE-500V
npn high voltage transistor 500v 8a
24v switching transistor
transistor ignition circuit bu941
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM
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BU941Z
BU941ZL-T3P-T
BU941ZG-T3P-T
BU941ZL-TA3-T
BU941ZG-TA3-T
O-220
BU941ZL-TQ2-T
BU941ZG-TQ2-T
O-263
BU941ZL-TQ2-R
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ignition coil bu941l
Abstract: hFE-100 utc 1018 bu941l ignition coil bu941 NPN Transistor 10A 24V ignition coil npn power darlington BU941L-T3P-T vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor
Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM
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BU941
BU941L
BU941-T3P-T
BU941L-T3P-T
BU941-TA3-T
BU941L-TA3-T
BU941-TQ2-R
BU941L-TQ2-R
BU941-TQ2-T
BU941L-TQ2-T
ignition coil bu941l
hFE-100
utc 1018
bu941l
ignition coil bu941
NPN Transistor 10A 24V
ignition coil npn power darlington
BU941L-T3P-T
vbe 10v, vce 500v NPN Transistor
vce 500v NPN Transistor
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor. FEATURES * Humidifier, DC-DC converter, and general purpose ORDERING INFORMATION
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2SC3834
2SC3834
2SC3834L-TA3-T
2SC3834G-TA3-T
O-220
2SC3834L-T3P-T
2SC3834G-T3P-T
QW-R203-026
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM
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BU941Z
BU941ZL-T3P-T
BU941ZG-T3P-T
BU941ZL-TA3-T
BU941ZG-TA3-T
O-220
QW-R214-022.
QW-R214-022
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NPN Transistor 10A 24V
Abstract: No abstract text available
Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER
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BU941
O-220
QW-R203-025
NPN Transistor 10A 24V
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hFE-100
Abstract: NPN Transistor 10A 24V utc 1018 transistor ignition circuit bu941 BU941 ignition coil bu941 npn high voltage transistor 500v 8a NPN DARLINGTON 10A 500V 12SAFE hFE100
Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER
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BU941
O-220
QW-R203-025
hFE-100
NPN Transistor 10A 24V
utc 1018
transistor ignition circuit bu941
BU941
ignition coil bu941
npn high voltage transistor 500v 8a
NPN DARLINGTON 10A 500V
12SAFE
hFE100
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TIP122 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. ORDERING INFORMATION Ordering Number
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TIP122
TIP122
TIP122-T60-K
TIP122L-T60-K
TIP122-TA3-T
TIP122L-TA3-T
TIP122-TF3-T
TIP122L-TF3-T
TIP122-TN3-R
TIP122L-TN3-R
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2n3901 equivalent
Abstract: 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent 2N2711 2N2712 2N2713 2N2714 2N2923
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (SAT) hFE M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2n3901 equivalent
2N3900 pnp
2N3900 pnp transistor
2n3900
2N3392 equivalent
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2N5339
Abstract: No abstract text available
Text: r= 7 SGS-THOMSON m7# lianeæiiiisTissiiiei_ 2N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PR EFER RED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.
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OCR Scan
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2N5339
2N5339
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Untitled
Abstract: No abstract text available
Text: rZ 7 SGS-THOMSON Ä T# R [L IS T O « 2 N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.
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OCR Scan
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N5339
2N5339
2N5339
P008B
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2N3643
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3643
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2N3643
Abstract: 2N3844 transistor 2N3 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390
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OCR Scan
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PDF
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3643
2N3844
transistor 2N3
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2N3662
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (SA T ) hF E M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391
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OCR Scan
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PDF
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3662
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2N3855
Abstract: 2N3856 2N3854 2N3856A 2N3855A 2N3854A n3860 2N2711 2N2712 2N2714
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E Device Type b v CEO @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3855
2N3856
2N3854
2N3856A
2N3855A
2N3854A
n3860
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