Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN 500V Search Results

    NPN 500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    NPN 500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BU941

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BU941 BU941L-T3P-T BU941G-T3P-T BU941L-TA3-T BU941G-TA3-T BU941L-TQ2-T BU941G-TQ2-T BU941L-TQ2-R BU941G-TQ2-R O-220 BU941

    vbe 10v, vce 500v NPN Transistor

    Abstract: transistor ignition circuit bu941
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BU941 BU941-T3P-T BU941L-T3P-T BU941-TA3-T BU941L-TA3-T BU941-TQ2-T BU941L-TQ2-T BU941-TQ2-R BU941L-TQ2-R O-220 vbe 10v, vce 500v NPN Transistor transistor ignition circuit bu941

    hFE-100

    Abstract: NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941
    Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode APPLICATIONS TO-3P * High ruggedness electric ignitions 1: BASE 2:COLLECTOR 3: EMITTER


    Original     		PDF BU941 QW-R214-004 hFE-100 NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941

    ignition coil bu941l

    Abstract: hFE-100 utc 1018 bu941l ignition coil bu941 NPN Transistor 10A 24V ignition coil npn power darlington BU941L-T3P-T vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER „ FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode „ APPLICATIONS * High ruggedness electric ignitions „ INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BU941 BU941L BU941-T3P-T BU941L-T3P-T BU941-TA3-T BU941L-TA3-T BU941-TQ2-R BU941L-TQ2-R BU941-TQ2-T BU941L-TQ2-T ignition coil bu941l hFE-100 utc 1018 bu941l ignition coil bu941 NPN Transistor 10A 24V ignition coil npn power darlington BU941L-T3P-T vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor

    NPN Transistor 10A 24V

    Abstract: No abstract text available
    Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER


    Original     		PDF BU941 O-220 QW-R203-025 NPN Transistor 10A 24V

    hFE-100

    Abstract: NPN Transistor 10A 24V utc 1018 transistor ignition circuit bu941 BU941 ignition coil bu941 npn high voltage transistor 500v 8a NPN DARLINGTON 10A 500V 12SAFE hFE100
    Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER


    Original     		PDF BU941 O-220 QW-R203-025 hFE-100 NPN Transistor 10A 24V utc 1018 transistor ignition circuit bu941 BU941 ignition coil bu941 npn high voltage transistor 500v 8a NPN DARLINGTON 10A 500V 12SAFE hFE100

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-K QW-R223-020

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-F-K 13003EDAL-T92-F-B QW-R223-020

    Untitled

    Abstract: No abstract text available
    Text: 2N5010 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 500V 0.41 (0.016)


    Original     		PDF 2N5010 O205AD) 10/25m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5010 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 500V 0.41 (0.016)


    Original     		PDF 2N5010 O205AD) 10/25m 17-Jul-02

    2N5010

    Abstract: No abstract text available
    Text: 2N5010 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 500V 0.41 (0.016)


    Original     		PDF 2N5010 O205AD) 10/25m 1-Aug-02 2N5010

    Untitled

    Abstract: No abstract text available
    Text: BUX55 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 500V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BUX55 O205AD) 19-Jun-02

    BUX55

    Abstract: No abstract text available
    Text: BUX55 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 500V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BUX55 O205AD) 1-Aug-02 BUX55

    NTE394

    Abstract: No abstract text available
    Text: NTE394 Silicon NPN Transistor Power Amp, High Voltage Switch Description: The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching applications. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V


    Original     		PDF NTE394 NTE394 100mA,

    NPN VCEO 500V sot23

    Abstract: ZTX857 FZT657 ZTX458
    Text: High Voltage Transistors NPN High Voltage Transistors 300 to 500 Volts The Zetex range of 300V to 500V transistors provide optimized high performance NPN specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to line


    Original     		PDF FZT857 ZTX857 FZT657 OT223 OT223 NPN VCEO 500V sot23 ZTX458

    NTE2550

    Abstract: NPN DARLINGTON 10A 500V 50W 400V 10A NPN transistor
    Text: NTE2550 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V


    Original     		PDF NTE2550 NTE2550 NPN DARLINGTON 10A 500V 50W 400V 10A NPN transistor

    NTE2317

    Abstract: automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


    Original     		PDF NTE2317 NTE2317 150mA automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor

    Untitled

    Abstract: No abstract text available
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


    Original     		PDF NTE2317 NTE2317

    nte2317

    Abstract: automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


    Original     		PDF NTE2317 NTE2317 150mA automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor

    nte175

    Abstract: NTE38
    Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching


    Original     		PDF NTE38 NTE175 NTE38: 200mA NTE175: NTE38 875mA nte175

    automotive ignition

    Abstract: NTE2316 105w vce 500v NPN Transistor
    Text: NTE2316 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2317 is an NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter circuits for motor controls.


    Original     		PDF NTE2316 NTE2317 140mA, automotive ignition NTE2316 105w vce 500v NPN Transistor

    NTE3042

    Abstract: dsa0023459
    Text: NTE3042 Optoisolator NPN Transistor Output Description: The NTE3042 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6–Lead DIP type package. Features: D 1500V Isolation


    Original     		PDF NTE3042 NTE3042 dsa0023459

    TO5 package

    Abstract: BUL54A-TO5
    Text: BUL54A-TO5 Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BUL54A-TO5 O205AA) 20-Aug-02 TO5 package BUL54A-TO5

    Untitled

    Abstract: No abstract text available
    Text: # Central CJD47 CJD50 semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD47, CJD50 types are NPN Silicon Power Transistors manufactured in a surface mount package designed for high voltage applications such as power supplies and other switching


    OCR Scan     		PDF CJD47 CJD50 CJD47, CJD50 200mA,