tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
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DL111/D
July-2001
r14525
tip122 tip127 audio amp schematic
mje521 equivalent
BJT small signal low power BD139
MJ15003 300 watts amplifier
2N3773 pinout
transistor mj11032 equivalent
MJ11028 transistor equivalent
2n3055 IC
2N3773 audio amplifier diagram
2n222 TRANSISTOR use as audio amplifier
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transistor MJL21194
Abstract: mjl21194 mjl21193 NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor mjl21193
Text: ON Semiconductort PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device
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MJL21193
MJL21194
MJL21193*
MJL21194*
MJL21194
transistor MJL21194
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
transistor mjl21193
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NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Abstract: mjl21195
Text: ON Semiconductort PNP MJL21195 * NPN MJL21196 * Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • • •
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MJL21195
MJL21196
MJL21195
MJL21196
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
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transistor Mj21194
Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR MJ21194 MJ21193
Text: ON Semiconductort PNP MJ21193 * NPN MJ21194 * Silicon Power Transistors The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device
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MJ21193
MJ21194
MJ21193
MJ21194
transistor Mj21194
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: ON Semiconductor Plastic Medium Power NPN Silicon Transistor BD159 . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 20 WATTS • Suitable for Transformerless, Line−Operated Equipment
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BD159
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NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Abstract: No abstract text available
Text: ON Semiconductort PNP MJ21195 * NPN MJ21196 * Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device
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MJ21195
MJ21196
MJ21195
MJ21196
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: PNP MJ11021 (NPN) MJ11022 Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. http://onsemi.com • High dc Current Gain @ 10 Adc − • • •
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MJ11021
MJ11022
MJ11022,
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2n5684
Abstract: No abstract text available
Text: ON Semiconductort PNP High−Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • • IC Continuous = 50 Amperes. DC Current Gain −
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2N5684
2N5686
2n5684
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort NPN MJH6284 Darlington Complementary Silicon Power Transistors PNP MJH6287 . . . designed for general−purpose amplifier and low−speed switching motor control applications. ON Semiconductor Preferred Devices • Similar to the Popular NPN 2N6284 and the PNP 2N6287
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MJH6284
MJH6287
2N6284
2N6287
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2N6488 power amplifier circuit
Abstract: 2n6488
Text: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * PNP . . . designed for use in general−purpose amplifier and switching applications. 2N6490 • DC Current Gain Specified to 15 Amperes — • • • 2N6491* hFE = 20 −150 @ IC = 5.0 Adc
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2N6487
2N6488
2N6487,
2N6490
2N6488,
2N6491
O-220AB
2N6490
2N6491*
2N6488 power amplifier circuit
2n6488
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Untitled
Abstract: No abstract text available
Text: ON Semiconductor NPN BD787 Complementary Plastic Silicon Power Transistors PNP BD788 . . . designed for lower power audio amplifier and low current, high−speed switching applications. • Low Collector−Emitter Sustaining Voltage — • • 4 AMPERE
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BD787
BD788
BD787,
BD788
BD787
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mje243
Abstract: mje253 mje253 transistor 200 watts audio amp power transistors
Text: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low−current, high−speed switching applications. *ON Semiconductor Preferred Device • High Collector−Emitter Sustaining Voltage —
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MJE243
MJE253
MJE243,
MJE253
mje243
mje253 transistor
200 watts audio amp power transistors
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MJH11021
Abstract: No abstract text available
Text: ON Semiconductort PNP MJH11017 * Complementary Darlington Silicon Power Transistors MJH11019 * . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11021 * • High DC Current Gain @ 10 Adc — •
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MJH11017
MJH11019
MJH11021
MJH11018
MJH11020
MJH11022
MJH11018,
MJH11020,
MJH11022,
MJH11017
MJH11021
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2N6488 MOTOROLA
Abstract: 1N5825 221A-06 2N6487 2N6488 2N6490 2N6491 2N6497 MSD6100 ISS-20
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon P lastic Power Transistors 2N 6488* PNP . . . designed for use in general-purpose amplifier and switching applications. 2N 6490 2 N6491* • DC Current Gain Specified to 15 Amperes —
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2N6487
2N6490
2N6488
2N6491
O-220AB
2N6490
2N6491
2N6488 MOTOROLA
1N5825
221A-06
2N6497
MSD6100
ISS-20
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2N3716
Abstract: 2N3714 2N3713 2N3715 2N3789 2N3792
Text: ÆàMOS PEC SILICON NPN POWER TRANSISITORS NPN 2N3713 Thru 2N3716 . designed for medium-speed switching and amplifier applications FEATURES * * * * Gain Ranged Specified at 1A and 3A. Low VCE sat : typically 0.5 V @ lc=5 A , lB=0.5A Excellent Safe Operating Areas
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2N3789
2N3792
2N3713
2N3716
2N3713
2N3715
2N3714
2N3716
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bdx340
Abstract: BDX330 BDX33C LJ e 34b SILICON COMPLEMENTARY transistors darlington 221A-06 BDX33B BDX34B BDX34C NPN bipolar junction transistors max hfe 2000
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B Darlington Com plem entary Silicon Power Transistors BDX33C* PNP . . . designed for general purpose and low speed switching applications. BDX34B • High DC Current Gain — hFE = 2500 typ. at Iq = 4.0 • Collector-Emitter Sustaining Voltage at 100 mAdc
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BDX33B,
BDX33C,
33C/34B,
O-220AB
BDX33B
BDX33C"
BDX34B
BDX34C
bdx340
BDX330
BDX33C
LJ e 34b
SILICON COMPLEMENTARY transistors darlington
221A-06
BDX34C
NPN bipolar junction transistors max hfe 2000
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2N3716
Abstract: 2N3713 2N3714 2N3715 2N3789 2N3792
Text: SILICON NPN POWER TRANSISITORS NPN 2N3713 Thru 2N3716 . designed for medium-speed switching and amplifier applications FEATURES * * * * Gain Ranged Specified at 1A and 3A. Low VCE sat : typically 0.5 V @ lc=5 A , lB=0.5A Excellent Safe Operating Areas Complementary PNP Types Available 2N3789 thru 2N3792
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2N3789
2N3792
2N3713
2N3716
2N3713
2N3715
2N3714
2N3716
2N3713,
2N3792
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2N6547
Abstract: 2N654 12 volt 200 Amp PWM 2N6546
Text: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS The 2N6546 and 2N6547 transistors are designed for high- NPN 2N6546 2N6547 voltage .high-speed,power switching inductive circuits where fail time is criticai.they are particularly, suited for 115 and 220 volt line
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2N6546
2N6547
2N6546
2N654?
2N654Speratures,
F0R2N6546
VCFXARE100
2N6S46,
2N654
12 volt 200 Amp PWM
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2N3716
Abstract: 3715 transistor 2N3791 MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 3715 2N 3716 Silicon NPN Pow er Transistors . . . designed for medium-speed switching and amplifier applications. These devices feature: ♦Motorola P rtfrre d D«vlc» Total Switching Time at 3 A typically 1.15 us
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2N3791
2N3715
2N3716
3715 transistor
2N3791 MOTOROLA
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2N6547
Abstract: 2N6546 12 volt 200 Amp PWM
Text: Æ&m o s p e c SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS NPN The 2N6546 and 2N6547 transistors are designed for highvoltage .high-speed,power switching inductive circuits where fail 2N6546 2N6547 time is criticai.they are particularly, suited for 115 and 220 volt line
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2N6546
2N6547
2N654S
F0R2N6546
VCFXARE100
2N6S46,
12 volt 200 Amp PWM
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MJL21103
Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR JL21193 MJL21194 transistor MJL21194 MJL21193MJL21194
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JL21193* NPN M JL21194* Silicon Power Transistors T h e M J L 2 1 1 9 3 a n d M J L 2 1 1 9 4 u tiliz e P e rfo ra te d E m itte r te c h n o lo g y a n d a re sp e c ific a lly d e s ig n e d fo r high p o w e r a u d io o utp ut, d is k h ea d p o s itio n e rs a nd lin e a r
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JL21193*
JL21194*
MJL21193
JL21194
MJL21103
MJL21194
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
JL21193
transistor MJL21194
MJL21193MJL21194
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Untitled
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JH6282 Darlington Com plem entary Silicon Power Transistors M JH 6283* . . . designed for general-purpose amplifier and low-apeed switching motor control applications. M JH 6284* • M JH6285 PNP Similar to the Popular NPN 2N6282, 2N6283,2N6284 and the PNP 2N6285,
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2N6282,
2N6283
2N6284
2N6285,
2N6286
2N6287
JH6282
JH6285
MJH6287
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npn darlington transistor 150 watts
Abstract: transistor MJH 11020 Motorola Bipolar Power Transistor Device Data MJH11017 MJH11020 mj10012 motorola MJH11022 oasis MJ10012 MJH10012
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JH 10012 S e » M M 1 0 0 1 2 Complementary Darlington Silicon Power Transistors PNP MJH11017* MJH11019* MJH11021* NPN MJH11018* MJH11020* MJH11022* , . . designed for use as general purpose amplifiers, low frequency switching and
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MJH10012
MM10012)
MJH11018
MJH11020
MJH11022
MJH11017
MJH11019
MJH11021
npn darlington transistor 150 watts
transistor MJH 11020
Motorola Bipolar Power Transistor Device Data
mj10012 motorola
oasis
MJ10012
MJH10012
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D45H7
Abstract: D44H7 D45H4 D44H D44H1 D44H10 D44H4 D45H D45H1 D44H1.2
Text: ÆàMOSPEC COMPLEMENTARY SILICON POWER TRANSISTORS PNP D45H Series NPN D44H Series .designed for various specific and general purpose application such as;output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz; series,shunt and switching regulators; low
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D44H1
D44H4
D45H4
D44H7
D45H7
D44H10
D4SH10
rb-10
D44H/45H1
D44H/45H4
D44H
D45H
D45H1
D44H1.2
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