SO930
Abstract: SO918 BSX28 BCW67B SOT-223 SO5400 low noise transistors vhf So642 2n2222a SOT223 BCY70 bfx40
Text: TRANSISTORS SMALL SIGNAL TO-18 TO-39 TO-72 SOT-223 TO-126/SOT-32 SOT-23 TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Max rating Polarity VCEO V NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN 15 12 15 25 25 25 25 20 30 15 15 20 30 20 IC Type Ptot
|
Original
|
PDF
|
O-126/SOT-32
OT-223
OT-23
2N2857
2N5179
BFX89
BFR99A
BFR99
BFW16A
BFW17A
SO930
SO918
BSX28
BCW67B SOT-223
SO5400
low noise transistors vhf
So642
2n2222a SOT223
BCY70
bfx40
|
transistor SD335
Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen
|
Original
|
PDF
|
Si-npn-Planar-EpitaxieSC116
Si-npn-Planar-EpitaxieSC117
Si-npn-Planar-EpitaxieSC118
Si-npn-Planar-EpitaxieSC119
Si-npn-Planar-EpitaxieSC236
Si-npn-Planar-EpitaxieSC237
Si-npn-Planar-EpitaxieSC238
VorSC239
Si-pnp-Planar-EpitaxieSC307
Si-pnp-Planar-EpitaxieSC308
transistor SD335
SF126
SF127
SF128
SD337
sd336
SF137
BF241 TRANSISTOR
SD349
SD339
|
123AP
Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge
|
Original
|
PDF
|
123AP
NTE159)
NTE396)
NTE375)
NTE159
NTE123AP
NTE290A
935-6072
NTE184
NTE199
NTE128
NTE293
NTE130
|
NPN TRANSISTOR SMD MARKING CODE B2
Abstract: DFN2020-6
Text: PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat BISS transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
|
Original
|
PDF
|
PBSS4230PAN
DFN2020-6
OT1118)
PBSS4230PANP.
PBSS5230PAP.
AEC-Q101
NPN TRANSISTOR SMD MARKING CODE B2
DFN2020-6
|
Untitled
Abstract: No abstract text available
Text: PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat BISS transistor Rev. 01 — 26 April 2004 Objective data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package. PNP complement: PBSS5160DS. 1.2 Features
|
Original
|
PDF
|
PBSS4160DS
OT457
SC-74)
PBSS5160DS.
|
npn transistor footprint
Abstract: No abstract text available
Text: PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
|
Original
|
PDF
|
PBSS4260PAN
DFN2020-6
OT1118)
PBSS4260PANP.
PBSS5260PAP.
AEC-Q101
npn transistor footprint
|
Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
|
Original
|
PDF
|
PBSS4130PAN
DFN2020-6
OT1118)
PBSS4130PANP.
PBSS5130PAP.
AEC-Q101
|
k 4110
Abstract: Q62702-P5073
Text: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
|
Original
|
PDF
|
3100y
k 4110
Q62702-P5073
|
k 4110
Abstract: GEOY6976 Q62702-P5073
Text: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
|
Original
|
PDF
|
3100y
k 4110
GEOY6976
Q62702-P5073
|
Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 850 nm bis 1100 nm
|
Original
|
PDF
|
Q62702-P5073
Q62702-P5475
GEOY6976
|
Untitled
Abstract: No abstract text available
Text: 2014-01-14 Silicon NPN Phototransistor with Daylight - Cutoff Filter NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Version 1.3 SFH 3100 F Features: Besondere Merkmale: • Spectral range of sensitivity: typ 850 . 1100 nm • Special: Narrow half angle
|
Original
|
PDF
|
411teil,
D-93055
|
barcode reader circuit
Abstract: barcode reader opto counter fototransistor led k 4110 transistor k 4110 GEOY6976
Text: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter Lead Pb Free Product - RoHS Compliant SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm
|
Original
|
PDF
|
|
k 4110
Abstract: GEOY6976 Q62702-P5073 radiant 3100
Text: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter Lead Pb Free Product - RoHS Compliant SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 850 nm bis 1100 nm
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter Lead Pb Free Product - RoHS Compliant SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 850 nm bis 1100 nm
|
Original
|
PDF
|
|
|
|
GEO06976
Abstract: Q62702-P5073
Text: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
|
Original
|
PDF
|
OHF00383
GEO06976
GEO06976
Q62702-P5073
|
Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
|
Original
|
PDF
|
GEOY6976
|
Untitled
Abstract: No abstract text available
Text: GH3 光电开关 漫反射型 漫反射板型 对射型 NPN 常开 102 10.30cm 3m 6m GH3-3102NA NPN 常闭 NPN 一开一闭 GH3-3102NB GH3-4102NC 外形编号 检测距离 Sn 具 DC PNP 常开 备 型 PNP 常闭 型 号 GH3-3102ND GH3-3102NE PNP 一开一闭
|
Original
|
PDF
|
GH3-3102NA
GH3-3102NB
GH3-4102NC
GH3-3102ND
GH3-3102NE
0-250V
|
DSC5002
Abstract: BF200 transistor NC103 DSC-5002 RE03
Text: DSC5002 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: DSC5002 Product type: Small Signal Bipolar Transistor NPN Parameters *$ .MODEL DSC5002 NPN + IS=72.000E-15 + BF=200 + NF=1 + VAF=110 + IKF=4.7 + ISE=310.0000E-18 + NE=1.28
|
Original
|
PDF
|
DSC5002
DSC5002
000E-15
0000E-18
0000E-15
000E-12
432E-12
40E-12
000E-9
BF200 transistor
NC103
DSC-5002
RE03
|
NPN transistor 2n4400 beta value
Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
Text: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN
|
OCR Scan
|
PDF
|
2N2711
2N2712
2N2924
2N2925
2N2926Â
2N4401
2N4402
2N4403
MPS2713
MPS2714
NPN transistor 2n4400 beta value
TP4058
NPN transistor 2n 3904
TP4059
transistor EBC 3904
TP4060
2N2712 to-92hs
TP3644
|
2N9308
Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5
|
OCR Scan
|
PDF
|
00DDS7Ã
T-A7-01
2N497
12/3S
30/S9
2N3725A
2N3947
2N4080
2N4137
2N4207
2N9308
2N221BA
2N69S
2N3304
2M2193
2NI893
2N236S
2N408
2N238
|
T4 3570
Abstract: transistor t4 3570 2N2712 transistor 2n2712 2N2711 2N2713 2N3900 2N2646 2N3405 n3860
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390
|
OCR Scan
|
PDF
|
2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
T4 3570
transistor t4 3570
transistor 2n2712
2N3900
2N2646
2N3405
n3860
|
BUL310
Abstract: No abstract text available
Text: B U L 310 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED
|
OCR Scan
|
PDF
|
|
TRANSISTOR 2N 4401
Abstract: NEC 2N4400 2n4401
Text: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE 2N4400,2N4401 GENERAL PURPOSE SWITCHING AND AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION 2N4400, 2N4401 are NPN transistors, designed for general purpose switching and amplifier applications, feature injection-molded plastic package for high reliability.
|
OCR Scan
|
PDF
|
2N4400
2N4401
2N4400,
2N4401
625mW
300at
150mA
2N4401)
2N4402,
2N4403
TRANSISTOR 2N 4401
NEC 2N4400
|
Untitled
Abstract: No abstract text available
Text: SIEMENS NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Vorläufige Daten / Preliminary Data Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale
|
OCR Scan
|
PDF
|
3100F
OHF00383
|
