2SD2017
Abstract: FM20
Text: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W
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2SD2017
O220F)
2000min
100max
10max
250min
20typ
65typ
150x150x2
100x100x2
2SD2017
FM20
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2SD2017
Abstract: FM20
Text: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W
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2SD2017
O220F)
2000min
100max
10max
250min
20typ
65typ
150x150x2
100x100x2
2SD2017
FM20
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transistor tl 430 c
Abstract: No abstract text available
Text: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =
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BDY46
transistor tl 430 c
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Untitled
Abstract: No abstract text available
Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
O-220
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Untitled
Abstract: No abstract text available
Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
O-220
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Untitled
Abstract: No abstract text available
Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
KSC5338D/KSC5338DW
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ZTX857
Abstract: 300V transistor npn 2a DSA003778
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX857 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 810 950 mV IC=2A, VCE=5V* Static Forward Current Transfer Ratio
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ZTX857
100mA,
100MHz
250mA,
500mA,
100ms
ZTX857
300V transistor npn 2a
DSA003778
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300V transistor npn 2a
Abstract: 2SC5305 2SC5305L
Text: UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications
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2SC5305
O-220
2SC5305L
QW-R203-028
300V transistor npn 2a
2SC5305
2SC5305L
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2sc5305
Abstract: 2SC5305L
Text: UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications
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2SC5305
O-220F
2SC5305L
QW-R219-003
2sc5305
2SC5305L
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NPN Transistor 10A 400V
Abstract: 2N5663 300V transistor npn 2a LE17
Text: SILICON POWER NPN TRANSISTOR 2N5663 • Fast Switching Transistor • Hermetic TO-5 Metal Package • Applications include High Speed Switching Circuits and Power Amplifiers • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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2N5663
100mW/
O-205AA)
NPN Transistor 10A 400V
2N5663
300V transistor npn 2a
LE17
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NTE385
Abstract: No abstract text available
Text: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
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NTE385
NTE385
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JANS2N2484
Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
Text: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930
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JANS2N930
JANS2N930UB
JANS2N2218
JANS2N2218A
JANS2N2218AL
JANS2N2219
JANS2N2219A
JANS2N2219AL
JANS2N2221A
JANS2N2221AL
JANS2N2484
JANS2N3439UA
JANS2N3637
transistors SMD npn
JANS2N5339U3
JANS2N7373
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300V transistor npn 2a
Abstract: 300V switching transistor NPN Transistor 10A 400V TIP151 Diode 400V 1.5A NPN Transistor 1.5A 400V NPN Transistor 10A 400V to 92 tip152 TRANSISTOR VCE 400V 500mA TIP150
Text: TIP150, TIP151, TIP152 Silicon NPN Power Darlington Transistor Description: The TIP150, TIP151, and TIP152 are silicon NPN power Darlington transistors in a TO220 type package designed for use in automotive ignition, switching, and motor control applications.
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TIP150,
TIP151,
TIP152
TIP152
TIP150)
TIP151)
TIP152)
TIP150
300V transistor npn 2a
300V switching transistor
NPN Transistor 10A 400V
TIP151
Diode 400V 1.5A
NPN Transistor 1.5A 400V
NPN Transistor 10A 400V to 92
TRANSISTOR VCE 400V 500mA
TIP150
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MJE18008
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification MJE18008 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts
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MJE18008
O-220C
CycleC10%
MJE18008
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MJE18008
Abstract: No abstract text available
Text: Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18008 ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed ・Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS
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MJE18008
O-220C
Cycle10%
MJE18008
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MJF18008 equivalent
Abstract: MJF18008
Text: SavantIC Semiconductor Product Specification MJF18008 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts
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MJF18008
O-220F
O-220F)
CycleC10%
MJF18008 equivalent
MJF18008
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BUV48
Abstract: BUV48A buv48 equivalent BUV48 Applications
Text: SavantIC Semiconductor Product Specification BUV48 BUV48A Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING See Fig.2
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BUV48
BUV48A
BUV48
BUV48A
buv48 equivalent
BUV48 Applications
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MJF18008
Abstract: MJF18008 equivalent
Text: Inchange Semiconductor Product Specification MJF18008 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220F package ・High voltage ,high speed APPLICATIONS ・Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts
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MJF18008
O-220F
O-220F)
Cycle10%
MJF18008
MJF18008 equivalent
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MJE18008
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification MJE18008 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed APPLICATIONS ・Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts
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MJE18008
O-220C
Cycle10%
MJE18008
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300V transistor npn 2a
Abstract: 2N5240 voltage regulators 300v dc 300V series regulators 200V transistor npn 2a 300V regulator 2N5240 inchange
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5240 DESCRIPTION •High Voltage: VCEO SUS = 300V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and
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2N5240
RBE50
300V transistor npn 2a
2N5240
voltage regulators 300v dc
300V series regulators
200V transistor npn 2a
300V regulator
2N5240 inchange
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Untitled
Abstract: No abstract text available
Text: KSC5305DF NPN Silicon Transistor Features Equivalent Circuit C • High Voltage High Speed Power Switch B Application • • • • TO-220F 1 1.Base 3.Emitter E Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5305DF
O-220F
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QS 100 NPN Transistor
Abstract: KSC5305DF
Text: KSC5305DF NPN Silicon Transistor Features Equivalent Circuit C • High Voltage High Speed Power Switch B Application • • • • TO-220F 1 1.Base 3.Emitter E Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5305DF
O-220F
QS 100 NPN Transistor
KSC5305DF
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LB-008
Abstract: lc08a LB 125 transistor Triple Diffused
Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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OCR Scan
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KSC5338D/KSC5338DW
O-220
LB-008
lc08a
LB 125 transistor
Triple Diffused
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Untitled
Abstract: No abstract text available
Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
T0-220
C35siÃ
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