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    NPN 2SC732 Search Results

    NPN 2SC732 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    NPN 2SC732 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5471

    Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
    Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN


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    PDF 2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor

    transistor 2sC732

    Abstract: 2SC732
    Text: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC732 100Hz, transistor 2sC732 2SC732

    transistor 2sC732

    Abstract: 2sc732 hFE-200 to-92 npn NPN 2sc732
    Text: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC732 100Hz, transistor 2sC732 2sc732 hFE-200 to-92 npn NPN 2sc732

    2SC732

    Abstract: transistor 2sC732 NPN 2sc732 2SC732 Transistor 2SC732 equivalent 2SC732 s
    Text: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC732 100Hz, 2SC732 transistor 2sC732 NPN 2sc732 2SC732 Transistor 2SC732 equivalent 2SC732 s

    2SC732

    Abstract: transistor 2sC732 NPN 2sc732
    Text: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC732 100Hz, 2SC732 transistor 2sC732 NPN 2sc732

    toshiba 2SC732

    Abstract: 2SC732TM
    Text: 2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage : VCEO = 50V Excellent hFE Linearity : hFE (IC = 0.1mA)/hFE (IC = 2mA) = 0.95 (Typ.) Low Noise : NF (1) = 0.5dB (Typ.) (f = 100Hz)


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    PDF 2SC732TM 100Hz) 100Hz, toshiba 2SC732 2SC732TM

    2SC1313

    Abstract: bc182c NPN 2sC1685 2SC3247K 2SC734GR 2SC1815LY 2SC1815L-G 2SC1815LBL 2SC1815L 2S01623
    Text: LOW-POWER SILICON NPN Item Number Part Number -5 10 15 20 25 -30 40 Indust Mexi ToshibaCorp Sanyo Elect Sanyo Elect Indust Mexi ToshibaCorp Sanyo Elect ToshibaCorp See Index See Index ~SC~~~I\ ~atsus!!~ta 2SC2998G 2SC3114 2S01623U 2S01835 NB012EL NB012EZ NB012FL


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    PDF 2SC1815LGR 2SC2458LGR 2SC3134H6 2SC3361S6 2SC734GR TEC90140 2S01623T TE01402E BC182K BC182KB 2SC1313 bc182c NPN 2sC1685 2SC3247K 2SC1815LY 2SC1815L-G 2SC1815LBL 2SC1815L 2S01623

    2SJ74

    Abstract: 2SC3136 2SK118 2SC1815 2SA1015 2SC1815 2sc2240 equivalent 2SA1349 2SA1015 2SK241 2SC2348
    Text: 主要特性一覧表 [2] [ 2 ] 主要特性一覧表 TO-92 タイプ SC-43 1. TO-92 <トランジスタ> 形 名 NPN 2SC1815 PNP 2SA1015 O: 70~140 VCEO IC PC (V) (mA) (mW) 50 150 400 Y: 120~240  2SC732TM L L 2SC1815○ 2SA1015○ hFE 70~700/ 400 GR: 200~400


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    PDF SC-43) 2SC1815 2SA1015 2SC732TM 2SC1815 2SC2240 2SA970 2SC3381 2SA1349 2SJ74 2SC3136 2SK118 2SC1815 2SA1015 2sc2240 equivalent 2SA1349 2SA1015 2SK241 2SC2348

    equivalent of transistor 8050

    Abstract: 2SC734 equivalent Equivalent to transistor 2sc945 transistor 2SC710 transistor BC 337 transistor 2SC711 bc 8050 8050 equivalent 2sc828 equivalent 2SC711
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC621 HN / BC 548 / 9014 2SC754 HN / BC 548 / 9014 2SC950 HN / BC 548 / 9014 2SC622 HN / BC 548 / 9014


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    PDF To-92 2SC621 2SC754 2SC950 2SC622 2SC755 2SC951 2SC631 2SC814 2SC953 equivalent of transistor 8050 2SC734 equivalent Equivalent to transistor 2sc945 transistor 2SC710 transistor BC 337 transistor 2SC711 bc 8050 8050 equivalent 2sc828 equivalent 2SC711

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


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    PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    tb31224cf

    Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
    Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future


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    PDF SCE0007A tb31224cf transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR SEM ICONDUCTOR T O SH IB A TECHNICAL 2SC732TM DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC732TM) Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS • High Breakdomn Voltage : V q e O ~ 50V • Excellent hpE Linearity : hFE dC = 0.1mA) / hFE (Iq = 2mA) = 0.95 (Typ.)


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    PDF 2SC732TM 2SC732TM) 100Hz) 2SC732TM

    2SC732TM

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL 2SC732TM DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC732TM) LOW NOISE AUDIO AMPLIFIER APPLICATIONS • • • Unit in mm High Breakdomn Voltage : V£EO = 50V Excellent hpg Linearity : hpE (IC = 0-l rn^L) 1hpE dC = 2mA) = 0.95 (Typ.)


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    PDF 2SC732TM 2SC732TM) 100Hz) 2SC732TM

    2SC732TM

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR SEMICONDUCTOR TO SH IB A TECHNICAL 2SC732TM SILICON NPN EPITAXIAL TYPE PCT PROCESS DATA (2SC732TM) Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS • High Breakdomn Voltage : • Excellent hEE Linearity V q E o = 50V . 5.1 M AX. : hFE (Ie = 0.1mA) / hFE (Ie = 2mA) = 0.95 (Typ.)


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    PDF 2SC732TM 2sc732tm) 100Hz) 2SC732TM

    2SC732TM

    Abstract: M5030 S12R
    Text: TOSHIBA TRANSISTOR SEMICONDUCTOR T O S H IB A TECHNICAL 2SC732TM DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC732TM) Unit in mm LOW NOISE A U D IO AM PLIFIER APPLICATIO NS • • • High Breakdomn Voltage : V q e O = 50V Excellent hpg Linearity : hFE (Ic = 0.1mA) / hFE (Iq = 2mA) = 0.95 (Typ.)


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    PDF 2SC732TM 2SC732TM) 100Hz) 7500O M5030 S12R

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TO-92 1. TO-92 PACKAGE SERIES fsSTM ito |CJ i CD {DISCRETE/0PT0> 'N TO o > TRANSISTOR < Application NPN General Purpose 2SC1815 ! PNP i i 2SA1015 General Purpose 2SC2888 ! 2SA1158 V c e Sat MAX. hFE Type No. v CEO (V) •c PC (mA) (mW) 50 150 400


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    PDF 2SC1815 2SC2888 2SA1158 2SA1015 2SC1923 2SC380TM 2SC941TM 50vMAX

    2SC732

    Abstract: transistor 2sC732 2SC732GR 2SC373 2SC732BL 2SC732-GR NPN 2sc732 2SC732-BL transistor 2sc373 2SC373 GR
    Text: 2 /U D > N P N I t :^ ^ U ^ S 5 > ^ 7 .5 ? P C T B ^ 2 s c 732 ^ IL IC O N NPN EPITAXIAL TRANSISTOR (PCT PROCESS) O Low N o is e A m p lif ie r A p p lic a t io n s • U t i f t i ' / J ' S l ' : NF = 5 d B • (Typ.) ( f = 120Hz ) : hFE = 2 0 0 - 7 0 0


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    PDF 2sc732 120Hz 2SC732 transistor 2sC732 2SC732GR 2SC373 2SC732BL 2SC732-GR NPN 2sc732 2SC732-BL transistor 2sc373 2SC373 GR

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680