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    NPN 24A Search Results

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    BUV50

    Abstract: No abstract text available
    Text: BUV50 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV50 is a Multiepitaxial planar NPN


    Original     		PDF BUV50 125oC BUV50

    BUV50

    Abstract: BUV50 AT MICROELECTRONICS HIGH POWER NPN SILICON TRANSISTOR
    Text: BUV50 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV50 is a Multiepitaxial planar NPN


    Original     		PDF BUV50 125oC BUV50 BUV50 AT MICROELECTRONICS HIGH POWER NPN SILICON TRANSISTOR

    mje13009l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		PDF MJE13009 MJE13009 QW-R214-011 mje13009l

    mje13009 equivalent

    Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		PDF MJE13009 MJE13009 MJE13009L QW-R214-011 mje13009 equivalent 2N2222 SOA mje13009l MJE13009L-T3P-T 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data

    mje13009 equivalent

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		PDF MJE13009 MJE13009 O-220F QW-R219-007 mje13009 equivalent

    mje13009 equivalent

    Abstract: mje13009L 2N2222 NPN Transistor features MJE13009 MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are


    Original     		PDF MJE13009 MJE13009 MJE13009L QW-R203-024 mje13009 equivalent mje13009L 2N2222 NPN Transistor features MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T

    MJE13009L

    Abstract: mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 1 TO-3P DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are


    Original     		PDF MJE13009 MJE13009 O-220 O-220F QW-R203-024 MJE13009L mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T

    MLV12-8-H

    Abstract: IR Sensor transmitter and receiver pair MLV12-8-H-250 H160 VR10 MLV12 ir transmitter led 880nm sensors with response time 0.5ms MLV12-54-G
    Text: Photoelectric Sensors MLV12 Series Dura-VueTM Sensors • High-visibility, dual-position indicator LEDs • Thru-hole or dovetail mounting • Extreme low-temperature operation -40ºC/F available 4 output options from 1 sensor: NPN normally open, NPN normally


    Original     		PDF MLV12 250mm 450mm, OMH-06 MLV12-8-H IR Sensor transmitter and receiver pair MLV12-8-H-250 H160 VR10 ir transmitter led 880nm sensors with response time 0.5ms MLV12-54-G

    NTE2312

    Abstract: 220v 2a transistor
    Text: NTE2312 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited


    Original     		PDF NTE2312 NTE2312 220v 2a transistor

    NTE379

    Abstract: NTE379 equivalent
    Text: NTE379 Silicon NPN Transistor Power Amp, High Voltage, Switch Description: The NTE379 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited


    Original     		PDF NTE379 NTE379 NTE379 equivalent

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications


    Original     		PDF MJE13009-K MJE13009-K QW-R223-007

    MJE13009

    Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such


    Original     		PDF MJE13009 MJE13009 QW-R203-024 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications


    Original     		PDF MJE13009-P MJE13009-P QW-R223-008,

    Untitled

    Abstract: No abstract text available
    Text: MPQ3904 w w w. c e n t r a l s e m i . c o m SILICON NPN QUAD TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ3904 type is comprised of four independent silicon NPN transistors mounted in a 14-pin DIP, designed for general purpose amplifier and switching applications.


    Original     		PDF MPQ3904 MPQ3904 14-pin O-116 100MHz 140kHz 24-April

    ECH8202

    Abstract: A1556
    Text: ECH8202 Ordering number : ENA1556 SANYO Semiconductors DATA SHEET ECH8202 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • High-power IGBT/MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers. Features


    Original     		PDF ECH8202 ENA1556 A1556-4/4 ECH8202 A1556

    BUV50

    Abstract: TC-100
    Text: SavantIC Semiconductor Product Specification BUV50 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·Suitable for use in clocked voltatge converters PINNING See Fig.2 PIN DESCRIPTION


    Original     		PDF BUV50 BUV50 TC-100

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    BUX98

    Abstract: BUX98A BUX98A ON BUX98-BUX98A
    Text: SavantIC Semiconductor Product Specification BUX98 BUX98A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage capability ·High current capability ·Fast switching speed APPLICATIONS ·High frequency and efficiency converters ·Linear and switching industrial equipment


    Original     		PDF BUX98 BUX98A BUX98 BUX98A BUX98A ON BUX98-BUX98A

    BUV50

    Abstract: No abstract text available
    Text: SGS-THOMSON BUV50 im HIGH POWER NPN SILICON TRANSISTOR . . • . ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125°C APPLICATIO N . SWITCHING REGULATORS ■ MOTOR COISTTROL D ESCRIP TIO N


    OCR Scan     		PDF BUV50 BUV50

    Untitled

    Abstract: No abstract text available
    Text: SG S-TH O M SO N RfflD0lsi i[Liera®[i!lDS$ BUV50 HIGH POW ER NPN SILICON TR A N SISTO R . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY . FAST SWITCHING SPEED . FULLY CHARACTERISED AT 125°C APPLICATION . SWITCHING REGULATORS


    OCR Scan     		PDF BUV50 BUV50 P003F

    bus97

    Abstract: lsoa lb134
    Text: M O T O R O L A SC { X S T R S / R F3- r 6367254 1b MOTOROLA SC XSTR S/R F D^jb3t,755M DDÖ07S3 96D 8 0 7 5 3 D T MOTOROLA 33 - BUS97 BUS97A SEMICONDUCTOR TECHNICAL DATA 18 AMPERES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICO N POWER TRA N SISTO RS


    OCR Scan     		PDF F36367254 BUS97 BUS97A BUS97A lsoa lb134

    Untitled

    Abstract: No abstract text available
    Text: BDW23/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 24, BD W 24A, BD W 24B and BD W 24C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD W 23A 60


    OCR Scan     		PDF BDW23/A/B/C

    lem HA 10000

    Abstract: BDW23 lem HA 100MA 45 V NPN BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B
    Text: BDW23/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 24, BD W 24A, BD W 24B and BD W 24C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit 45 V : BD W 23A


    OCR Scan     		PDF BDW23/A/B/C BDW24, BDW24A, BDW24B BDW24C BDW23 BDW23A BDW23B BDW23C lem HA 10000 lem HA 100MA 45 V NPN BDW23A BDW23B BDW23C BDW24 BDW24A

    2SD1887

    Abstract: No abstract text available
    Text: Ordering num ber: EN 2434 2SD1887 No.2434 NPN Triple Diffused Planar Silicon Transistor SAiYO i Color TV Horizontal Deflection _Output Applications Applications . Color TV horizontal deflection output . Color display horizontal deflection output


    OCR Scan     		PDF 2SD1887 100ns 711707b 0DSD311 2SD1887