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    NPN 13001 Search Results

    NPN 13001 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy

    NPN 13001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13001 TRANSISTOR

    Abstract: 13001 npn transistor 13001 ST 13001 13001 TRANSISTOR equivalent st 13001 TRANSISTOR NPN transistor 13001 npn 13001 13001 transistor TO-92 13001
    Text: ST 13001 NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications Absolute Maximum Ratings Ta = 25 OC Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Symbol Value Unit Collector Base Voltage


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    13001 TRANSISTOR sw

    Abstract: 13001 TRANSISTOR 13001 SW 8A 13001 TRANSISTOR JAPAN transistor 2sd2645 2SD2645 TA-3088 c s 13001 TRANSISTOR all transistor 13001 13001 switching 5V 1A supply
    Text: Ordering number : ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


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    PDF ENN6897A 2SD2645 2SD2645] 13001 TRANSISTOR sw 13001 TRANSISTOR 13001 SW 8A 13001 TRANSISTOR JAPAN transistor 2sd2645 2SD2645 TA-3088 c s 13001 TRANSISTOR all transistor 13001 13001 switching 5V 1A supply

    13001 switching 5V 1A supply

    Abstract: 13001 TRANSISTOR 13001 TRANSISTOR JAPAN 13001 SW 8A 13001 TRANSISTOR equivalent sw 13001 transistor 13001 2SD2645 D1503 all transistor 13001
    Text: 2SD2645 Ordering number : ENN6897B NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


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    PDF 2SD2645 ENN6897B 13001 switching 5V 1A supply 13001 TRANSISTOR 13001 TRANSISTOR JAPAN 13001 SW 8A 13001 TRANSISTOR equivalent sw 13001 transistor 13001 2SD2645 D1503 all transistor 13001

    13001 TRANSISTOR

    Abstract: transistor s 13001 2SC5690 c s 13001 TRANSISTOR 13001 npn 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw 13001 SW 8A TA-3087
    Text: Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


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    PDF ENN6896A 2SC5690 2SC5690] 13001 TRANSISTOR transistor s 13001 2SC5690 c s 13001 TRANSISTOR 13001 npn 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw 13001 SW 8A TA-3087

    13001 TRANSISTOR

    Abstract: 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw transistor s 13001 c s 13001 TRANSISTOR 13001 npn 13001 SW 8A 2SC5690 all transistor 13001
    Text: Ordering number : ENN6896 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


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    PDF ENN6896 2SC5690 2SC5690] 13001 TRANSISTOR 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw transistor s 13001 c s 13001 TRANSISTOR 13001 npn 13001 SW 8A 2SC5690 all transistor 13001

    13001 TRANSISTOR

    Abstract: transistor x 13001 transistor 13001 transistor s 13001 13001 transistor 400v c s 13001 TRANSISTOR transistors 13001 c s x 13001 H 06 13001 A 13001 TO 92
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING Ta =25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage V Collector Emitter Voltage


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    PDF ISO/TS16949 CD13001 C-120 CD13001Rev 080102E 13001 TRANSISTOR transistor x 13001 transistor 13001 transistor s 13001 13001 transistor 400v c s 13001 TRANSISTOR transistors 13001 c s x 13001 H 06 13001 A 13001 TO 92

    13001 TRANSISTOR

    Abstract: 13001 SW 8A transistor 2sd2645 2SD2645 13001 switching 5V 1A supply c s 13001 TRANSISTOR transistor s 13001 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN transistor 13001
    Text: Ordering number : ENN6897 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). Adoption of MBIT process.


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    PDF ENN6897 2SD2645 2SD2645] 13001 TRANSISTOR 13001 SW 8A transistor 2sd2645 2SD2645 13001 switching 5V 1A supply c s 13001 TRANSISTOR transistor s 13001 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN transistor 13001

    13001 TRANSISTOR

    Abstract: transistor 13001 transistor x 13001 13001 transistor 400v c s x 13001 H 06 13001 npn transistors 13001 transistor s 13001 13001 transistor c s x 13001
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING Ta =25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage


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    PDF CD13001 C-120 CD13001Rev 080102E 13001 TRANSISTOR transistor 13001 transistor x 13001 13001 transistor 400v c s x 13001 H 06 13001 npn transistors 13001 transistor s 13001 13001 transistor c s x 13001

    13001 TRANSISTOR

    Abstract: c s x 13001 H 06 transistor x 13001 transistor c s x 13001 13001 TO-92 13001 npn transistor TO-92 13001 transistors 13001 transistor 13001 13001 transistor 400v
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING Ta =25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage V Collector Emitter Voltage


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    PDF CD13001 C-120 CD13001Rev 080102E 13001 TRANSISTOR c s x 13001 H 06 transistor x 13001 transistor c s x 13001 13001 TO-92 13001 npn transistor TO-92 13001 transistors 13001 transistor 13001 13001 transistor 400v

    13001 TRANSISTOR

    Abstract: transistor 13001 transistor x 13001 transistor 13001 TO 92 13001 transistor 400v c s x 13001 H 06 transistors 13001 all transistor 13001 NPN transistor 13001 transistor s 13001
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING Ta =25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage V Collector Emitter Voltage


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    PDF CD13001 C-120 CD13001Rev 080102E 13001 TRANSISTOR transistor 13001 transistor x 13001 transistor 13001 TO 92 13001 transistor 400v c s x 13001 H 06 transistors 13001 all transistor 13001 NPN transistor 13001 transistor s 13001

    2SD617

    Abstract: transistors 13001 633P 2SB633 2SB633P 2SD613P 613P
    Text: Ordering number : ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm


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    PDF ENN6662 2SB633P/2SD613P 2SB633P 2SD613P 2010C 2SD613P] 2SB633P O-220 2SD617 transistors 13001 633P 2SB633 2SD613P 613P

    transistor 13001

    Abstract: 13001 transistor 400v 13001 TRANSISTOR NPN transistor 13001 transistor 13001 TO 92 13001 TO-92 transistor TO-92 13001 KSE13001HE13001 13001 transistor TO-92 13001 npn transistor
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13001 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:D083AJ-00 芯片厚度:240±20µm 管芯尺寸:830x830µm 2 焊位尺寸:B 极 140×144µm 2,E 极 180×140µm 2


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    PDF 100mm D083AJ-00 KSE13001HE13001 900mW 10mAIB 500VIE 10VIC 100mAIB transistor 13001 13001 transistor 400v 13001 TRANSISTOR NPN transistor 13001 transistor 13001 TO 92 13001 TO-92 transistor TO-92 13001 KSE13001HE13001 13001 transistor TO-92 13001 npn transistor

    RA4025L10NCS

    Abstract: H10NCS RA2325H06POS 40110 H06POS ic 4890 dc 4025 RA 3 89 RA4850H12NCS H10PCS
    Text: Solid State Relays System Monitoring Relays Sense Relay Type RA. .S • System (line and load) monitoring relay • Zero switching • Rated operational current: 25, 50, 90 and 110 AACrms • Rated operational voltage: 120, 230, 400 and 480 VACrms


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    transistor D 13001

    Abstract: transistor x 13001 transistor s 13001 eb 13001 transistor bc617
    Text: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 00E75fifl 31D b'lE » APX 13001/ BC618 NPN D A R LIN G TO N TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. They can be used for general purpose low frequency applications and as relay drivers etc.


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    PDF 00E75fifl BC618 BC617 transistor D 13001 transistor x 13001 transistor s 13001 eb 13001 transistor bc617

    BU205

    Abstract: BU204 TO115
    Text: HORIZONTAL DEFLECTION TRANSISTOR NPN .specifically designed for use in large screen color deflection circuits. BU204 Boca Semiconductor Corp. BSC http ://www.bocasemi.com FEATURES: * Collector-Emitter Sustaining Voltage v c e x = 1300 V Min. - BU204 = 1500 V (Min.)-BU205


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    PDF BU204 -BU205 BU204 BU205 BU205 TO115

    BU205

    Abstract: BU204
    Text: ¿2&M0SPEC HORIZONTAL DEFLECTION TRANSISTOR NPN .specifically designed for use in large screen color deflection circuits. BU204 BU205 FEATURES: * Collector-Emitter Sustaining Voltage v c e x = 1300 V Min. - BU204 = 1500 V (Min.)-BU205 * Glassivated Base-Collector Junction


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    PDF BU204 -BU205 BU204 BU205 BU205

    si 13001

    Abstract: transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001 2SB633P 2SD613P
    Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P ISAfÊYOl 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions •High breakdown voltage, VCEO 85V, high current 6A. •AF 35 to 45W output. unit : mm


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    PDF ENN6662 2SB633P 2SD613P 2SD613P] O-220 si 13001 transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001

    2sd2645

    Abstract: transistor s 13001 13001 HF
    Text: Ordering number : ENN6897 NPN Triple Diffused Planar Silicon Transistor 2SD2645 ISA/iYO Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V . High reliability(Adoption of HVP process).


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    PDF ENN6897 2SD2645 2SD2645] 2sd2645 transistor s 13001 13001 HF

    si 13001

    Abstract: transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor
    Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions • High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm 201 OC


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    PDF ENN6662 2SB633P 2SD613P 2SB633P 2SD613P] O-220 IT02147 IT02149 SB633 si 13001 transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor

    BU208

    Abstract: BU208A BU207 transistor bu208 bu208b bu208 transistor
    Text: Ü& MOS PEC HORIZONTAL DEFLECTION TRAN SISTO R NPN .specifically designed for use in large screen color deflection circuits. BU207 BU208 BU208A FEATURES: * Collector-Emitter Sustaining Voltage V CEX = 1300 V Min. - BU207 = 1500 V (M in.)-BU208 * Glassivated Base-Coiiector Junction


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    PDF BU207 -BU208 BU207 BU208 BU208A Tj-100Â transistor bu208 bu208b bu208 transistor

    MP2144

    Abstract: MP2145 MP2143A 2G222 2N1029 2SB236 transistor 2SB235 2N1315 XC141 2N3132
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


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    PDF NPN110. 2N3633/52 ME8101 TIX895 1300M5A 1500MS 2500M5 2N2446 2N2379 3000MIA MP2144 MP2145 MP2143A 2G222 2N1029 2SB236 transistor 2SB235 2N1315 XC141 2N3132

    MP2143

    Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MP2143 MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235

    MP2143A

    Abstract: MP2144 XC141 MT63a MP2143 MP2144A MD16 2n2072 2sb235 BL1300
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. 1532t MP1532At MP1533t MP1534At MP2143A MP2144 XC141 MT63a MP2143 MP2144A MD16 2n2072 2sb235 BL1300

    2N1029

    Abstract: 2N2211 MP2145 mp2143 2SB237 2n1030 2N115 MP2143A MP2144 MP2144A
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    PDF NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 2N1029 2N2211 MP2145 mp2143 2SB237 2n1030 2N115 MP2143A MP2144 MP2144A