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    NPN 120V 10A TRANSISTOR Search Results

    NPN 120V 10A TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    NPN 120V 10A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 I+/I*=10 +25 ° C 0.3 B 0.3 0.2 0.1 0.1 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current


    Original     		PDF FMMT494 100mA 100ms 250mA, 500mA,

    nte328

    Abstract: 25A12
    Text: NTE328 Silicon NPN Transistor Power Amp, Switch Description: The NTE328 i a silicon NPN transistor in a TO3 type package designed for use in industrial power amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage


    Original     		PDF NTE328 NTE328 25A12

    FMMT494

    Abstract: DSA003696
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 I+/I*=10 +25 ° C B 0.3 0.3 0.2 0.1 0.1 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current


    Original     		PDF FMMT494 100mA 50age 100ms 250mA, FMMT494 DSA003696

    BDX67

    Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier


    Original     		PDF BDX66/A/B/C BDX67 BDX67C BDX67A BDX67B BDX67 npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66

    200W TRANSISTOR AUDIO AMPLIFIER

    Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
    Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms, BDX69" 200W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier

    Untitled

    Abstract: No abstract text available
    Text: 2N6578 MECHANICAL DATA Dimensions in mm inches NPN BIPOLAR POWER DARLINGTON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675)


    Original     		PDF 2N6578 O-204AA) 100mA

    tf600

    Abstract: IC4a ZTX1051A DSA003762
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am


    Original     		PDF ZTX1051A 100ms NY11725 tf600 IC4a ZTX1051A DSA003762

    120v 10a transistor

    Abstract: transistor darlington package to.3 npn 120v 10a transistor 2N6578
    Text: 2N6578 MECHANICAL DATA Dimensions in mm inches NPN BIPOLAR POWER DARLINGTON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675)


    Original     		PDF 2N6578 O-204AA) 100mA 120v 10a transistor transistor darlington package to.3 npn 120v 10a transistor 2N6578

    ZTX1053A

    Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am


    Original     		PDF ZTX1053A 100ms NY11725 ZTX1053A BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12

    t1053

    Abstract: ZDT1053 ic 245
    Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1053 ISSUE 1 - NOVEMBER 1995 ZDT1053 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T1053 ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZDT1053 OT223) T1053 100mA t1053 ZDT1053 ic 245

    NTE2344

    Abstract: nte2343 SILICON COMPLEMENTARY transistors darlington
    Text: NTE2343 NPN & NTE2344 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V


    Original     		PDF NTE2343 NTE2344 100mA, NTE2344 nte2343 SILICON COMPLEMENTARY transistors darlington

    2N6576

    Abstract: 2N6578 2N6577 darlington npn 90v
    Text: SavantIC Semiconductor Product Specification 2N6576 2N6577 2N6578 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Audio amplifiers ·Hammer drivers ·Series and shunt regulators


    Original     		PDF 2N6576 2N6577 2N6578 2N6576 2N6577 2N6578 darlington npn 90v

    2N6576

    Abstract: 2N6578 darlington npn 90v 2N6577
    Text: JMnic Product Specification 2N6576 2N6577 2N6578 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・DARLINGTON ・High DC current gain APPLICATIONS ・Power switching ・Audio amplifiers ・Hammer drivers ・Series and shunt regulators PINNING


    Original     		PDF 2N6576 2N6577 2N6578 2N6576 2N6577 2N6578 darlington npn 90v

    t1053

    Abstract: ZDT1053 DSA003723
    Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1053 ISSUE 2 - APRIL 2000 ZDT1053 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T1053 ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		PDF ZDT1053 OT223) T1053 100mA t1053 ZDT1053 DSA003723

    JANS2N2484

    Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
    Text: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930


    Original     		PDF JANS2N930 JANS2N930UB JANS2N2218 JANS2N2218A JANS2N2218AL JANS2N2219 JANS2N2219A JANS2N2219AL JANS2N2221A JANS2N2221AL JANS2N2484 JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373

    120v 10a transistor

    Abstract: No abstract text available
    Text: BDY90 MECHANICAL DATA NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 FEATURES 1.52 (0.06) 3.43 (0.135) 2 • • 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)


    Original     		PDF BDY90 O-204AA) 120v 10a transistor

    Untitled

    Abstract: No abstract text available
    Text: BDY90 MECHANICAL DATA NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 • • 22.23 (0.875) max. 1 FEATURES 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)


    Original     		PDF BDY90 O-204AA) 10MHz

    Complementary Darlington Audio Power Amplifier

    Abstract: audio Darlington 6A complementary npn-pnp power transistors darlington transistor for audio power application NTE2345 NTE2346 darlington complementary 120v
    Text: NTE2345 NPN & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT−82 type package designed for use in audio output stages and general amplifier and switching


    Original     		PDF NTE2345 NTE2346 OT-82 Complementary Darlington Audio Power Amplifier audio Darlington 6A complementary npn-pnp power transistors darlington transistor for audio power application NTE2345 NTE2346 darlington complementary 120v

    audio Darlington 6A

    Abstract: No abstract text available
    Text: NTE2345 NPN & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching


    Original     		PDF NTE2345 NTE2346 audio Darlington 6A

    120v 10a transistor

    Abstract: o25m 2N5291 npn 120v 10a transistor
    Text: SOLITRON DEVICES INC fib DE I fiBbfikDa D002S0b 5 | 'f'-jjELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PN P EPITAXIAL PLANAR POWER TRANSISTOR * FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 A Aluminum Collector: Polished Silicon


    OCR Scan     		PDF D002S0b 203mm) 25MHz 25MHz 350pF 120v 10a transistor o25m 2N5291 npn 120v 10a transistor

    2N3597

    Abstract: 2N3599 2N5539 BDY58 SDT8301 SDT8304 SDT8758 74c74 TRANSISTOR TO63
    Text: -Ælttron A T T Ä L ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc. NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 86 CHIP N UM BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 305mm) 2N3597 2N3599 2N5539 BDY58 SDT8301 SDT8304 SDT8758 74c74 TRANSISTOR TO63

    2N6127

    Abstract: Vceo 80V Ic 0.5A 2N5312 2N5318 2N5677 2N5742 2N5744 SDT3101 SDT3129
    Text: ^/outran ra y <gT ©Ä¥ÄIL®( Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 63) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)


    OCR Scan     		PDF 4i45mm 203mm) 2N6127 Vceo 80V Ic 0.5A 2N5312 2N5318 2N5677 2N5742 2N5744 SDT3101 SDT3129

    sdt31

    Abstract: No abstract text available
    Text: 8368602 SOL ITRON DEVICES INC 95D 02885 d ËT| û3kat,DE GDGEÛÛS 1 T- 3 „J&lttren Ä T O [L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER T~ t~( Devices, Inc. PNP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum


    OCR Scan     		PDF 203mm) 350pF 350pF 2N5312, 2N5318, 2N5677, 2N5744, 2N5742, 2N6127, SDT3101 sdt31

    Untitled

    Abstract: No abstract text available
    Text: PGäOEXyKgTT @ A ¥ Ä [ L Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available


    OCR Scan     		PDF 203mm) 20MHz 20MHz 500pF