Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN 1000V TRANSISTOR Search Results

    NPN 1000V TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN 1000V TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2311

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
    Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V


    Original     		PDF NTE2311 NTE2311 npn 1000V 15A NPN Transistor VCEO 1000V

    2SC2688

    Abstract: 2SC2688L NPN Transistor VCEO 1000V
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) O-126 2SC2688L 2SC2688-x-T60-A-K 2SC2688L-x-T60-A-K 2SC2688L NPN Transistor VCEO 1000V

    2SC2688

    Abstract: NPN Transistor VCEO 1000V TRANSISTOR 023
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR „ DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. „ FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) 2SC2688L-x-T60-K 2SC2688G-x-T60-K 2SC2688L-x-T6C-K 2SC2688G-x-T6C-K O-126 NPN Transistor VCEO 1000V TRANSISTOR 023

    NPN Transistor VCEO 1000V

    Abstract: 2SC2688 2SC2688L transistor T 023 XT60
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) O-126 2SC2688L 2SC2688-x-T60-K 2SC2688L-x-T60-K NPN Transistor VCEO 1000V 2SC2688L transistor T 023 XT60

    2SC2688

    Abstract: NPN Transistor VCEO 1000V 2SC2688L QW-R204-023 NPN SILICON TRANSISTOR
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR „ DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. „ FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) 2SC2688L-x-T60-K 2SC2688G-x-T60-K O-126 QW-R204-023 NPN Transistor VCEO 1000V 2SC2688L NPN SILICON TRANSISTOR

    2SC5264

    Abstract: 2SC5264LS 2079d
    Text: Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.


    Original     		PDF ENN5287A 2SC5264LS 2079D 2SC5264] O-220FI 2SC5264 2SC5264LS 2079d

    ta1238

    Abstract: TA-1238 2SC5304 2SC5304LS
    Text: Ordering number:ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.


    Original     		PDF ENN5883A 2SC5304LS 2079D 2SC5304] O-220FI ta1238 TA-1238 2SC5304 2SC5304LS

    ta1238

    Abstract: TA-1238 2SC5304 EN5883
    Text: Ordering number:EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm


    Original     		PDF EN5883 2SC5304 2079B 2SC5304] O-220FI ta1238 TA-1238 2SC5304 EN5883

    2069B

    Abstract: 2SC5420
    Text: Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm


    Original     		PDF EN5762 2SC5420 2069B 2SC5420] 2069B 2SC5420

    d 5287

    Abstract: 2SC5264
    Text: Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm


    Original     		PDF ENN5287 2SC5264 2079C 2SC5264] O-220FI-LS 10Ltd. d 5287 2SC5264

    2069B

    Abstract: 2SC5420
    Text: Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm


    Original     		PDF EN5762 2SC5420 2069B 2SC5420] 2069B 2SC5420

    NPN Transistor VCEO 1000V

    Abstract: 2SC5420 1000V 20A transistor
    Text: Ordering number : EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . • High reliability (Adoption of HVP process). • Adoption of MBIT process.


    Original     		PDF EN5762 2SC5420 2069B-SMP-FD 2SC5420] NPN Transistor VCEO 1000V 2SC5420 1000V 20A transistor

    Untitled

    Abstract: No abstract text available
    Text: ^Szmi-Conduetoi ^Products., {Inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJF18006 Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- 2 :V(BR)CBO=1000V(Min)


    Original     		PDF MJF18006 O-220F

    Untitled

    Abstract: No abstract text available
    Text: *L, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJE18008 Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- •>. ^ :V (B R)CBo= 1000V(Min) • High Switching Speed


    Original     		PDF MJE18008 O-220C

    Untitled

    Abstract: No abstract text available
    Text: , Una. LS TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJE18004 Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage: V(BR)CBO= 1000V(Min) • High Switching Speed PIN 1.BASE


    Original     		PDF MJE18004 O-220C

    Untitled

    Abstract: No abstract text available
    Text: , One. u TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 Silicon NPN Power Transistor MJF18004 DESCRIPTION • Collector-Base Breakdown Voltage:V(BR)CBO=1000V(Min) • High Switching Speed *W ! •?''••


    Original     		PDF MJF18004 O-220F

    2sc2688

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SC2688 NPN SILICON TRANSISTOR N PN SI LI CON T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SC2688 is designed for use in Color TV chroma output circuits. ̈ FEAT U RES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) 2SC2688L-x-T60-K 2SC2688G-x-T60-K 2SC2688L-x-T6C-K 2SC2688G-x-T6C-K O-126

    NPN Transistor VCEO 1000V

    Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
    Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:


    Original     		PDF NTE2310 NTE2310 100mA, NPN Transistor VCEO 1000V 1000v, NPN transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A

    NPN Transistor VCEO 1000V

    Abstract: NTE2327 250V transistor npn 2a transistor VCE 1000V
    Text: NTE2327 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters, inverters, switching regulators, motor control systems and switching applications. Absolute Maximum Ratings:


    Original     		PDF NTE2327 NTE2327 100mA, NPN Transistor VCEO 1000V 250V transistor npn 2a transistor VCE 1000V

    npn 1000V 15A

    Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in


    Original     		PDF MJW16010A npn 1000V 15A NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V

    2SC3060

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3060 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Ultra-fast switching ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic oscillators


    Original     		PDF 2SC3060 2SC3060

    TIC125

    Abstract: 2N6925A ic 921 transistor VCE 1000V 2N6678 2N6921A 2N6923A 2N6924A MJ16018 SFT6925A
    Text: *— t t u ' - -— SFT5925A NPN HIGH VOLTAGE HIGH SPEED POUJER TRANSISTOR 60 AMPS, 1000V 5TYLE CASE TO —3 WI TH JEDEC .060 PINS ► ► ► ► ► R A X SSDI 14849 F I R E S T O N E BLVD. LA MIRADA, CA. 9 0 6 3 8 FAX 213 9 2 1 - 9 6 6 0


    OCR Scan     		PDF SFT5925A 100KHz) 2N6678, 2N6921A, 2N6923A, 2N6924A, 2N6925A, MJ16018 60AMPS SFT6925A TIC125 2N6925A ic 921 transistor VCE 1000V 2N6678 2N6921A 2N6923A 2N6924A MJ16018

    BUX47A

    Abstract: BUX47 BUX47B BY205-400
    Text: T E X A S I N S T R -COPTO} Ô3&1726 T e x a s b5 instr DE | 0 T b l 7 5 b 003t.b41 fc, D 62C 36641 <o p t o > B U X 4 7, B U X 4 7A , BU X47B N-P-N SILICON POW ER TRANSISTORS 3 3 ' S 3 REVISED OCTOBER 1 9 8 4 125 W at 2 5 ° C Case Temperature 9 A Continuous Collector Current


    OCR Scan     		PDF 003bb41 BUX47, BUX47A, BUX47B BUX47 BUX47A BY205-400

    BUX47A

    Abstract: BUX47 BUX47B BY205-400 silicon power transistors T35 ET
    Text: TEXAS IN STR -COPTO} Ô 3Ô 1726 T EX A S TË IN S T R DE | 0 T b l 7 5 b 003t.b41 62C 3 6 6 4 1 <OPTO> BUX47, BUX47A, BUX47B N-P-N SILICON POWER TRANSISTORS 3 3 ' S 3 R E V IS E D O C TO B E R 1 9 8 4 125 W at 2 5 °C Case Temperature 9 A Continuous Collector Current


    OCR Scan     		PDF tbl75b BUX47, BUX47A, BUX47B bux47a 1ux47b BUX47 t-35-/s BUX47A BY205-400 silicon power transistors T35 ET