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    NPN 1000V Search Results

    NPN 1000V Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    NPN 1000V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2311

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
    Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V


    Original     		PDF NTE2311 NTE2311 npn 1000V 15A NPN Transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015S O205AD) 10/20Parameter 10/20m 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015 O205AD) 10/25mParameter 10/25m 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015 O205AD) 10/25m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5015X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015X O205AD) 10/20Parameter 10/20m 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015S O205AD) 10/20m 19-Jun-02

    2N5015S

    Abstract: No abstract text available
    Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015S O205AD) 10/20m 1-Aug-02 2N5015S

    Untitled

    Abstract: No abstract text available
    Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015SX O205AD) 10/2Parameter 10/20m 17-Jul-02

    2SC2688

    Abstract: 2SC2688L NPN Transistor VCEO 1000V
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) O-126 2SC2688L 2SC2688-x-T60-A-K 2SC2688L-x-T60-A-K 2SC2688L NPN Transistor VCEO 1000V

    2N5015SX

    Abstract: 1000v, NPN
    Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015SX O205AD) 10/20m 1-Aug-02 2N5015SX 1000v, NPN

    NPN Transistor VCEO 1000V

    Abstract: 2SC2688 2SC2688L transistor T 023 XT60
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) O-126 2SC2688L 2SC2688-x-T60-K 2SC2688L-x-T60-K NPN Transistor VCEO 1000V 2SC2688L transistor T 023 XT60

    2SC2688

    Abstract: NPN Transistor VCEO 1000V 2SC2688L QW-R204-023 NPN SILICON TRANSISTOR
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR „ DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. „ FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) 2SC2688L-x-T60-K 2SC2688G-x-T60-K O-126 QW-R204-023 NPN Transistor VCEO 1000V 2SC2688L NPN SILICON TRANSISTOR

    2N5015

    Abstract: No abstract text available
    Text: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015 O205AD) 10/25m 1-Aug-02 2N5015

    2N5015X

    Abstract: No abstract text available
    Text: 2N5015X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015X O205AD) 10/20m 1-Aug-02 2N5015X

    Untitled

    Abstract: No abstract text available
    Text: 2N5015X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015X O205AD) 10/20m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015SX O205AD) 10/20m 19-Jun-02

    NPN Transistor VCEO 1000V

    Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
    Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:


    Original     		PDF NTE2310 NTE2310 100mA, NPN Transistor VCEO 1000V 1000v, NPN transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A

    NPN Transistor VCEO 1000V

    Abstract: transistor VCE 1000V
    Text: NTE2313 Silicon NPN Transistor High Speed Switch Description: The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO220 type package designed for use in converters, inverters, switching regulators, motor control systems,


    Original     		PDF NTE2313 NTE2313 200mA 500mA, NPN Transistor VCEO 1000V transistor VCE 1000V

    transistor VCE 1000V

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a
    Text: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:


    Original     		PDF NTE2333 NTE2333 130mA, 650mA 600mA, transistor VCE 1000V npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a

    NPN Transistor VCEO 1000V

    Abstract: NTE2327 250V transistor npn 2a transistor VCE 1000V
    Text: NTE2327 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters, inverters, switching regulators, motor control systems and switching applications. Absolute Maximum Ratings:


    Original     		PDF NTE2327 NTE2327 100mA, NPN Transistor VCEO 1000V 250V transistor npn 2a transistor VCE 1000V

    NPN Transistor VCEO 1000V

    Abstract: transistor BUX81/9
    Text: BUX81 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR PostScript Picture C:\GRAPHICS\TO204AA EPS Applications The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and


    Original     		PDF BUX81 \GRAPHICS\TO204AA BUX81 204AA 100kHz NPN Transistor VCEO 1000V transistor BUX81/9

    Untitled

    Abstract: No abstract text available
    Text: J.E.IIZU C/ tj TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power


    Original     		PDF BUX85 BUX85 BUX84

    2SC5264

    Abstract: 2SC5264LS 2079d
    Text: Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.


    Original     		PDF ENN5287A 2SC5264LS 2079D 2SC5264] O-220FI 2SC5264 2SC5264LS 2079d

    F463 transistor

    Abstract: IF463 F463 SGSF463 H33-I3 SGSIF463-SGSF563 i f463 npn 1000V 100a SGS transistors F-463
    Text: 7 ^ 2 3 7 QPS^SQTg SGS-THOMSON iL iO T * ! SGSF463 SGSIF463-SGSF563 S G S - T H O M S ON 3QE ]> FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIGH SWITCHING SPEED NPN POWER TRANSISTORS . HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­


    OCR Scan     		PDF 02ci2Q? H33-I3 SGSF463 SGSIF463-SGSF563 70kHz ISOWATT218 500ms F463 transistor IF463 F463 SGSF463 H33-I3 SGSIF463-SGSF563 i f463 npn 1000V 100a SGS transistors F-463