NPN 1.5 AMPS POWER TRANSISTOR Search Results

NPN 1.5 AMPS POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

NPN 1.5 AMPS POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NSP5665 Abstract: sat 1205 Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *	Original	PDF	2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205
NPN 200 VOLTS 20 Amps POWER TRANSISTOR Abstract: NPN 1.5 AMPS POWER TRANSISTOR MJW-1302A Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A NPN 200 VOLTS 20 Amps POWER TRANSISTOR NPN 1.5 AMPS POWER TRANSISTOR MJW-1302A
MJW21196 Abstract: No abstract text available Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	PDF	MJW21195 MJW21196 MJW21195 MJW21196
MJL3281A Abstract: No abstract text available Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJL3281A MJL1302A MJL3281A MJL1302A
MJW2119x Abstract: No abstract text available Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	PDF	MJW21193 MJW21194 MJW21193 MJW21194 MJW2119x
NJW1302G Abstract: njw3281 NJW3281G Text: NJW3281G NPN NJW1302G (PNP) Preferred Devices Product Preview Complementary NPN-PNP Silicon Power Bipolar Transistors http://onsemi.com The NJW3281G and NJW1302G are PowerBase t power transistors for high power audio, disk head positioners and other linear	Original	PDF	NJW3281G NJW1302G NJW3281G NJW1302G NJW3281/D njw3281
MJW-1302A Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn MJW1302A MJW3281A Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A r14525 MJW3281A/D MJW-1302A NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn
Untitled Abstract: No abstract text available Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A MJW3281A/D
2N3773 NPN Audio Power AMP Transistor Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006 Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25	Original	PDF	OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
MJW21196 Abstract: MJW21195 npn 10000 JAPAN transistor Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	PDF	MJW21195 MJW21196 MJW21195 MJW21196 r14525 MJW21195/D npn 10000 JAPAN transistor
Untitled Abstract: No abstract text available Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A MJW3281A/D
MJW1302A Abstract: MJW3281A NPN 200 VOLTS 20 Amps POWER TRANSISTOR Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A r14525 MJW3281A/D NPN 200 VOLTS 20 Amps POWER TRANSISTOR
complementary npn-pnp power transistors Abstract: MJW1302A MJW1302AG MJW3281A MJW3281AG Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A O-247 MJW3281A/D complementary npn-pnp power transistors MJW1302AG MJW3281AG
MJW21195 Abstract: MJW21196 Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	PDF	MJW21195 MJW21196 MJW21195 MJW21196 r14525 MJW21195/D

MJW1302A Abstract: MJW1302AG MJW3281A MJW3281AG complementary npn-pnp power transistors TO-247 Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A O-247 MJW3281A/D MJW1302AG MJW3281AG complementary npn-pnp power transistors TO-247
Untitled Abstract: No abstract text available Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJL3281A MJL1302A MJL3281A MJL1302A MJL3281A/D
NPN 200 VOLTS 20 Amps POWER TRANSISTOR Abstract: mjl21195 Text: ON Semiconductort PNP MJL21195 * NPN MJL21196 * Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • • •	Original	PDF	MJL21195 MJL21196 MJL21195 MJL21196 NPN 200 VOLTS 20 Amps POWER TRANSISTOR
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
MJW21194 Abstract: MJW21193 Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	PDF	MJW21193 MJW21194 MJW21193 MJW21194 r14525 MJW21193/D
transistor MJL21194 Abstract: mjl21194 mjl21193 NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor mjl21193 Text: ON Semiconductort PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device	Original	PDF	MJL21193 MJL21194 MJL21193* MJL21194* MJL21194 transistor MJL21194 NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor mjl21193
MJW21194 Abstract: CIB-1000 TRANSISTOR npn MJW21193 MJW21193G MJW21194G Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	PDF	MJW21193 MJW21194 MJW21193 MJW21194 MJW21193/D CIB-1000 TRANSISTOR npn MJW21193G MJW21194G
Darlington npn stud mount Abstract: TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240 Text: POÜJEREX INC -=11 De J 7Hc14ti51i DGQlflS? 0 \| Power Transistors & Darlington Modules T '-3 3 -0 / NPN Power Switching Transistors le Amps y CEO (SUS) (Volts) tf(max) (¡¿sec) Pt(max) Watts Tc (°C) High Safe Operating Area (SOA) 25 40-240 175 1.5 5 25	OCR Scan	PDF	7Hc14ti51i MT-52 MT-33 Darlington npn stud mount TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240
692B Abstract: 694B ZTX690B Text: NPN Silicon Planar Medium Power High Gain Transistors ZTX689B ZTX690B ZTX692B ZTX694B PRELIMINARY INFORMATION FEATURES • • • • • • High gain — 500 min. Up to 3 am ps continuous current Gain specified up to 6 amps 1.5 w att pow er dissipation at	OCR Scan	PDF	ZTX689B ZTX690B ZTX692B ZTX694B 30CVs. 692B 694B
sn76544 Abstract: BUY71 BP 40 Datenblatt TIP 21 transistor TIP 35 transistor TRANSISTOR buy71 2N3440 Text: BUY71 NPN SILICON POWER TRANSISTOR D E S IG N E D FOR H IG H V O L T A G E C .R .T. S C A N N IN G • • V q e x Rating 2200 V Current Rating — 2 Amps Continuous • Fast Switching — tf at 1.5 Amps 0.7 Microsecond Typical @ 25 °C Case Temperature mechanical specification	OCR Scan	PDF	BUY71 sn76544 BUY71 BP 40 Datenblatt TIP 21 transistor TIP 35 transistor TRANSISTOR buy71 2N3440

NPN 1.5 AMPS POWER TRANSISTOR Search Results

NPN 1.5 AMPS POWER TRANSISTOR Result Highlights (5)

NPN 1.5 AMPS POWER TRANSISTOR Datasheets Context Search

NSP5665

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

MJW21196

MJL3281A

MJW2119x

NJW1302G

MJW-1302A

Untitled

2N3773 NPN Audio Power AMP Transistor

MJW21196

Untitled

MJW1302A

complementary npn-pnp power transistors

MJW21195

MJW1302A

Untitled

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

GT30F124

MJW21194

transistor MJL21194

MJW21194

Darlington npn stud mount

692B

sn76544