NP86N04DHE
Abstract: NP86N04EHE MP-25 NP86N04CHE
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP86N04CHE, NP86N04DHE, NP86N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP86N04CHE,
NP86N04DHE,
NP86N04EHE
O-220AB
O-262
NP86N04DHE
NP86N04CHE
O-263
NP86N04DHE
NP86N04EHE
MP-25
NP86N04CHE
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transistor di 960
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP86N04CHE, NP86N04DHE, NP86N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching
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NP86N04CHE,
NP86N04DHE,
NP86N04EHE
NP86N04CHE
NP86N04DHE
NP86N04EHE
O-220AB
O-262
O-263
O-220AB)
transistor di 960
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NP86N04MHE
Abstract: NP86N04NHE NP86N04CHE NP86N04DHE NP86N04EHE NP86N04EHE-E1-AY NP86N04EHE-E2-AY NP86N04KHE NP86N04KHE-E1-AY NP86N04KHE-E2-AY
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP86N04EHE, NP86N04KHE NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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NP86N04EHE,
NP86N04KHE
NP86N04CHE,
NP86N04DHE,
NP86N04MHE,
NP86N04NHE
NP86N04EHE-E1-AY
NP86N04EHE-E2-AY
NP86N04KHE-E2-AY
NP86N04KHE-E1-AY
NP86N04MHE
NP86N04NHE
NP86N04CHE
NP86N04DHE
NP86N04EHE
NP86N04EHE-E1-AY
NP86N04EHE-E2-AY
NP86N04KHE
NP86N04KHE-E1-AY
NP86N04KHE-E2-AY
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP86N04CHE, NP86N04DHE, NP86N04EHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
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NP86N04CHE,
NP86N04DHE,
NP86N04EHE
NP86N04CHE
NP86N04DHE
NP86N04EHE
O-220AB
O-262
O-263
O-220AB)
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transistor di 960
Abstract: MP-25 NP86N04CHE NP86N04DHE NP86N04EHE NP86N04KHE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP86N04CHE,NP86N04DHE,NP86N04EHE,NP86N04KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect PART NUMBER PACKAGE NP86N04CHE TO-220AB NP86N04DHE TO-262 NP86N04EHE
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NP86N04CHE
NP86N04DHE
NP86N04EHE
NP86N04KHE
NP86N04CHE
O-220AB
NP86N04DHE
O-262
NP86N04EHE
O-263
transistor di 960
MP-25
NP86N04KHE
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NP86N04MHE
Abstract: NP86N04CHE NP86N04DHE NP86N04EHE NP86N04EHE-E1-AY NP86N04EHE-E2-AY NP86N04KHE NP86N04KHE-E1-AY NP86N04KHE-E2-AY NP86N04NHE
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TO-252 MOSFET p channel
Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering
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NL-5612
S-18322
F-78142
E-28007
NP-S-NEWS109V30
TO-252 MOSFET p channel
NP80N03CLE
NP80N03DLE
NP80N03ELE
NP80N04CHE
NP80N04DHE
NP80N04EHE
NP84N04CHE
NP84N04DHE
NP84N04EHE
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TO-252 MOSFET p channel
Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive
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Q3/2001
NL-5612
S-18322
F-78142
E-28007
NP-S-NEWS071V50
TO-252 MOSFET p channel
nec 288
powermosfet Gate Drive
STR 1504
TO-262 MOSFET
NP80N03CLE
NP80N03DLE
NP80N04CHE
NP80N04DHE
NP84N04CHE
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