Untitled
Abstract: No abstract text available
Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns
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P4C148,
P4C149
P4C148
P4C149
096-bit
AM104
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BAT70
Abstract: BAT70-05
Text: BAT70. Silicon Schottky Diode Power rectifier diode Parallel connection for maximum I F per package Low forward voltage drop For power supply For clamping and protection BAT70-05 4 D 1 1 2 D 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT70.
BAT70-05
OT223
50/60Hz,
Nov-07-2002
100ms
BAT70
BAT70-05
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Untitled
Abstract: No abstract text available
Text: BB639C/BB659C. Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure
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BB639C/BB659C.
BB639C
BB659C/-02V
BB659C
BB659C-02V
OD323
SCD80
Nov-07-20cal
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SCD80
Abstract: CT 0.4-P
Text: BB535 /BB555. Silicon Tuning Diode For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure BB535 BB555/-02V 1 2 Type BB535 BB555 BB555-02V
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BB535
/BB555.
BB555/-02V
BB555
BB555-02V
OD323
SCD80
Nov-07-2002
CT 0.4-P
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b135
Abstract: b13502
Text: B13502GP N THRU B13506GP(N) Glass Passivated Auto Rectifier YENYO Voltage Range 200 to 600 V Current 35 Ampere Features ¬ Low forward voltage drop ¬ High current capability ¬ High reliability ¬ High surge current capability BLOCK .406(10.3) .382(9.7)
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B13502GP
B13506GP
UL94V-0
300uS
DAG23,
JAN-06
b135
b13502
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Untitled
Abstract: No abstract text available
Text: BB831. Silicon Variable Capacitance Diodes Frequency range up to 2 GHz Special design for use in TV-sat indoor unit BB831 1 2 Type BB831 Package SOD323 Configuration single LS nH Marking 1.8 white T Maximum Ratings at TA = 25°C, unless otherwise specified
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BB831.
BB831
OD323
Nov-07-2002
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VARIABLE CAPACITANCE DIODE
Abstract: BB439
Text: BB439. Silicon Variable Capacitance Diode For VHF tuned circuit applications High figure of merit BB439 1 2 Type BB439 Package SOD323 Configuration single LS nH Marking 1.8 white 2 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BB439.
BB439
OD323
Nov-07-2002
EHD07036
VARIABLE CAPACITANCE DIODE
BB439
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LED 850nm
Abstract: bidirectional LED transmitter 850nm optical led ST LED 850nm 60mA
Text: P/N: C-13/08-001-B-NSTL-01-XX 1310nm Emitting LED , 850nm Receiving (PIN), Bi-directional Diplexer Module 4 Features l 1310nm LED for transmitter side and 850nm PIN photodiode for receiver side l Uncool l Integrated package with low optical and electrical crosstalk
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C-13/08-001-B-NSTL-01-XX
1310nm
850nm
5/125m
DS1885
Nov0708-Rev
LED 850nm
bidirectional LED transmitter
850nm optical led ST
LED 850nm 60mA
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crystal 16MHZ
Abstract: AK8126
Text: ASAHI KASEI EMD CORPORATION Spread Spectrum Clock Generator AK8126 Description Features The AK8126 is a spread spectrum clock generator designed for Home AV applications where EMI elimination is seriously required. The device uses the AKEMD’s original spread spectrum profile* to
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AK8126
AK8126
10-pin
Nov-07
MS0548-E-01
crystal 16MHZ
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BB804
Abstract: No abstract text available
Text: BB804. Silicon Variable Capacitance Diode For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform "square law" characteristics Ideal HiFi tuning device when used in low-distortion, back-to-back configuration
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BB804.
BB804
Nov-07-2002
EHD07050
EHD07051
EHD07052
BB804
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BAT60B
Abstract: No abstract text available
Text: BAT60B. Silicon Schottky Diode High current rectifier Schottky diode with very low V F drop typ. 0.24 V at I F = 10mA For power supply applications For clamping and protection in low voltage applications For detection and step-up-conversion BAT60B
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BAT60B.
BAT60B
OD323
Nov-07-2002
BAT60B
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bb837
Abstract: BB857 SCD80 BB857 DIODE SCD80 C258
Text: BB837 /BB857. Silicon Tuning Diode For SAT -indoor-units High capacitance ratio Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure BB837 BB857 1 2 Type BB837 BB857 Package SOD323 SCD80 Configuration
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BB837
/BB857.
BB837
BB857
OD323
SCD80
Nov-07-2002
BB857
SCD80
BB857 DIODE SCD80
C258
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P4C148
Abstract: P4C149
Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns
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Original
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PDF
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P4C148,
P4C149
P4C148
P4C149
096-bit
SRAM104
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Untitled
Abstract: No abstract text available
Text: BB545 /BB565. Silicon Variable Capcitance Diode For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure BB545 BB565/-02V 1 2 Type BB545
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BB545
/BB565.
BB565/-02V
BB565
65-02V
OD323
SCD80
Nov-07-2002
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BB844
Abstract: No abstract text available
Text: BB844 Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band 77MHz to 108MHz Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning High tuning ratio at low supply voltage car radio
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BB844
77MHz
108MHz
15cal
BB844
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BB844
Abstract: No abstract text available
Text: BB844 Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band 77MHz to 108MHz Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning High tuning ratio at low supply voltage car radio
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BB844
77MHz
108MHz
15cal
BB844
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Untitled
Abstract: No abstract text available
Text: ASAHI KASEI EMD CORPORATION Spread Spectrum Clock Generator AK 8 1 2 6 Features Output Frequency Range: 16MHz – 128MHz Configurable Spread Spectrum Modulation: - AKEMD’s Original Spread Spectrum Profile - Modulation Ratio: Center Spread: ± 0 . 2 5 % , ± 0 . 5 % , ± 1 . 0 % , ± 1 .5 %
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16MHz
128MHz
46KHz
92KHz
32MHz
16MHz,
MS0548-E-01
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SCD80
Abstract: marking code INFINEON INFINEON marking marking code diode 04 BAR63-02V BB639C BB659C BB659C-02V marking code of 0 to Z DIODE Q marking
Text: BB639C/BB659C. Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure
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Original
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BB639C/BB659C.
BB639C
BB659C/-02V
BB659C
BB659C-02V
OD323
SCD80
SCD80
marking code INFINEON
INFINEON marking
marking code diode 04
BAR63-02V
BB639C
BB659C
BB659C-02V
marking code of 0 to Z
DIODE Q marking
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FL500
Abstract: LDTC0520 20 watt laser diode FL591 driver for 7 watt laser diode
Text: 500 mA laser diode driver or two 250 mA drivers in a small SMT package that is reflow oven compatible Pb Compliant FL500 RoHS GENERAL DESCRIPTION: The FL500 is ideal for driving low power laser diodes. It operates from 3 to 12 V, so is compatible with Li+ battery operation. It can be
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FL500
FL500
Nov-07
24-Feb-09
25-Sep-09
FL500-00400-A
LDTC0520
20 watt laser diode
FL591
driver for 7 watt laser diode
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13001b
Abstract: 13001 application notes w 13001 LED 850nm LED 1310nm fiber coupled LED 850nm
Text: P/N: C-08/13-001-B-NSTL-01-XX 850nm Emitting LED , 1310nm Receiving (PIN), Bi-directional Diplexer Module 4 Features l 850nm LED for transmitter side and 1310nm PIN photodiode for receiver side l Uncool l Integrated package with low optical and electrical crosstalk
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C-08/13-001-B-NSTL-01-XX
850nm
1310nm
5/125m
DS1884
Nov0708-Rev
13001b
13001 application notes
w 13001
LED 850nm
LED 1310nm
fiber coupled LED 850nm
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108MHz
Abstract: BB844
Text: BB844 Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band 77MHz to 108MHz Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning High tuning ratio at low supply voltage car radio
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PDF
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BB844
77MHz
108MHz
Nov-07-2002
108MHz
BB844
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Untitled
Abstract: No abstract text available
Text: Sch em atic: a a TX e o 7 o 2 o RX 3 0 1 o 10 o 1OOQpF T 11 O 2KV 12 o R1.R2.R3.R4: 75 ±1% OHMS E lectrical Specifications: @25“C Isolation Voltage: 1500 Vac Isolation Voltage: 500 Vac 1 + 2 + 4—3-1-7-I-6 UTP SIDE OCL: 350uH Min @100KHz 10OmV 8mADC
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350uH
100KHz
10OmV
300KHzâ
10GMHz)
100MHz-125MHz)
-12dB
300KHz
100MHz
60MHz
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Untitled
Abstract: No abstract text available
Text: 1. D im e n s io n s: 3. E le c t r i c a l S p e c i f i c a t i o n s : @25°C Pri/Sec Isolation: 1500 Vrms 1.10 Typ Insulation Resistance: 10,000 Mohms —1 O K} X CNI^ o v . ^ 0 03 4 -I o 00 CO _4_ ÎIÏÏÎÎÏÏÎ1 Leakage Inductance: 0.30uH Max @RCV SEC Shorted
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XF10B1Q7
414CT
150uH
100KHz
MIL-STD-202,
UL94V-0
E151556
10BASE-T
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Untitled
Abstract: No abstract text available
Text: TH I R D ANGLE PROJ . REV ISIONS - $> NOTES: I M A T E R I A L S OF C O N S T R U C T I O N : BODY - BRASS, GOLD PLATING C O N T A C T PIN - B E R Y L L I U M C O P P E R , G O L D P L A T I N G I N SULATO R - PTFE ELECTRICAL: A. I M P E D A N C E : 50 O H M
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OCR Scan
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-Nov-07
\SMA\SMA625IA
-078-3GT50G-50
SMA625IAI-078-3GT50G-50
I16251ACU02GA5F
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