Untitled
Abstract: No abstract text available
Text: na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-6960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Collector diode voltage VCI! . -SO volts (Y*;it — —1-5 volts) Emitter diode voltage YK1!0 .,.;.-[0 volts
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Untitled
Abstract: No abstract text available
Text: L-ConcLuctoi Lpi.oa.ucti., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 MRF607 The RF Line 1.75 W - 1 7 5 MHz RFPOWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier, or oscillator applications in military, mobile, marine and citizens band equipment.
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MRF607
1000pF
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OAOLP2
Abstract: temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645
Text: MCS@51 MICROCONTROLLER FAMILY USER’S MANUAL ORDER NO.: 272383-002 FEBRUARY 1994 Intel Corporation makes no warrsnfy for the uee of ite products and assumes no responsibility for any ewors which may appear in this document nor does it make a commitment to update the information contained herein.
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15consecutive
OAOLP2
temperature digital display JUMO Lan M
smd transistor 1p7
bti ml-2
transistor SMD 1p6
transistor DK qe smd
edto 116.4
8052ah basic
toba 639
270645
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M64026FP
Abstract: M64026 16P2N M64021FP 16P2N-A 64021FP
Text: MITSUBISHI COMMUNICATION 1C M64026FP PRELIMINARY NotkctThk is not a final «pocificuioo. Some parametric limó* a n S u b jta to ctunfs. BASE BAND 1C FOR CODELESS TELEPHONE DESCRIPTION The M64026FP is a voise scrambler integrated circuit designed to be used in wireless communications
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M64026FP
M64026FP
64021FP
16P2N--A
M64026
16P2N
M64021FP
16P2N-A
64021FP
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Untitled
Abstract: No abstract text available
Text: too proporiy notknphoncl too Mprara to bo Jorporatten bnprfar tr to o% kterraoMon k tok d i n nand d y tk right IN i dodurarat k of Ooiporallon k i oondBon H i k dko knd . otioto or to p a t fa r monutaotura o r M k tv m u m 3 tm tto o -otonot
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L77TWA7W2SMCSV4RRM6
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Untitled
Abstract: No abstract text available
Text: too proporiy notknphoncl too Mprara to bo Jorporatten bnprfar tr to o% kterraoMon k tok d i n nand d y tk right IN i dodurarat k of Ooiporallon k i oondBon H i k dko knd . otioto or to p a t fa r monutaotura o r M k tv m u m 3 tm tto o -otonot
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L77TWC13W6SMP2SVRM6
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Untitled
Abstract: No abstract text available
Text: APR 22 1991 PRELIMINARY Notk»:Tfcâ • Mt • fin i epebfeatiM.Sem* p f — rtc li«*» P t Sdama t» cha>gr % M 5 M 5 T. 27 2 7 8 P , MITSUBISHI LS I s J - l 5 , 2 0 , 2 5 2 6 2 1 4 4 - B I T 3 2 7 6 8 - W O R D BY 8 - B I T CMOS S T A T I C RAM DESCRIPTION
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H5N5278
32768-word
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Untitled
Abstract: No abstract text available
Text: 54ACT11874, 74ACT11874 DUAL 4-BIT D-TYPE EDGE-TRIGGERED FLIP-FLOPS WITH 3-STATE OUTPUTS D3447, MAR CH 1990-R E V IS E D O C TO BER 1990 54A C T 11 8 74 . . . J T P A C K A G E Inputs are TTL-Voltage C om patible 74A C T 11 8 74 . . . D W O R N T P A C K A G E
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54ACT11874,
74ACT11874
D3447,
1990-R
500-m
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Untitled
Abstract: No abstract text available
Text: 54ACT11191, 74ACT11191 SYNCHRONOUS 4-BIT UP/DOWN BINARY COUNTERS TI0146— D3455, MARCH 199« 54ACT11191 . . . J PACKAGE 74ACT11191 . . . D W O R N PACKAGE Inputs are TTL-Voltage Compatible Single Down/Up Count Control Line TOP VIEW Look-Ahead Circuitry Enhances Speed ot
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54ACT11191,
74ACT11191
TI0146--
D3455,
300-mil
54ACT11191
74ACT11191
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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S8090
Abstract: 494F D001h PC87410 PC87410VLK PC87911
Text: September 1994 PC87410 PCI-IDE Interface Controller General Description The PCI-IDE Interface Controller is designed to interface the IDE drive directly onto the PCI bus. It provides write posting and read pre-fetches, allowing the CPU to run concurrently
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PC87410
Cep-01451,
bSD1124
DD10013
S8090
494F
D001h
PC87410VLK
PC87911
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7391A
Abstract: IC ht 12 e
Text: ANALOG DEVICES + 3 V, Serial Input Micropower 10 - and 12-B it DACs □ AD7390/AD7391 FUNCTIONAL BLOCK DIAGRAM FEATURES M ic ro p o w e r: 100 jiA S in g le -S u p p ly +2.7 V to +5.5 V O p e ra tio n C o m p a c t 1.75 m m H e ig h t SO-8 Package A D 7390 /12 -B it R e s o lu tio n
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AD7390/AD7391
7390/A
12-bit
7391A
IC ht 12 e
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LS386A
Abstract: SCLS386A CO-AE
Text: SN54LV14A, SN74LV14A HEX SCHMITT-TRIGGER INVERTERS SCLS386A - SEPTEMBER 1997 - REVISED APRIL 1998 EPIC Enhanced-Performance Implanted CMOS Process Typical V q l p (Output Ground Bounce) < 0.8 V at Vcc, Ta = 25°C Typical Vqhv (Output Vqh Undershoot) > 2 V at Vcc, t A = 25°C
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SN54LV14A,
SN74LV14A
SCLS386A
JESD17
MIL-STD-883,
300-mil
SN54LV14A.
SN74LV14A
LS386A
CO-AE
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TL7700J
Abstract: No abstract text available
Text: LINEAR INTEGRATED CIRCUITS TYPES TL7700I, TL7700C SU PPLY VOLTAGE SUPERVISORS D 2 8 1 2, D E C E M B E R 1 9 8 3 • Power-On Reset Generator • Automatic Reset Generation After Voltage Drop • Wide Supply Voltage Range . . . 1.8 V to 40 V • Precision Voltage Sensor
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TL7700I,
TL7700C
TL7700J
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cj cl a17
Abstract: No abstract text available
Text: TMS29LF004T, TMS29LF004B 524288 BY 8-BIT FLASH MEMORIES Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization: 524288 x 8 Bits Array Blocking Architecture • • • • - • • • • • • • • • One 16K-Byte Protected-Boot Sector
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TMS29LF004T,
TMS29LF004B
SMJS850
16K-Byte
32K-Byte
64K-Byte
cj cl a17
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28 S F116 2 MEG x 8 FLASH MEMORY I^ IIC R O N 2 MEG x 8 5V/5V AND 3 V S m a r t V o l t a g e , SECTORED ERASE FEATURES • • • • • • • • • Thirty-two 64KB erase blocks Programmable sector lock Deep Power-Down Mode: 5p.A MAX 5V/5V operation (MT28F116 only):
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MT28F116
MT28SF116
100ns,
150ns
100ns
150ns
40LPIN
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TA8659N
Abstract: ta8659 ta8615n TA8659N-5 diode PJ 0416 TA8659N-44 TA8659N-3 TA 8659N PJ 0416 1v lg crt tv circuit diagram
Text: TOSHIBA I N T E G R A T E D CIRCUIT TECHNICAL DATA TA8659N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TENTATIVE M ULTI-COLOR V I D E O - C H R O M A - D E F L E C T I ON The TA8659N is an NTSC/PAL/SECAM videochroina-def 1ection sub-system with the
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TA8659N
TA8615N
TA8659N
TRF-5418)
TA8659N-63_
TA8659N-64
ta8659
TA8659N-5
diode PJ 0416
TA8659N-44
TA8659N-3
TA 8659N
PJ 0416 1v
lg crt tv circuit diagram
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC128K16/18E1 128K X 16/18 SYNCBURST SRAM MICRON +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES Fast access times: 8.5, 9 ,1 0 , 11 and 12ns Fast OH# access times: 5 and 6ns +3.3V + 0 .3 V /-0 .1 6 5 V p o w er supply (V cc
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MT58LC128K16/18E1
MT56LC126K
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Cherie
Abstract: t3d25
Text: |U 1IC =R O N DRAM k - _ Ä 2 56K X MT3D2569 9 DRAM MODULE 256K x 9 DRAM _ FAST PAGE MODE MT3D2569 LOW POWER, F EXTENDED V T F N n P D RF REFRESH (MT3D2569 L) M O D IW 1I^ FL — FEATURES MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 • Packages
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MT3D2569
30-pin
625mW
512-cycle
MT3D2569)
30DON
MT3D2568
T3D2569
Cherie
t3d25
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NCE100-S04
Abstract: NCE100-S04-1 NCE100-T01-1 NCE100 newport 15AT VDE0871 V0271
Text: Information the fo llo w in g New port C o m p o n e n ts data b o o k s are a ls o a v a ila b le □ A p p lica tio n N otes □ DC/DC C o n v e rte rs □ D elay L in e s □ Inductors □ Interface P ro d u c ts □ N etw ork P ro d u c ts □ T ra n sfo rm e rs
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NCE100
NCE100-S04
NCE100-S04-1
NCE100-T01-1
newport
15AT
VDE0871
V0271
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Untitled
Abstract: No abstract text available
Text: bM27S25 004203b ^70 A T A SHEET EC MOS INTEGRATED CIRCUIT /¿PD42S4190, 424190 4 M-BIT DYNAMIC RAM 256K-WORD BY 18-BIT, FAST PAGE MODE, BYTE WRITE MODE DESCRIPTION The //PD42S4190, 424190 are 262 144 w ords by 18 bits dynamic CMOS RAMs. The fast page m ode and byte
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bM27S25
004203b
PD42S4190,
256K-WORD
18-BIT,
//PD42S4190,
PD42S4190
44-pin
40-pin
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DPV27C256-200
Abstract: TVR 07 spec 27C256 32KX8 DPV27C256-250 30A011-00 Dense-Pac Microsystems 30a01100 30a011 00DD2
Text: DENSE-PAC MI CR OS Y S T E M S 07E D | 575^415 GDDD512 T J~ DPV27C256 32KX8 M O N O L IT H IC C M O S EP R O M DESCRIPTION: The DPV27C25&-200, -250 is a high-speed 32KX 8 UV eraseable and electrically programmable read only memo EPROM with CMOS technology. It is especially well suited for applica
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DPV27C256-200,
28-pin
32-pad
DPV27C256.
DPV27C256
DPV27C256-200M
200ns
DPV27C256-250M
250ns
125-C
DPV27C256-200
TVR 07 spec
27C256
32KX8
DPV27C256-250
30A011-00
Dense-Pac Microsystems
30a01100
30a011
00DD2
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Untitled
Abstract: No abstract text available
Text: 64K X24645 8192x8 Bit Advanced 2-Wire Serial E2PROM with Block Lock Protection FEATURES DESCRIPTION * 2.7V to 5.5V Power Supply * Low Power CMOS —Active Read Current Less Than 1mA —Active Write Current Less Than 3mA —Standby Current Less Than 1|±A
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X24645
8192x8
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GM71C18160AJ7
Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Text: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I
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GM71C1000B-60
GM71C
1OO0BJ-60
1000BZ-60
100OBL-6O
1000BLJ-60
GM71C1000BLZ-60
GM71C18160AJ7
GM71C4260AJ70
GM71C4400BJ60
GM71C4400BJ70
gm71c4100cj60
GM71C1000BJ70
GM76C256ALL-70
GM76C256BLLFW70
GM71C4100BJ70
GM76C88ALFW15
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