7404
Abstract: No abstract text available
Text: SK20MLI066 ?- M XQ Y$O 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT L$ZK ?[ M XQ Y$ @$ ?[ M P]Q Y$ @$_` *'-) VNN L GN C ?- M ]N Y$ X^ C ^N C a XN L ?[ M PQN Y$ V e- ?- M XQ Y$ GN C ?- M ]N Y$ X^ C ^N C ?[ M PQN Y$ fQ C ?- M XQ Y$
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SK20MLI066
7404
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Untitled
Abstract: No abstract text available
Text: SKiiP 23NAB126V10 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L;CS .; .;1X L/CS & Q GF R;O 4+8*&& 2'-* 79&* &@*,969*5 (& Q GF VNTW R; (Z Diode - Inverter, Chopper MiniSKiiP 2 (& Q GF VNTW R; .$ .$1X (Z
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23NAB126V10
23NAB126V10
27characteristic
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Untitled
Abstract: No abstract text available
Text: SOT223 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS on = 1.5Ω PARTMARKING DETAIL - ZVN4210 D S D G ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-So ur ce Vo l t ag e V DS 100 V
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OT223
ZVN4210G
ZVN4210
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Untitled
Abstract: No abstract text available
Text: SK30MLI066 ?- M XQ Y$O 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT L$ZK ?[ M XQ Y$ @$ ?[ M P]Q Y$ @$_` *'-) VNN L ^N C ?- M ]N Y$ GP C VN C a XN L ?[ M PQN Y$ V e- ?- M XQ Y$ G] C ?- M ]N Y$ GN C VN C ?[ M PQN Y$ PVN C ?- M XQ Y$
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SK30MLI066
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fireberd 6000 service manual
Abstract: diode lt 54 fireberd 6000 ei 33 u 68HC705C8 MC68HC705C8 68HC05 EIA-232 MC145480 MC145572
Text: MOTOROLA Order this document by MC145572EVK/D SEMICONDUCTOR TECHNICAL DATA Advance Information MC145572EVK ISDN U-Interface Transceiver Evaluation Kit This document contains information on a new product. SpeciÞcations and information herein are subject to change without notice.
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MC145572EVK/D
MC145572EVK
fireberd 6000 service manual
diode lt 54
fireberd 6000
ei 33 u
68HC705C8
MC68HC705C8
68HC05
EIA-232
MC145480
MC145572
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE ioa /sov FCQ10A03L 3.H.122 MAX FEATURES 10.31.4051 3 .4 I.1 3 4 U . . ^ / r ô ï â ) UIA o S im ila r to T 0-220A B C ase O F u lly M olded Iso la tio n o E x tre m e ly L ow F o rw a rd V o ltag e D rop o D u a l D iodes—C ath o d e C om m on
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FCQ10A03L
FCQ10A.
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SM 91A
Abstract: No abstract text available
Text: SPECIFICATION SILICON DIODE TYPE NAME : E RW O 4 - 0 6 0 SPEC. No. DATE : F u j i E l e c t r i c Co., Ltd. This Sp ecification is subject to change without notice. DATE NAME APPROVED DRAWN Fuji Electric Co^Lici. CHECKED 1/6 Y 0257-R-004a 22307^2 DDDSTbû 5T7
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0257-R-004a
C0W6C71QH
TD-Z20AC
20kHz
Duty50Ã
H04-004-Ã
D005175
ERWQ4-060
SM 91A
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MOC211
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC211 MOC212 M OC213 Sm all Outline O ptoisolators [CTR - 2 0 % Min] Transistor Output {CTR = 6 0 % Min] These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable,
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RS481A
E54915
MOC212
MOC213
MOC211
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : SILICON DIODE TYPE NAME : E RW O 5 - 0 6 0 . SPEC. No. DATE F u j i E l e c t r i c Co., Ltd, This S p e c ific a tio n is subject to change without notice. D ATE DRAWN, NAME APPROVED Fuji Electric CaJLid. CHECKED I 1/6 H04-004-07
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H04-004-07
U5i02
ERTO5-060
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d223 motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD223 Darlington Output [CTR > 500% Min] The MOCD223 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington
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MOCD223
MOCD223
d223 motorola
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MOC215
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC215 MOC216 MOC217 Small Outline Optoisolators [CTR e 20% Min] Transistor Output Low Input Current [CTR = 50% Min] These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable,
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RS481A
MOC215
0C216
MOC217
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Untitled
Abstract: No abstract text available
Text: MW PLP-20 I mean WEiin 20W Single Output LED Power Supply series 1Features: Universal AC input / Full range up to 277VAC Built-in constant current limiting circuit with adjustable OCP level Protections ¡Short circuit/Over load/Over voltage/Over temperature
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PLP-20
277VAC)
PLP-20-12
PLP-20-18
PLMO-24
PLP-20-36
PLP-20-48
2010-Q
18AWG
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO c a VDE UL CSA SETI BS ® SEMKO DEMKO N EM KO BABT MOC8080 [CTR » 500% Min] 6-Pin DIP Optoisolator High Tem perature Darlington Output STYLE 1 PLASTIC The MOC8O8O device consists ot a gallium arsenide infrared emitting diode optically
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MOC8080
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OPB 813
Abstract: No abstract text available
Text: ^ O TO RO LA SEMICONDUCTOR TECHNICAL DATA Order this document by OPB 86O/D Advance Information OPB86O OPB870 Slotted O ptical Sw itches Transistor Output These slotted switches each consist of a gallium arsenide infrared light emitting diode facing a silicon NPN phototransistor in a plastic housing. The devices are separated by a
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86O/D
OPB86O
OPB870
OPB860/D
OPB 813
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-In p u t NOR G ate M C74LVX02 W ith 5 V -T o lera n t Inputs The MC74LVX02 is an advanced high speed CMOS 2-input NOR gate. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems.
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MC74LVX02
300mA
C74LVX02
51A-03
MC74LVX02/D
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MC74LVX32
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-In p u t OR G ate M C74LVX32 W ith 5 V -T o lera n t Inputs The MC74LVX32 is an advanced high speed CMOS 2-input OR gate. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems.
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MC74LVX32
300mA
C74LVX32
14-LEAD
51A-03
MC74LVX32/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-In p u t AND G ate M C74LVX08 W ith 5 V -T o lera n t Inputs The MC74LVX08 is an advanced high speed CMOS 2-input AND gate. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems.
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MC74LVX08
300mA
C74LVX08
14-LEAD
51A-03
MC74LVX08/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M OC8080/D SEMICONDUCTOR TECHNICAL DATA & ® TO VDE UL CSA SETI SEMKO DEMKO NEMKO BABT MOC8O8O G lobalO ptoisolator 6 -P in DIP Optoisolator [C TR = 500% Min] Darlington Output M otorola Preferred Device T he MOC8O8O de vice con sists of a ga llium arse nide infrared em itting diode
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OC8080/D
MOC8080/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-In p u t NAND G ate M C74LVX00 W ith 5 V -T o lera n t Inputs The MC74LVX00 is an advanced high speed CMOS 2-input NAND gate. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems.
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MC74LVX00
300mA
C74LVX00
14-LEAD
51A-03
MC74LVX00/D
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DIODE JS4
Abstract: MB2841 MB2841BB 2q270
Text: NAPC/DHILIPS SEMICOND bSE ]> • OOfibbOh ST3 m $ I C 3 Philips Semlconductors Advanced BiCMOS Products Product spécification Dual10-bit bus interface latch 3-State MB2841 FEATURES • Output capability: +64mA/-32mA • High speed parallel latches • Latch-up protection exceeds 500mA per
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10-bit
MB2841
64mA/-32mA
500mA
MB2841
00fibbl5
DIODE JS4
MB2841BB
2q270
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MOCD217/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all O utline Optoisolators MOCD217 Transistor Output Low Input Current [C TR = 100% Min] The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a
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MOCD217/D
MOCD217
MOCD217
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Untitled
Abstract: No abstract text available
Text: MP87099 m CM OS Very Low Power 10-Bit, Analog-to-Digital Converter with 8-Channel Mux Micro Power Systems FEATURES BENEFITS • • • • • • • • • • • • • • • • • • 10-Bit Resolution Sampling Rates from <1 kHz to 1 MHz DNL better than 1/2 LSB typ up to 750 kHz
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MP87099
10-Bit,
10-Bit
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BECKMAN 332
Abstract: DDD7003 HP5082-2835 MP8799 MP8799AE
Text: MP8799 CMOS Very Low Power, 1 MSPS, 10-Bit Analog-to-Digital Converter with 8-Channel Mux BENEFITS FEATURES • • • • 10-Bit Resolution 8-Channel Mux Sampling Rates from <1 kHz to 1 MHz Very Low Power CMOS - 30 mW typ Power Down; Lower Consumption - 3 mW (typ)
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MP8799
10-Bit
MP87L99
3422blfl
3422bl6
BECKMAN 332
DDD7003
HP5082-2835
MP8799
MP8799AE
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UV diode
Abstract: No abstract text available
Text: Tbl» material and the Information htr«1n 1« lh« property of Fyjr SleclrEc Co.»Ud. Th«y shall bo n«llh«r reproducid, copiad, font, or dfscfosod In any way whatsoever for Ih« u*« of any third party tior u»ed lor lh« manufacturing purpose» without
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2SK2870-01L
6/13e
UV diode
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