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    NMOS PMOS ARRAY Search Results

    NMOS PMOS ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS3E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 3 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    NMOS PMOS ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ULN2803 driver

    Abstract: ULN2803 uln2804 equivalent ULN2804A
    Text: ULN2803 ULN2804 Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry such as TTL, CMOS or PMOS/NMOS and the higher current/voltage


    Original     		PDF ULN2803 ULN2804 ULN2804 ULN2803 driver uln2804 equivalent ULN2804A

    Untitled

    Abstract: No abstract text available
    Text: AMG-PI004 H-Bridge/Full Bridge Array of P and N channel MOSFETs 1. Functional Description of the AMG-PI004 The AMG-PI004 is built by utilizing one of the latest state-of-the-art trench technologies to achieve ultra low resistance RDS on for the power MOSFETs. The complementary H-bridge


    Original     		PDF AMG-PI004 AMG-PI004

    HX2000

    Abstract: HMX2000 nmos pmos array IC AND GATE TTL family honeywell SOI CMOS
    Text: MIXED SIGNAL SOI GATE ARRAYS HMX2000 FAMILY Features x x x x x x x x x x Fabricated on Honeywell’s RICMOSTM IV Silicon On Insulator SOI process - 0.8 Pm Process (Leff = .65 Pm) HMX2000 supports 5V operation TTL, CMOS, Cold Spare compatible I/O


    Original     		PDF HMX2000 HMX2000 HX2000 100ppm/Volt, nmos pmos array IC AND GATE TTL family honeywell SOI CMOS

    0.6 um cmos process

    Abstract: CMOS Process Family hv 082 1P2M pmos depletion nmos 0.13 um CMOS nmos pmos array trench mos HV diode
    Text: 0.6 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XT06 SOI CMOS with extended HV Technology Modular 0.6 µm Trench Isolated SOI CMOS process for analog/mixed-signal and high-voltage applications. Module Overview CORE CORE The process offers reduced parasitics which results in


    Original     		PDF

    0.6 um cmos process

    Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


    Original     		PDF

    spice model Tunnel diode

    Abstract: dpsN TUNNEL DIODE spice model
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


    Original     		PDF

    MOS RM3

    Abstract: No abstract text available
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		PDF XO035 XO035 35-micron MOS RM3

    MOS RM3

    Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		PDF XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"

    vertical pnp bjt

    Abstract: 1000 hz cmos Image Sensors CMOS Process Family XO035 1P3M X-Fab 18VERTICAL BSIM3v3.2 VTB photo diodes
    Text: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XO035 Modular CMOS Technology For Fast Optical Applications XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. Module Overview CORE MOS It is especially suited for applications needing


    Original     		PDF XO035 XO035 405nm 650nm vertical pnp bjt 1000 hz cmos Image Sensors CMOS Process Family 1P3M X-Fab 18VERTICAL BSIM3v3.2 VTB photo diodes

    nmos transistor 0.35 um

    Abstract: P854 "vlsi technology" abstract for intel gelato FEM95 20VOLTS his 06 P856
    Text: Intel’s 0.25 Micron, 2.0Volts Logic Process Technology A. Brand, A. Haranahalli, N. Hsieh, Y.C. Lin, G. Sery, N. Stenton, B.J. Woo California Technology and Manufacturing Group, Intel Corp. S Ahmed, M. Bohr, S. Thompson, S. Yang Portland Technology Development Group, Intel Corp.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TM September 2013 • What are Semiconductor Devices? • How Semiconductors are Made − Front-End Process − Back-End Process • Fabrication Facility and Equipment Issues • Business Aspects of Supplying Semiconductors TM 2 TM 4 A conductor carries electricity like a pipe


    Original     		PDF

    zener diode phc 24

    Abstract: 350v ZENER DIODE -20/zener diode phc 24
    Text: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Description Key Features XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


    Original     		PDF XDM10 XDM10 zener diode phc 24 350v ZENER DIODE -20/zener diode phc 24

    7166 cmos

    Abstract: ULN2803 ULN2804 IC ULN2803 driver ULN2803 ULN2802 OF ULN2803 ULN2803 driver on uln2803 ULN2804A
    Text: MOTOROLA ULN2803 ULN2804 Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry such as TTL, CMOS or PMOS/NMOS and the higher current/voltage


    OCR Scan     		PDF ULN2803 ULN2804 7166 cmos IC ULN2803 driver ULN2803 ULN2802 OF ULN2803 ULN2803 driver on uln2803 ULN2804A

    ULN2803

    Abstract: IC ULN2803 ULN2S03 LN2803 ULN2804 ULN2802 ULN2803 IC- CURRENT DRIVER 7166 cmos uln2804av ULN2804A
    Text: MOTOROLA — — — — O ctal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry such as TTL, CMOS or PMOS/NMOS and the higher current/voltage


    OCR Scan     		PDF ULN2803 ULN2804 ULN2804 ULN2803 IC ULN2803 ULN2S03 LN2803 ULN2802 ULN2803 IC- CURRENT DRIVER 7166 cmos uln2804av ULN2804A

    CMOS op-amp

    Abstract: No abstract text available
    Text: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 1 HIGH PERFORMANCE, HIGH RELIABILITY, CMOS ARRAY FAMILY


    OCR Scan     		PDF USI-6000 CMOS op-amp

    USI6000

    Abstract: MICRON RESISTOR Mos operational amplifier discrete schematic transistors cross reference list transistors cross reference nmos pmos array pMOS transistor transisTOR q106 cmos opamp photo transister
    Text: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 This Material Copyrighted By Its Respective Manufacturer


    OCR Scan     		PDF USI-6000 C31G33 USI6000 MICRON RESISTOR Mos operational amplifier discrete schematic transistors cross reference list transistors cross reference nmos pmos array pMOS transistor transisTOR q106 cmos opamp photo transister

    acumos

    Abstract: list of n channel fet A300 MF10 nmos pmos array n channel fet array
    Text: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double­ poly p-well process. The minimum gate channel


    OCR Scan     		PDF

    nmos pmos array

    Abstract: mf10 A300 list of n channel fet Acumos n channel fet array
    Text: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double­ poly p-well process. The minimum gate channel


    OCR Scan     		PDF

    WALMSLEY MICROSYSTEMS

    Abstract: STA10 "matched transistor" STA10 transistor is4128 CMOS spice model "magnetic tape"
    Text: ttjM a Walmsley BlHm §IH!EET M ICRO SYSTEM S LIM ITED STA10 MIXED ANALOGUE/DIGITAL CMOS ARRAY The STA10 is a sim ple mixed analogue/digital CMOS com ponent array ASIC specifically designed for very low cost applications. A single layer of m etal is used to interconnect the predefined com ponents in the array


    OCR Scan     		PDF STA10 STA10 WALMSLEY MICROSYSTEMS "matched transistor" STA10 transistor is4128 CMOS spice model "magnetic tape"

    mc1417p

    Abstract: mc1417p motorola ULN2801 darlington array nmos pmos array ULN2804A relay array driver ULN2801A ULN2802A ULN2803A
    Text: INTERFACE CIRCUITS continued Peripheral Interface (continued) Driver Arrays (continued) U L N 2 8 0 1 , 2 ,3 ,4 Octal Darlington Arrays — W ~ Œ IC = 500 mA V c e = 50 V Max T /\ ~ 0 tc + 70°C m -0 °— m 3E Œ m Œ Package: A Suffix — Case 726 m 1s


    OCR Scan     		PDF ULN2801 ULN2801A ULN2802A ULN2803A ULN2804A MC1417P mc1417p mc1417p motorola darlington array nmos pmos array relay array driver

    lc125A

    Abstract: ULN2074 ULN2067 ULN2064N ULN206 ULN2064 ULN2068 ULN2066 INTEGRATED POWER SEMICONDUCTORS LTD ic501
    Text: integrated power aa 4825898 r e | '4& e s & c\& ooooasfl 5 INTEGRATED POWER 82D 0 0 2 5 8 IMTB@§2MTED P O W E I? SEM IC O N D U C TO R S, LTD . 1.5 Amp Quad Darlington Arrays 7 ^ 4 3 - 2 - ^ Description Features These high-voltage, high-current darlington


    OCR Scan     		PDF 4fl25fl1fl 617-97M193 lc125A ULN2074 ULN2067 ULN2064N ULN206 ULN2064 ULN2068 ULN2066 INTEGRATED POWER SEMICONDUCTORS LTD ic501

    Untitled

    Abstract: No abstract text available
    Text: USI6000 SERIES ANALOG/DIGITAL CMOS SYSTEMS-ON-A-CHIP UNIVERSAL SEMICONDUCTOR THE CONCEPT MOS VLSI technology has ushered in an era of increased integration capability. The push is on to combine more and more circuitry, analog, as well as digital, onto a single integrated circuit. Prior


    OCR Scan     		PDF USI6000 samplP14 USI6006-10-P20 USI6006-14-P24 USI6006-15-P20 USI6006-24-P20 USI6006-25-P22 USI6006-26-C20 USI6006-27-C20 USI6006-28-P16

    USI6000

    Abstract: USI-6003 USI-6000 ANalog Devices Quad Opamp USI-6001 Universal Semiconductor transistors ON Semiconductor
    Text: UNIVERSAL SEMICONDUCTORS HE 0 I T3ba341 QOOOOS5 b | USI6000 SERIES ANALOG/DIGITAL CMOS SYSTEMS-ON-A-CHIP “T- 4 ;l- ‘ UNIVERSAL SEMICONDUCTOR THE CONCEPT MOS VLSI technology has ushered in an era of increased integration capability. The push is on to combine more and more circuitry, analog, as well as digital, onto a single integrated circuit. Prior


    OCR Scan     		PDF T3ba341 USI6000 USI6006-15-P20 USI6006-25-P22 USI6006-26-C20 USI6006-27-C20 USI6006-28-P16 USI6006-29-P16 USI6006-30-P40 US111/88) USI-6003 USI-6000 ANalog Devices Quad Opamp USI-6001 Universal Semiconductor transistors ON Semiconductor

    Untitled

    Abstract: No abstract text available
    Text: ° <CNi c,c, ytsoo ^jgh-Voltage, Digital/Linear Semicustom Array 005153 APPLICATIONS • • • • • • • • • "Smart” Power Control Display Drivers Test Systems Robotics Industrial Controls Level Shifting Appliances Automotive Telecommunications


    OCR Scan     		PDF LA500 50AL203140, DS87-152LBC-RD