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    Olimex ALUMINUM-HEATSINK-TO-220

    Heat Sinks 20 mm x15 mm x10 mm
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    Abracon Corporation AVR-1Z090610S70NKT

    Power Inductors - SMD IND 70 nH 84 A 0.10 mOhm
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    C&K BTNKT110390

    Switch Bezels / Switch Caps Tact
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    NKT 90 Datasheets Context Search

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    hsch 3486 zero bias schottky diode

    Abstract: "zero-bias schottky diode" HSCH-3486 S11 SCHOTTKY diode Microwave detector diodes Microwave detector diodes 18 GHz NKT 90 Zero Bias Small Detector Diodes 5963-0951E HSMS-2850
    Text: The Zero Bias Schottky Detector Diode Application Note 969 Introduction Table 1. Forward Voltage Characteristic Since all diodes in this discussion are Schottky diodes, the forward current obeys the equation: I = IS q e nkT ( (V–IRS -1 The ideality factor, n, is close to


    Original     		PDF HSMS-8101 HSMS-2850 HSCH-3486 5952-9823E. 5963-0951E hsch 3486 zero bias schottky diode "zero-bias schottky diode" HSCH-3486 S11 SCHOTTKY diode Microwave detector diodes Microwave detector diodes 18 GHz NKT 90 Zero Bias Small Detector Diodes 5963-0951E HSMS-2850

    hsch 3486 zero bias schottky diode

    Abstract: hsch-3486 HSMS-8101 hsms-2850
    Text: The Zero Bias Schottky Detector Diode Application Note 969 Introduction Table 1. Forward Voltage Characteristic Since all diodes in this discussion are Schottky diodes, the forward current obeys the equation: I = IS q ( (V–IRS nkT e -1 The ideality factor, n, is close to


    Original     		PDF HSMS-8101 HSMS-2850 HSCH-3486 5963-0951E hsch 3486 zero bias schottky diode

    SBAA083

    Abstract: SBAU070 ADS1240 ADS1241 ADS1241-EVM sbaa100
    Text: Application Report SBAA083 – February 2004 Accessing the Onboard Temperature Diode in the ADS1240 and ADS1241 Sean Chuang and Jason Bridgmon ABSTRACT The ADS1240 and ADS1241 are precision, wide dynamic range, delta-sigma Analog-to-Digital Converters ADCs with 24-bit resolution. These products offer a wide variety of features, including


    Original     		PDF SBAA083 ADS1240 ADS1241 ADS1241 24-bit SBAA083 SBAU070 ADS1241-EVM sbaa100

    BVT-Z

    Abstract: aruz
    Text: LJ=6 LVaZVb k@VRcdaVb jORaZ_db R^U bZ]`\V Z^`dc b`VTZWZTRcZ_^ lxqvtQ+.-p uqy>.l/\XIVREP >:muOdn l87s800m/\XIVREP GSRXEGXn jORaZ_db Wd^TcZ_^ l8YX +.4 JYRGXMSR l;SJX ;XEVX JYRGXMSRm/\GITX JSV 87s800 GSRXVSP X]TIn l8YX HMWTPE] JYRGXMSR lytszt2^ EYXSQEXMG GSRZIVXMRK JYRGXMSR


    Original     		PDF l87s800m/\XIVREP 87s800 l87s800 BVT-Z aruz

    hsch 3486 zero bias schottky diode

    Abstract: HSMS-2850 HSCH-3486 HSMS-8101 5963-0951E hsms-10-5
    Text: FORWARD CURRENT HSCH-3486 The Zero Bias Schottky Detector Diode 1 Application Note 969 0.1 0.01 Introduction 0.1 A conventional Schottky diode detector such as the Avago Technologies HSMS-8101 requires no bias for high level input power — above one milliwatt. However,


    Original     		PDF HSCH-3486 HSMS-8101 5952-9823E 5963-0951E hsch 3486 zero bias schottky diode HSMS-2850 HSCH-3486 hsms-10-5

    triac mw 131 600d

    Abstract: 65n06
    Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717


    Original     		PDF

    PE58292

    Abstract: DE57982EN
    Text: Medium Voltage Distribution Catalogue I 2014 RM6 up to 24 kV Gas Insulated Ring Main Unit Make the most of your energy SM Gas Insulated Switchgear GIS Ring Main Unit up to 24 kV Contents RM6 up to 24 kV Contents Presentation A-1 The RM6 range B-1 Unit characteristics


    Original     		PDF ART93643 CS30323 AMTED398032EN PE58292 DE57982EN

    temperature sensor interface with 8051

    Abstract: sbaa100 coding for temperature sensor interface with 8051 circuit diagram temperature measurement rtd YSI 55031 MSC1210-DAQ-EVM 8051 coding for temperature measurement ADS1218 RTD 1055 ADS1218 application notes
    Text: Application Report SBAA100 - July 2003 Using the MSC121x as a High-Precision Intelligent Temperature Sensor Hugo Cheung Data Acquisition Products − Microsystems ABSTRACT The MSC121x [1] is an embedded controller with a high-precision, high-stability temperature


    Original     		PDF SBAA100 MSC121x MSC121x 24-bit temperature sensor interface with 8051 coding for temperature sensor interface with 8051 circuit diagram temperature measurement rtd YSI 55031 MSC1210-DAQ-EVM 8051 coding for temperature measurement ADS1218 RTD 1055 ADS1218 application notes

    HMPS-2822

    Abstract: HSMS-282x Rf level detector Design Seminar ratio Detector HMPS-2820 DIODE RF DETECTOR HSMS High frequency detector diode Agilent Technologies RF APPLICATION OF Resistance Temperature Detector
    Text: A Temperature Compensated Linear Power Detector Application Note 1328 Introduction In many RF applications where an output power level from a source varies across frequency bands and time, it is critical that these variations are either kept to their minimum or allowed to occur in a controlled manner.


    Original     		PDF HMPS-2822 HMPS-2820 AV01-0344EN AV02-0033EN HMPS-2822 HSMS-282x Rf level detector Design Seminar ratio Detector HMPS-2820 DIODE RF DETECTOR HSMS High frequency detector diode Agilent Technologies RF APPLICATION OF Resistance Temperature Detector

    rf detector diode low power

    Abstract: K band detector diode APPLICATION OF Resistance Temperature Detector HSMS High frequency detector diode 47K variable resistor capacitor 47k HMPS-2820 HMPS-2825 HSMS-2825 Rf level detector
    Text: A Temperature Compensated Linear Power Detector Application Note 1328 Introduction In many RF applications where an output power level from a source varies across frequency bands and time, it is critical that these variations are either kept to their minimum or allowed to occur in a


    Original     		PDF HMPS-2820 5988-8437EN rf detector diode low power K band detector diode APPLICATION OF Resistance Temperature Detector HSMS High frequency detector diode 47K variable resistor capacitor 47k HMPS-2820 HMPS-2825 HSMS-2825 Rf level detector

    DIODE 0.7v

    Abstract: Diode Equivalent BAT62 BAT62-L704 schottky diode cross reference AN185 pn junction diode ideality factor SCHOTTKY DIODES CROSS REFERENCE ADS2008 BAT62 BAT62-07L4
    Text: Low Barrier Schottky Diode BAT62 RF Power Detection A pplication Note AN185 Revision: V1.0 Date: 21-12-2009 RF and Protection Devices Edition 21-12-2009 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BAT62 AN185 AN185, BAT62: DIODE 0.7v Diode Equivalent BAT62 BAT62-L704 schottky diode cross reference AN185 pn junction diode ideality factor SCHOTTKY DIODES CROSS REFERENCE ADS2008 BAT62 BAT62-07L4

    PNP 2n3906 331

    Abstract: 2n3906 equivalent transistor 2N4148 2n3906 331 transistor kt 925 NPn 2n3906 331 capacitor 476 10k 935 ltc3880 LTspice npn equivalent of 2n3906 transistor
    Text: Application Note 137 May 2012 Accurate Temperature Sensing with an External P-N Junction Michael Jones Introduction Temperature Sensing Theory Many Linear Technology devices use an external PNP transistor to sense temperature. Common examples are LTC3880, LTC3883 and LTC2974. Accurate temperature


    Original     		PDF LTC3880, LTC3883 LTC2974. an137f AN137-12 PNP 2n3906 331 2n3906 equivalent transistor 2N4148 2n3906 331 transistor kt 925 NPn 2n3906 331 capacitor 476 10k 935 ltc3880 LTspice npn equivalent of 2n3906 transistor

    NPN transistor 2n3904 beta value

    Abstract: 2N3904 2N3906 ADM1021 ADM1023 ADM1023ARQ RQ-16
    Text: ACPI-Compliant High-Accuracy Microprocessor System Temperature Monitor ADM1023* a FEATURES Next Generation Upgrade to ADM1021 On-Chip and Remote Temperature Sensing Offset Registers for System Calibration 1؇C Accuracy and Resolution on Local Channel 0.125؇C Resolution/1؇C Accuracy on Remote Channel


    Original     		PDF ADM1023* ADM1021 16-Lead ADM1023 10MIL NPN transistor 2n3904 beta value 2N3904 2N3906 ADM1021 ADM1023 ADM1023ARQ RQ-16

    kt420

    Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
    Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS


    OCR Scan     		PDF

    germanium transistors PNP

    Abstract: transistor t05 2n404 mw 137 NKT11 NKT139 2N1303 2N 1309 NKT135 2n 1305
    Text: PNP Germanium Transistors PIMP Germanium RF A lloy Transistors in T 0 1 and T 0 5 metal cases Characteristics at T amb=25°. M axim um ratings Type Case B VCEO V Bvcso bvebo V V XCM mA mW JJM °C hF E ^ C E / i C V /m A ) pt o t ' h/rf ^ C E ^ Ó (V /m A I


    OCR Scan     		PDF NKT139 germanium transistors PNP transistor t05 2n404 mw 137 NKT11 NKT139 2N1303 2N 1309 NKT135 2n 1305

    Newmarket Transistors

    Abstract: NKT Semiconductors Newmarket nkt NKT216 2N1305 NKT213 2N1309 germanium transistors NPN ACY21 OC72
    Text: N ew m arket Sem iconductors Germanium A lloy Transistors P N P Germanium A llo y Transistors REFERENCE T A B LE Maximum ratings. C haracteristics at T 4 = 25°C. Code ACY ACY ACY ACY ACY ACY ACY ACY 17 18 19 20 21 22 39 40 BVC eo BVcao BV ebo IcM V V V A


    OCR Scan     		PDF 27714R 27716E 27717C 7718A 27719X 27710F 15627E 15628C 5629A 15631B Newmarket Transistors NKT Semiconductors Newmarket nkt NKT216 2N1305 NKT213 2N1309 germanium transistors NPN ACY21 OC72

    nkt 110/12

    Abstract: ACY39 NKT221 germanium transistors PNP NKT 90 ACY20 ma902 ACY41 026 pnp
    Text: PNP Germanium Transistors PN P Germanium A F A llo y Transistors in T 0 5 metal case fr <vce~ 6V-'c 1 m A Com m on Characteristics Type A C Y 18 19 20 21 22 39 A C Y 40 A C Y 41 A C Y 44 NKT221 N K T 222 N K T 223 N K T 224 N K T 225 N K T 226* N K T 227


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    NKT275

    Abstract: OC75 OC81DN OC72 OC78 NKT213 germanium transistors PNP oc75 oc76 ACY35 nkt 275
    Text: PNP Germanium Transistors PNP Germanium A F Alloy Transistors in T 0 1 metal case Common Characteristics fr Vc£ Cob <VC B = 6 V , \E = 0 •6 V , lc = 1mA) 1 MHz Characteristics at T amb = 2 5 °C Maximum ratings Type Low Noise Types 40 pF B V C fO V B V CSO


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    D4148

    Abstract: OA91 OA91 DIODES oa47 diode in4007 IN 4004 diodes OA47 OA79 IN 4007 OA90 diode
    Text: Diodes and Rectifiers M in ia tu re D iod es in glass package M ax im u m ratings Case D 03 D3 O A 91 O A 90 O A 47 O A 79 IN 4148 D 59 D542 D 4148 C o n s tru c tio n y RM V Pt. C o n ta c t Ge Pt. C o n ta c t Ge G o ld B onded Ge Pt. C o n ta ct Ge Si_ D iffused_


    OCR Scan     		PDF D4148 D36/50 D36/100 D36/200 D36/400 D36/600 D36/800 D36/1000 OA91 OA91 DIODES oa47 diode in4007 IN 4004 diodes OA47 OA79 IN 4007 OA90 diode

    diode fr 107

    Abstract: fr 107 diode nkt ceramic
    Text: Texas Instruments TGD0600 Series GaAs Schottky-Barrier Mixer Diodes Features • Broadband performance from VHF to 100 GHz ■ Less than 7-dB conversion loss from 32 to 90 GHz ■ Rugged, Symmetrical, Hermetic Package Description The Texas Instruments TGD0600 Series


    OCR Scan     		PDF TGD0600 MIL-STD-202, packaD0624 TGD0683 TGD0653, diode fr 107 fr 107 diode nkt ceramic

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    Untitled

    Abstract: No abstract text available
    Text: ï ï 6 ì 5 4 NIC HT VER HASSTE KANTEN SIND N I C H T M A ß S T Ä B L IC H IN m LO Ï 3 ÄNDERUNGEN NISCHEN BEHALTEN DIE DEM FORTSCHRITT WIR UNS VERTRAULI CH TECH­ DIENEN, VOR UNVERÖ FFENTLICHTE ZEICHNUNG. ALLE V O R B E H A L T E N . V E R V I E L F Ä L T I G U N G UND


    OCR Scan     		PDF AMP-EN-556 eq005386

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    2 TZ 11

    Abstract: TZ 10a PR 8501 6 TZ 70 MIKRO tz049 2 TZ 05 ScansUX66 temperaturregler VDE 0660 - 107
    Text: M. K. JUCHHEIM GmbH & Co Postadresse: Hausadresse: Moltkestraße 13-31 36035 Fulda, Germany 36039 Fulda, Germany Telefon 0661 60 03-716 Telefax (0 6 6 0 )6 0 0 3 -5 04 Telex 49 701 ju f d email JUMO de@e-mail.com (5 D MESS- UND REGELTECHNIK Seite 1 /3 MICROSTAT-M


    OCR Scan     		PDF 72x72 96x96 93fiiiox 8501-21-60-TZ 8501-21-80-TZ 8501-21-10-TZ 2 TZ 11 TZ 10a PR 8501 6 TZ 70 MIKRO tz049 2 TZ 05 ScansUX66 temperaturregler VDE 0660 - 107