Untitled
Abstract: No abstract text available
Text: ShE D INTER F E T CORP • 4fl2bfiflö ODOOSS4 7 ■ D12 *T -2 .9 -a 7 NJ28D Process SILICON JUNCTION FIELD-EFFECT TRANSISTOR • Monolithic Dual Construction • Low Noise, High Gain Amplifier Absolute Maximum Ratings Gate Current, Ig 10mA Operating Junction Temperature, Tj
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NJ28D
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NJ28D
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 13 D • 0 S D M 33 Ô G D 037 SR 7 ■ ALGR T-91-01 P R O C E S S NJ28D Process NJ28D Dual N-Channel Junction Field-Effect Transistor P rocess N J28D is a monolithic dual N-channel junction field-effect transistor. It is similar to Process
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T-91-01
NJ28D
NJ35D,
NJ28D
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NJ32
Abstract: THJ5486 THJ5459 THJ5484 THJ5485 THJ55456 THJ55466 THJ55476
Text: ALL E GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC T3 » • D50433Ô SE M IC O N D S/IC S D D G 3 S 6 1 3 ■ ALÛR 93D 0 3 5 8 1 3 > 7"-2 ?*2.S JUNCTION FIELD-EFFECT TRANSISTO R CH IPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh
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D5D433fi
DQQ3S61
THJ5459
THJ5484
THJ5485
THJ6449
THJ5450
THJ6451
NJ132L
THJ6452
NJ32
THJ5486
THJ55456
THJ55466
THJ55476
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. *13 D • QSG433Ô a D G 3 b ì T 7 ~ Ì m ^ S E M IC O N D S / I C S 930 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at Tfl = 25°C lo ss
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QSG433Ã
03616J)
NJ35D
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/S EM IC ON D GROUP 851 4019 SPRAGUE, ^ D • S E M I C O N D S / ICS 93D 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at TA = 25°C loss V gS[oH) Igss V BHJGSS Device Type 2N3954
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03616J)
2N3954
2N3955
2N3956
2N3957
2N5045
2N5046
2N5047
2N5196
2N5197
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