mb 8739
Abstract: 196939-01 cRIO-901x NI 9979 cRIO-910x GB-64 NI 9978 196938-01 779563-01 crio
Text: CompactRIO High-Performance Real-Time Controllers NI cRIO-9012, NI cRIO-9014 NEW! • Small and rugged embedded real-time controllers • Execution target for NI LabVIEW Real-Time applications • Reliable and deterministic operation for stand-alone control, monitoring,
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cRIO-9012,
cRIO-9014
MPC5200
cRIO-9012
cRIO-9014
10/100BaseT/TX
RS232
51489A-01*
51489A-01
2007-8739-161-101-D
mb 8739
196939-01
cRIO-901x
NI 9979
cRIO-910x
GB-64
NI 9978
196938-01
779563-01
crio
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CMS-S050-040
Abstract: No abstract text available
Text: CMS-S050-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.270 * 1.270 mm Bond Pad size(B) : 1.143 *1.143 mm Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag Metalization :
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CMS-S050-040
CMS-S050-040
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CMS-S035-040
Abstract: No abstract text available
Text: CMS-S035-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 0.889 * 0.889 mm 2 Bond Pad size(B) : 0.762 * 0.762 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S035-040
CMS-S035-040
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CMS-S072-060
Abstract: NI 9979
Text: CMS-S072-060 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.830* 1.830 mm 2 Bond Pad size(B) : 1.702 *1.702 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S072-060
CMS-S072-060
NI 9979
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CMS-S072-040
Abstract: No abstract text available
Text: CMS-S072-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.830* 1.830 mm 2 Bond Pad size(B) : 1.702 *1.702 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S072-040
CMS-S072-040
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9909
Abstract: CMS-S040-040L
Text: CMS-S040-040L SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S040-040L
9909
CMS-S040-040L
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CMS-S087-040
Abstract: No abstract text available
Text: CMS-S087-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 2.210* 2.210 mm 2 Bond Pad size(B) : 2.083 *2.083 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S087-040
CMS-S087-040
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CMS-S060-040
Abstract: No abstract text available
Text: CMS-S060-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.524* 1.524 mm 2 Bond Pad size(B) : 1.422 *1.422 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S060-040
CMS-S060-040
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422-1 ir
Abstract: CMS-S060-060
Text: CMS-S060-060 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.524* 1.524 mm 2 Bond Pad size(B) : 1.422 *1.422 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S060-060
422-1 ir
CMS-S060-060
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CMS-S032-020
Abstract: No abstract text available
Text: CMS-S032-020 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 0.814 * 0.814 mm 2 Bond Pad size(B) : 0.686 * 0.686 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S032-020
CMS-S032-020
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CMS-S040-020
Abstract: No abstract text available
Text: CMS-S040-020 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S040-020
CMS-S040-020
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CMS-S087-060
Abstract: No abstract text available
Text: CMS-S087-060 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 2.210* 2.210 mm 2 Bond Pad size(B) : 2.083 *2.083 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S087-060
CMS-S087-060
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CMS-S040-040
Abstract: No abstract text available
Text: CMS-S040-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S040-040
CMS-S040-040
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CMS-S032-040
Abstract: No abstract text available
Text: CMS-S032-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 0.814 * 0.814 mm 2 Bond Pad size(B) : 0.686 * 0.686 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S032-040
CMS-S032-040
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D3512
Abstract: No abstract text available
Text: SAW Bandpass Filter 202163C 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D3512 2.5±0.2 25.4±0.2 7.6±0.2
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202163C
D3512
04A001
NI2023-CS03
D3512
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Untitled
Abstract: No abstract text available
Text: SAW Bandpass Filter 203654B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2512 Pin Configuration
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203654B
D2512
04A001
NM3024-CS02
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8821
Abstract: D3512
Text: SAW Bandpass Filter 202195B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D3512 2.5±0.2 25.4±0.2 7.6±0.2
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202195B
D3512
04A001
20MHz
NW3008-CS02
8821
D3512
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8239
Abstract: D3512
Text: SAW Bandpass Filter 251915B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 2.5±0.2 Package : D3512 Pin Configuration Dimensions shown are nominal in millimeters
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251915B
07A001
D3512
NM7045-CS01
8239
D3512
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CDR03 receiver module
Abstract: CDR03 receiver 9926 mosfet Optoelectronics Device data Zener diode smd marking code 621 "Piezoelectric Sensor" sun chemical un 1210 array resistor 9926 ceramic disc 104 aec capacitors Zener diode smd marking code w1
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book surface mount MUltilayer Ceramic chip capacitors vishay vse-db0097-0805 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0097-0805
CDR03 receiver module
CDR03 receiver
9926 mosfet
Optoelectronics Device data
Zener diode smd marking code 621
"Piezoelectric Sensor"
sun chemical un 1210
array resistor 9926
ceramic disc 104 aec capacitors
Zener diode smd marking code w1
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1825 - 0148
Abstract: 10189
Text: Philips Components 10189 Document No. 8 5 3 -0 6 8 5 ECN No. 99799 Date of Issue June 14, 1990 Status Product Specification Inverter Hex Inverter with Enable ECL Products FEATURES • Typical propagation delay: 2.0ns ORDERING INFORMATION • Typical supply current —I Ee : 30mA
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16-AX.
1825 - 0148
10189
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Untitled
Abstract: No abstract text available
Text: Philips Components Document No. 853-0644 ECN No. 99799 Date of Issue June 14, 1990 Status Product Specification 10108 Gate Dual 4-Input AND/NAND Gate ECL Products FEATURES • Typical propagation delay: 2.3ns for AND output, 2.8ns for NAND output • Typical supply current —lEE : 28mA
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16-Pin
10108N
10108F
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Untitled
Abstract: No abstract text available
Text: Philips Components 10135 Document No. 8 5 3 -0 6 6 4 EC N No. 99799 Date of Issue June 14, 1990 Flip-Flop Status Product Specification Dual J-K Master-Slave Flip-Flop ECL Products FEATURES • Typical propagation delay: 3.0ns • Typical supply current -lEE : 54mA
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16-Pin
10135N
10135F
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10125N
Abstract: 10125F 10125DC 10125-F 10125d
Text: Philips Components 10125 D ocum ent No. 8 5 3 -0 6 5 8 EC N No. 99799 D ate of Issue J u n e 14, 1990 Gate S tatus Product Specification Quad ECL-to-TTL Translator E C L Products FEATURES ORDERING INFORMATION • Typical propagation delay: 3.5ns • Typical supply current
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16-Pin
10125N
10125F
10125D
F129S3S
800mVp-p
500ns
10125DC
10125-F
10125d
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kn59-158
Abstract: CP403 KTH-2003 KN-59-158 M39012 KN-59-245 KN-59-132 KN-59-244 KN-59-201 M39012/01-0504
Text: hrtp: w uA v.kingscloctronics com n j> lu g s i html N P lu gs \ N Plugs K-GRIP, JR. CONSTRUCTION D IM EN SIO N S K IN G S PARTE N U M B E R TR-# FINISH M ILIT A R Y NUMBER Silver Only KN-5S-118 in mm 0 78 19b CABLE I CRIM P TRIM I DIE CODE 415 K TH -2001
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KN-5S-118
M39012/01-0504
M39012/01-0503
KN-59-132
KN-59-201
KN-5S-104
M39012/01-0501
N-59-197
M39012/01-0502
jKTH-2042
kn59-158
CP403
KTH-2003
KN-59-158
M39012
KN-59-245
KN-59-244
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