2n3721
Abstract: No abstract text available
Text: TELEPHONE: 973 379-2922 (212)227-6005 FAX: (973) 3794960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA Silicon Transistor 2N3721 2N3721 is a NPN silicon transistor intended for general purpose applications. The planar passivated construction assures excellent device
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2N3721
2N3721
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WYLEX
Abstract: carlo gavazzi SP 115 230
Text: domestic commercial industrial circuit protection Founded in 1897, Wylex introduced the first ‘consumer unit’ to the electrical industry, this original design was the forerunner to the ‘Standard Range’, which is still in wide use today across the world.
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WY2074a
WYLEX
carlo gavazzi SP 115 230
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Untitled
Abstract: No abstract text available
Text: 520 SURJUDPPH 5HJLVWUHGHV LQVWUXFWLRQV 'pFRGHXU G LQVWUXFWLRQ $GUHVVH $GUHVVHDEVROXH 3LSHOLQH &RPSWHXUGH SURJUDPPH LFKLHU &RQVWDQWH 5HJLVWUHGH WUDYDLO: +RUORJH %XVGHGRQQpHV $/8 $ % 2&±) 3DJH $GUHVVDJH LQGLUHFW
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NHIIHFWXHXQ28LQFOXVLIHQWUHXQHFRQVWDQWHHW:
HIIHFWXHXQ28HQWUH
IIHFWXHXQHURWDWLRQGHELWVjJDXFKHjWUDYHUV67
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HIIHFWXHXQ28H
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mccb 60947-2 max zs
Abstract: MCB ENERGY LET THROUGH HRC fuse gg GEC mcb tripping curves mcb technical detail b112c NSB310-C 80A mccb curve 400a mccb Wylex 604
Text: Circuit Protection 2003 Founded in 1897, Wylex introduced the first ‘consumer unit’ to the electrical industry, this original design was the forerunner to the ‘Standard Range’, which is still in wide use today. From its base at Wythenshawe, through
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MIL-T-10727
Abstract: No abstract text available
Text: Ti nHiIS ORAWING rS A CONTROLLED DOCUMENT FOP AHP INCORPORATED. IS SU BJECT TO CHANGE AND THE CONTROLLING ENOINEERIN0 AN /74TJO N SHOULD BE CONTACTED FOR THE LATEST REVISION. 0 & DRAWING MADE IN THIRD ANOCE PROJECTION u3T m r R EVISIO N S 14 LT R 0C 3C R JP T I0 N
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09-C2
00254C
MIL-T-10727
L2S0-3001
C-322252
AMP26463
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U 1 S C 4901
Abstract: No abstract text available
Text: ADE-203-225 Z Rev. 0 Mar.31,1994 Product Preview HM67B1864 Series (Target Spec.) 64K x 18 B its Synchronous Fast Static RAM With B urst C ounter and Self-Timed Write P ack age Outline D escrip tion TheHM67B1864 is a 1,179,648 bit density high performance synchronous static random access memory
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HM67B1864
TheHM67B1864
18bit.
1194/DDR/MFM
M12T080
U 1 S C 4901
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON D »iILi 'irM D E Ì M28F220 2 Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12V± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS
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M28F220
x8/x16,
0020h
00E6h
TSOP48
M28F220
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moy SMD
Abstract: 0L02M 208H
Text: 1. Mechanical Dimensions: r u3 x°i 2. S ch em atic: SEC PRI \ 1 O- 4 O- -O 2 c 0 .2 3 0 3. E lectrical Sp ecification s: 25°C E 3N I-+ XFMRS 3 XF0256 YYWW • G 2 t1 0C L: 2 5 u H ± 3 0 % — | |— 0.030 0.100 D D- t xt X D D S 2 D O CD o no IN hO
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3XF0256
10KHz
500Vrms
50Vdc
MIL-STD-202G,
UL94V-D
E151556
-t-125
l02mm)
XF0256â
moy SMD
0L02M
208H
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BUX37
Abstract: transistor da 307 dg173 TO-204AA transistor
Text: G E SOLI» STATE DI 3875081 G E “SOLID STATE _ File N um b er ' ’ D eT| 3û750fll 00173DS 4 '01E 17305 D T * 3 ^"2.^ Darlington Power Transistor# 1243 BUX37 15-Ampere N-P-N Monolithic Darlington Power Transistor « TERMINAL DESIGNATIONS 400 V , 35 W
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DG173DS
BUX37
15-Ampere
O-204AA
RCA-BUX37
O-204AA
50fll
DD17307
BUX37
transistor da 307
dg173
TO-204AA transistor
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mb8851a
Abstract: MB84049 mb8851 MB88511 MB8855A MB8843 MB8851H-PSH MB8851-PSH 038006 MB8840
Text: TM335-A871: January 1987 CMOS SINGLE-CHIP 4-BIT MICROCOMPUTER MB8851M The Fujitsu MB8850 series CMOS single-chip 4-bit microcomputer family is a CMOS version of the con ventional MB8840 series. Its architecture and in struction set are almost same as the MB8840 series.
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MB8850
MB8840
MB8851,
FPT-48P-M02)
F4fl002S-6C
MB8850U1/U2-C:
42-PIN
mb8851a
MB84049
mb8851
MB88511
MB8855A
MB8843
MB8851H-PSH
MB8851-PSH
038006
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c5as
Abstract: CXK1012P ML0100
Text: 1 0 2 4 - bit 12 8 w o rd x 8 b it Non-volatile Memory D e s c r i p t i on Package Outline Unit: mm The CXK1012P is an e le c tr ic a lly erasable and programmable E2PROM of 128wordx 8 b i t s tr u c tu r e .lt enpfoyg fflrY O lfltile IflCTy tra n s is to rs of the MNOS type. For the
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CXK1012P
128wordx8bit
CXK1012P
128wordx
12sec
CXK1012P,
73sec
c5as
ML0100
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pa2023
Abstract: 37RGB561 pe811 RGB561 37rgb PC40 PC47 DE07 Q002 PC24-27 PP16-23
Text: RGB561 ARCHITECTURE IBM M icroelectronics Introduction The RGB561 is designed to m eet the la rg e spectrum o f graphics o p e ra tio n s o f high end w o rksta tio n s in the X W indows environm ent. It p rovides a high level o f functional inte g ra tio n w ith fle x ib ility , to achieve a v a rie ty o f co lor modes,
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RGB561
RGB561
pa2023
37RGB561
pe811
37rgb
PC40 PC47
DE07
Q002
PC24-27
PP16-23
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MB1422
Abstract: MB1422A
Text: F U JIT S U DYNAMIC RAM CONTROLLER LSI MB 1422A Ju n e 1 9 8 6 E d itio n 1.0 DYNAMIC RAM CONTROLLER The F u jits u MB 1 4 2 2 A is a high perform ance D R A M c o n tro lle r LSI. The M B 1 4 2 2 A c o n tro ls address m u ltip le x in g , refresh tim in g and th e ir a rb itra
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IP-42P
P-42P-M
44-LEAD
LCC-44P-M01)
MB1422
MB1422A
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YD 1270
Abstract: yl 1050 tetrode yl 1060 QQE 03 32 YD 1336 philips oszillator yd1336 yd 7377 Valvo valvo transistoren
Text: Elektronik. Wir bauen die Elemente. Vaniti \ Ö Senderöhren für Nachrichtensender 1983 Datenbuch Elektronik. Wir bauen die Elemente. Unser Arbeitsgebiet - besonders die Mi kroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen.
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RCA-CA3052
Abstract: TAA550 ul1202 Analogschaltkreise der Volksrepublik Polen ITT transistoren Scans-048 UL1321 Dii 1501 itk 120-2 UL1111
Text: H orst Schm ied Analogschaltkreise der Volksrepublik Polen ln der V olksrepublik Polen ist dir- V ereinigung U nitru OEM ! A lleinhersteller von H albleiterbauelem enten. tofertigt werden neben einem großen T ypenspektrum an diskreten H albleitern 112 T ypen digitaler
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Z80 INTERFACING TECHNIQUES
Abstract: Z80 RAM TC514100
Text: * This is advanced information and specifications 4,194,304 WORD ;• 1 BIT DYNAMIC RAM are subject to change without notice. DESCRIPTION The TC514100J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514100J/Z
TC514100J/Z.
TC5141
Z80 INTERFACING TECHNIQUES
Z80 RAM
TC514100
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Untitled
Abstract: No abstract text available
Text: International 4055452 D015bS2 307 e Rectifier • INR PD-9.524D IRFR110 IRFU110 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR110 Straight Lead (IRFU110) Available in Tape & Reel Fast Switching Ease of Paralleling
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D015bS2
IRFR110
IRFU110
IRFR110)
IRFU110)
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tc9137p
Abstract: tc9137 TD6301P td6301 tc9137ap EJC-TC9137A lg 32 lcd t-con tc 9137p 7ap2 LM 301P
Text: T C 9 1 3 7 A P INTEGRAT CIRCUIT DIGITAI. INTEGRATED CIRCUIT SIR ]COK M O R ORITH1C T E C H N IC A L D A T A C2-M0S LSI FOR S T A T I C T Y P E D Î T I TAL T U N i K G SY! Unit; in mm TC9 137P is a RSI for Rii digital tuning sys tern vi th F1.L circuit
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TC9137P
c7ap-33
19S0-J2-12
EJC-TC9137AP-34
ejc-tc9137a
tc9137
TD6301P
td6301
tc9137ap
lg 32 lcd t-con
tc 9137p
7ap2
LM 301P
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V54C365404VB HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 16M X 4 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 4 PRELIMINARY 7 75 8P C 8 S y s te m F re q u e n c y fCK 143 M H z 133 M H z 125 M H z 125 M H z C lo c k C y c le T im e (tcK 3 ) 7 ns
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V54C365404VB
54-Pin
V54C365404VB
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YD 1270
Abstract: TB 2920 hq H7204A QQE 03 32 Valvo UAA3000 chn 743 yl 1110 YD 1050 YD 1304
Text: Elektronik. Wir bauen die Elemente. Vaniti \ Ö Senderöhren für Nachrichtensender 1983 Datenbuch Elektronik. Wir bauen die Elemente. Unser Arbeitsgebiet - besonders die Mi kroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen.
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mc6821
Abstract: hall marking code A04 68B50 MCM6830A motorola application note 6809 6844 MADT 68A09 mcm6830 68A21 MC6854
Text: m icrocom puter com ponents M otorola reserves the right to make changes to any products herein to improve re lia b ility, fu n ctio n or design. M otorola does not assume any lia b ility arising o u t o f the application or use o f any product or c irc u it described herein; neither does it convey any license under its patent rights nor the rights of
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K-2800
mc6821
hall marking code A04
68B50
MCM6830A
motorola application note 6809 6844
MADT
68A09
mcm6830
68A21
MC6854
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2N1051
Abstract: 2w105 2w1051 D 1414 transistor
Text: M IL -S-19-.00/216A NAVY 28 April 1969 SUPERSED IN G M IL -S-19500/216(NAVY) 9 N o v e m b e r 1 *3 1 M ILIT A R Y SPEC IFIC A TIO N SEMICONDUCTOR D EV IC E. TRANSISTOR, NPN, SILIC G n T Y PE 2N1051 « AAAflB 1* o w v n 1.1 Scope. This specification covers the detail requirem ents lo r silicon,
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-19100/216A
2N1051
MIL-STD-750
MDL-S-19500,
MIL-8-19500
5961-H179J
2N1051
2w105
2w1051
D 1414 transistor
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GFSH624
Abstract: No abstract text available
Text: ASK 20230 SHEET 01 OF 01 POSITRONIC ASIA PTE. LTD. BELIEVES THE DATA ON THE DRAWING TO BE RELIABLE. SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIC ASIA PTE. LTD. ASSUMES NO
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11Dec03
PA-ECO-03054
PA-ECO-04024
GFSH624F3H
Dec03
GFSH624
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5055 _ CMO _ LC382161T-17 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x
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EN5055
LC382161T-17
LC382161
65536-word
16-bit
50-pin
D015317
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