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    NGTB35N60FL2WG Price and Stock

    Flip Electronics NGTB35N60FL2WG

    IGBT TRENCH/FS 600V 70A TO247
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    onsemi NGTB35N60FL2WG

    IGBT TRENCH/FS 600V 70A TO247
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    Flip Electronics NGTB35N60FL2WG 90
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    onsemi NGTB35N60FL2WG.

    Dc Collector Current:70A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:300W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Msl:- Rohs Compliant: Yes |Onsemi NGTB35N60FL2WG.
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    onsemi NGTB35N60FL2WG (ALTERNATE: 8427894)

    NGTB35N60FL2WG, IGBT Transistor, 70 A 600 V, 1MHz, 3-Pin TO-247 | ON Semiconductor NGTB35N60FL2WG
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    RS NGTB35N60FL2WG (ALTERNATE: 8427894) Bulk 2
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    NGTB35N60FL2WG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NGTB35N60FL2WG ON Semiconductor Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 70A 300W TO247 Original PDF

    NGTB35N60FL2WG Datasheets Context Search

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    Abstract: No abstract text available
    Text: NGTB35N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    PDF NGTB35N60FL2WG NGTB35N60FL2W/D