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    Rochester Electronics LLC NGTB30N60SWG

    IGBT TRENCH FS 600V 60A TO247-3
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    DigiKey NGTB30N60SWG Tube 1,873 127
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    onsemi NGTB30N60SWG

    IGBT 600V 60A 189W TO247
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    Avnet Americas NGTB30N60SWG Tube 4 Weeks 153
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    Rochester Electronics NGTB30N60SWG 1,873 1
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    NGTB30N60SWG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTB30N60SWG ON Semiconductor Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 60A 189W TO247 Original PDF

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    30N60S

    Abstract: No abstract text available
    Text: NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB30N60SWG NGTB30N60SW/D 30N60S